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1.发明授权Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes 有权用于制造半极性（Al，In，Ga，B）N型发光二极管的方法公开(公告)号：US08299452B2
公开(公告)日：2012-10-30
申请号：US13405590
申请日：2012-02-27
申请人： Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L29/06
摘要： A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
摘要翻译： 公开了具有560-580nm范围内的峰值发射波长的黄色发光二极管（LED）。 LED在一个或多个III族氮化物基半极平面上生长，并且LED的有源层由包含单量子阱或多量子阱结构的铟（In）组成。 LED量子阱的厚度范围为2-7nm。 还公开了由至少一个半极性黄色LED组成的多色LED或白色LED。
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2.发明申请METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES 有权制备半导体（Al，In，Ga，B）N基发光二极管的方法公开(公告)号：US20120205620A1
公开(公告)日：2012-08-16
申请号：US13405590
申请日：2012-02-27
申请人： Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
摘要： A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
摘要翻译： 公开了具有560-580nm范围内的峰值发射波长的黄色发光二极管（LED）。 LED在一个或多个III族氮化物基半极平面上生长，并且LED的有源层由包含单量子阱或多量子阱结构的铟（In）组成。 LED量子阱的厚度范围为2-7nm。 还公开了由至少一个半极性黄色LED组成的多色LED或白色LED。
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公开(公告)号：US08148713B2
公开(公告)日：2012-04-03
申请号：US12419119
申请日：2009-04-06
申请人： Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L29/06
CPC分类号： H01L33/32 , H01L21/0254 , H01L21/02579 , H01L21/02609 , H01L21/0262 , H01L33/02 , H01L33/08 , Y10S977/755
摘要： A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
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4.发明申请METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES 有权制备半导体（Al，In，Ga，B）N基发光二极管的方法公开(公告)号：US20090250686A1
公开(公告)日：2009-10-08
申请号：US12419119
申请日：2009-04-06
申请人： Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
CPC分类号： H01L33/32 , H01L21/0254 , H01L21/02579 , H01L21/02609 , H01L21/0262 , H01L33/02 , H01L33/08 , Y10S977/755
摘要： A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
摘要翻译： 公开了具有560-580nm范围内的峰值发射波长的黄色发光二极管（LED）。 LED在一个或多个III族氮化物基半极平面上生长，并且LED的有源层由包含单量子阱或多量子阱结构的铟（In）组成。 LED量子阱的厚度范围为2-7nm。 还公开了由至少一个半极性黄色LED组成的多色LED或白色LED。
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5.发明申请公开(公告)号：US20100308357A1
公开(公告)日：2010-12-09
申请号：US12740481
申请日：2008-10-29
申请人： Hideyoshi Horie , Hirohiko Hirasawa
发明人： Hideyoshi Horie , Hirohiko Hirasawa
摘要： A light-emitting element (10) is provided with a thin-film crystal layer which includes a buffer layer (22), a first-conductivity-type semiconductor layer, an active structure (25) and a second-conductivity-type semiconductor layer. In the thin-film crystal layer, at least a part of the second-conductivity-type semiconductor layer is covered with an insulating film. The insulating film has a crystal quality improving layer (30) for recovering crystallinity of the thin-film crystal layer.
摘要翻译： 发光元件（10）设置有薄膜晶体层，该薄膜晶体层包括缓冲层（22），第一导电型半导体层，有源结构（25）和第二导电型半导体层 。 在薄膜晶体层中，第二导电型半导体层的至少一部分被绝缘膜覆盖。 绝缘膜具有用于回收薄膜晶体层的结晶性的晶体质量改善层（30）。
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