公开(公告)号：US20100059182A1

公开(公告)日：2010-03-11

申请号：US12550391

申请日：2009-08-30

申请人： Ho Chul LEE ,  Sun Hong Choi ,  Seung Ho Lee ,  Ji Hun Lee ,  Dong Kyu Lee ,  Tae Wan Lee

发明人： Ho Chul LEE ,  Sun Hong Choi ,  Seung Ho Lee ,  Ji Hun Lee ,  Dong Kyu Lee ,  Tae Wan Lee

IPC分类号： H01L21/465 ,  H05B6/10

CPC分类号： C23C16/46 ,  H01L21/67109

摘要： A substrate processing apparatus includes a chamber having a reaction space therein, a substrate seating member disposed in the reaction space of the chamber to seat a substrate thereon, an induction heating unit to heat the substrate seating member, and at least one altitude adjusting unit to selectively adjust the altitude of the induction heating unit at the outside of the chamber according to a temperature adjusting region of the substrate seating member. Therefore, it is possible to constantly control a temperature of the substrate seating member by adjusting the distance length between the substrate seating member and the induction heating unit at the outside of the chamber.

摘要翻译： 一种基板处理装置，包括：反应空间的室，设置在所述室的反应空间中以将基板安置在其上的基板安置部件;加热所述基板座部件的感应加热单元;以及至少一个高度调节单元， 根据基板座部件的温度调节区域选择性地调节室外的感应加热单元的高度。 因此，可以通过调节在室外的基板座构件和感应加热单元之间的距离长度来恒定地控制基板座部件的温度。

公开(公告)号：US20140131856A1

公开(公告)日：2014-05-15

申请号：US13726917

申请日：2012-12-26

申请人： Won Chul Do ,  Doo Hyun Park ,  Jong Sik Paek ,  Ji Hun Lee ,  Seong Min Seo

发明人： Won Chul Do ,  Doo Hyun Park ,  Jong Sik Paek ,  Ji Hun Lee ,  Seong Min Seo

IPC分类号： H01L21/56 ,  H01L23/498

CPC分类号： H01L21/4846 ,  H01L21/481 ,  H01L21/4853 ,  H01L21/56 ,  H01L21/561 ,  H01L21/563 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/04 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3675 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5384 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0655 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/814 ,  H01L2224/81801 ,  H01L2224/83005 ,  H01L2224/92125 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/16251 ,  H01L2924/1816 ,  H01L2924/18161 ,  H01L2924/19105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014

摘要： Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer.

摘要翻译： 提供一种半导体器件及其制造方法，该半导体器件具有不具有通过硅通孔的相对较薄厚度的中介层。 制造半导体器件的方法包括在虚设衬底上形成包括再分配层和电介质层的插入件，将半导体管芯连接到面向插入件上部的再分配层，通过使用封装，去除 所述虚拟衬底从所述插入器连接，并且将凸块连接到面向所述插入件的下部的再分配层。

公开(公告)号：US09000586B2

公开(公告)日：2015-04-07

申请号：US13726917

申请日：2012-12-26

申请人： Won Chul Do ,  Doo Hyun Park ,  Jong Sik Paek ,  Ji Hun Lee ,  Seong Min Seo

发明人： Won Chul Do ,  Doo Hyun Park ,  Jong Sik Paek ,  Ji Hun Lee ,  Seong Min Seo

IPC分类号： H01L21/56 ,  H01L23/498 ,  H01L23/367 ,  H01L21/48 ,  H01L23/538 ,  H01L21/683

CPC分类号： H01L21/4846 ,  H01L21/481 ,  H01L21/4853 ,  H01L21/56 ,  H01L21/561 ,  H01L21/563 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/04 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3675 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5384 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0655 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/814 ,  H01L2224/81801 ,  H01L2224/83005 ,  H01L2224/92125 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/16251 ,  H01L2924/1816 ,  H01L2924/18161 ,  H01L2924/19105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014

摘要： Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer.

摘要翻译： 提供一种半导体器件及其制造方法，该半导体器件具有不具有通过硅通孔的相对较薄厚度的中介层。 制造半导体器件的方法包括在虚设衬底上形成包括再分配层和电介质层的插入件，将半导体管芯连接到面向插入件上部的再分配层，通过使用封装，去除 所述虚拟衬底从所述插入器连接，并且将凸块连接到面向所述插入件的下部的再分配层。