公开(公告)号：US20100059182A1

公开(公告)日：2010-03-11

申请号：US12550391

申请日：2009-08-30

申请人： Ho Chul LEE ,  Sun Hong Choi ,  Seung Ho Lee ,  Ji Hun Lee ,  Dong Kyu Lee ,  Tae Wan Lee

发明人： Ho Chul LEE ,  Sun Hong Choi ,  Seung Ho Lee ,  Ji Hun Lee ,  Dong Kyu Lee ,  Tae Wan Lee

IPC分类号： H01L21/465 ,  H05B6/10

CPC分类号： C23C16/46 ,  H01L21/67109

摘要： A substrate processing apparatus includes a chamber having a reaction space therein, a substrate seating member disposed in the reaction space of the chamber to seat a substrate thereon, an induction heating unit to heat the substrate seating member, and at least one altitude adjusting unit to selectively adjust the altitude of the induction heating unit at the outside of the chamber according to a temperature adjusting region of the substrate seating member. Therefore, it is possible to constantly control a temperature of the substrate seating member by adjusting the distance length between the substrate seating member and the induction heating unit at the outside of the chamber.

摘要翻译： 一种基板处理装置，包括：反应空间的室，设置在所述室的反应空间中以将基板安置在其上的基板安置部件;加热所述基板座部件的感应加热单元;以及至少一个高度调节单元， 根据基板座部件的温度调节区域选择性地调节室外的感应加热单元的高度。 因此，可以通过调节在室外的基板座构件和感应加热单元之间的距离长度来恒定地控制基板座部件的温度。

公开(公告)号：US20130036970A1

公开(公告)日：2013-02-14

申请号：US13641694

申请日：2011-04-14

申请人： Sun Hong Choi ,  Kwang Man Ko ,  Seung Hun Lee ,  Seung Ho Lee ,  Ho Chul Lee

发明人： Sun Hong Choi ,  Kwang Man Ko ,  Seung Hun Lee ,  Seung Ho Lee ,  Ho Chul Lee

IPC分类号： B05C13/00

CPC分类号： H01L21/6719 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/54 ,  H01L21/67126 ,  H01L21/68764 ,  H01L21/68771

摘要： A substrate processing apparatus for deposition on a water seated therein is disclosed. The substrate processing apparatus includes a chamber having a reaction space, a lid provided on the chamber to selectively open or close the reaction space, a main disc accommodated in the chamber, on which at least one wafer is placed, and a drive device including a drive shaft to selectively rotate the main disc and a drive unit to drive the drive shaft. The drive shaft is separably coupled to the main disc to transmit drive force. When the lid is opened to expose the reaction space, the main disc is separated from the drive shaft and is discharged to the outside of the chamber in a state in which the wafer is placed thereon.

摘要翻译： 公开了一种用于沉积在其上的水上的基板处理装置。 基板处理装置包括具有反应空间的室，设置在室上的盖，以选择性地打开或关闭反应空间;容纳在室中的主盘，其上放置至少一个晶片;以及驱动装置， 驱动轴以选择性地旋转主盘和驱动单元以驱动驱动轴。 驱动轴可分离地联接到主盘以传递驱动力。 当盖打开以暴露反应空间时，主盘与驱动轴分离，并且在晶片被放置在其上的状态下被排出到室外。

公开(公告)号：US20110048325A1

公开(公告)日：2011-03-03

申请号：US12746505

申请日：2010-02-26

申请人： Sun Hong Choi ,  Seung Ho Lee ,  Young Hee Lee

发明人： Sun Hong Choi ,  Seung Ho Lee ,  Young Hee Lee

IPC分类号： C23C16/455 ,  C23C16/458

CPC分类号： C23C16/45565 ,  C23C16/452 ,  C23C16/45574 ,  C23C16/45591

摘要： Provided are a gas distribution apparatus and a substrate treating apparatus including the same. The substrate treating apparatus includes a chamber comprising a reaction space, a substrate seat unit disposed in the reaction space of the chamber to radially seat a plurality of substrates with respect to a center thereof, and a gas distribution device comprising a first gas distribution part configured to eject at least two source materials onto a substrate through routes different from each other and a second gas distribution part configured to eject a source material having a decomposition temperature greater than an average of decomposition temperatures of the at least two source materials onto the substrate. The first gas distribution part is divided into at least two sections and disposed such that the second gas distribution part is positioned therebetween; and couplable and separable to/from one another.

摘要翻译： 提供一种气体分配装置和包括该气体分配装置的基板处理装置。 基板处理装置包括：室，包括反应空间;基板座单元，设置在所述室的反作用空间中，以相对于其中心径向安置多个基板;以及气体分配装置，包括：第一气体分配部， 通过彼此不同的路线将至少两种源材料喷射到基板上;以及第二气体分配部件，其配置成将具有大于所述至少两种源材料的分解温度的平均分解温度的源材料喷射到所述基板上。 第一气体分配部分被分成至少两个部分并且被布置成使得第二气体分配部分位于它们之间; 并且可以彼此联接和分离。