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    METHODS AND APPARATUS FOR CLEANING AN EDGE OF A SUBSTRATE
    2.
    发明申请
    METHODS AND APPARATUS FOR CLEANING AN EDGE OF A SUBSTRATE 审中-公开
    清洗衬底边缘的方法和装置

    公开(公告)号：US20090038642A1

    公开(公告)日：2009-02-12

    申请号：US12249922

    申请日：2008-10-11

    申请人： Wei-Yung Hsu ,  Donald J.K. Olgado ,  Ho Seon Shin ,  Liang-Yuh Chen

    发明人： Wei-Yung Hsu ,  Donald J.K. Olgado ,  Ho Seon Shin ,  Liang-Yuh Chen

    IPC分类号： B08B1/04

    CPC分类号： H01L21/67046 ,  B08B1/04 ,  H01L21/67028

    摘要： In one aspect, a method for cleaning an edge of a substrate is provided. The method comprises employing one or more rollers of a first diameter to rotate a substrate; contacting an edge of the substrate with one or more rollers of a second diameter that is larger than the first diameter; and cleaning the edge of the substrate using the one or more rollers of the second diameter. Numerous other aspects are provided.

    摘要翻译： 一方面，提供一种清洗基板的边缘的方法。 该方法包括采用一个或多个第一直径的辊来旋转衬底; 使所述基板的边缘与大于所述第一直径的第二直径的一个或多个辊接触; 以及使用所述第二直径的所述一个或多个辊清洁所述基板的边缘。 提供了许多其他方面。

    HVPE CHAMBER
    4.
    发明申请
    HVPE CHAMBER 审中-公开
    HVPE室

    公开(公告)号：US20120012049A1

    公开(公告)日：2012-01-19

    申请号：US13184390

    申请日：2011-07-15

    申请人： Wei-Yung Hsu ,  Donald J.K. Olgado ,  Anzhong Chang

    发明人： Wei-Yung Hsu ,  Donald J.K. Olgado ,  Anzhong Chang

    IPC分类号： C30B25/08 ,  C30B35/00 ,  C30B25/12

    CPC分类号： C30B25/12 ,  C23C16/303 ,  C23C16/45502 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45578 ,  C30B25/08 ,  C30B25/14

    摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have one or more precursor sources coupled thereto. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the precursors and at a lower temperature. The chamber has a truncated box shape formed by a curved cover which improves the flow of the nitrogen and precursor gases and the uniformity of the film deposition.

    摘要翻译： 本文公开的实施例通常涉及HVPE室。 腔室可以具有一个或多个耦合到其上的前体源。 例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。 氮可以在与前体和较低温度的分开的位置处引入处理室。 该腔室具有由弯曲盖形成的截头形箱形状，其改善了氮气和前体气体的流动以及膜沉积的均匀性。

    HORIZONTAL MEGASONIC MODULE FOR CLEANING SUBSTRATES
    5.
    发明申请
    HORIZONTAL MEGASONIC MODULE FOR CLEANING SUBSTRATES 审中-公开
    用于清洁基板的水平微型模块

    公开(公告)号：US20080156360A1

    公开(公告)日：2008-07-03

    申请号：US11961587

    申请日：2007-12-20

    申请人： Donald J.K. Olgado ,  Sheshraj L. Tulshibagwale ,  Thomas B. Brezoczky ,  John S. Lewis ,  Ho Seon Shin ,  Hui Chen ,  Roy C. Nangoy

    发明人： Donald J.K. Olgado ,  Sheshraj L. Tulshibagwale ,  Thomas B. Brezoczky ,  John S. Lewis ,  Ho Seon Shin ,  Hui Chen ,  Roy C. Nangoy

    IPC分类号： B08B3/00

    CPC分类号： B08B3/00 ,  B08B3/04 ,  B08B3/12

    摘要： Embodiments of the present invention relate to semiconductor device manufacturing, and more particularly to a horizontal megasonic module for cleaning substrates. In one embodiment an apparatus for cleaning a substrate is provided. The apparatus comprises a tank adapted to contain a cleaning fluid, a movable housing having a first side adapted to be placed in the cleaning fluid, a plurality of rotatable rollers coupled to the first side of the housing, the rollers positioned and including grooves to securely hold the substrate in a horizontal orientation, and one or more transducers adapted to direct vibrational energy through the cleaning fluid in the tank toward the substrate, wherein at least one of the transducers directs vibrational energy toward the substrate and substantially parallel to a major surface of the substrate.

    摘要翻译： 本发明的实施例涉及半导体器件制造，更具体地涉及用于清洁衬底的水平兆声模块。 在一个实施例中，提供了一种用于清洁基底的装置。 该设备包括适于容纳清洁流体的罐，具有适于放置在清洁流体中的第一侧的可移动壳体，与壳体的第一侧耦合的多个可旋转辊，辊定位并包括槽以牢固地 将所述基板保持在水平方向，以及一个或多个换能器，其适于将振动能量引导通过所述罐中的所述清洁流体朝向所述基板，其中所述换能器中的至少一个将振动能量引向所述基板并基本上平行于 底物。

    VERTICALLY INTEGRATED PROCESSING CHAMBER
    6.
    发明申请
    VERTICALLY INTEGRATED PROCESSING CHAMBER 审中-公开
    垂直整体式加工室

    公开(公告)号：US20110097518A1

    公开(公告)日：2011-04-28

    申请号：US12914996

    申请日：2010-10-28

    申请人： Donald J.K. Olgado

    发明人： Donald J.K. Olgado

    IPC分类号： H05H1/46 ,  C23C16/453

    CPC分类号： H05H1/46 ,  C23C16/4587 ,  C23C16/54 ,  H01J37/32

    摘要： A method and apparatus for plasma processing of substrates in a substantially vertical orientation is described. Substrates are positioned on a carrier comprising at least two frames oriented substantially vertically. The carrier is disposed in a plasma chamber with an antenna structure positioned between the substrates. Multiple plasma chambers may be coupled to a transfer chamber with a turntable for directing the carrier to a target chamber. A loader moves substrates between the carrier and a load-lock chamber in which substrates are staged in a substantially horizontal position.

    摘要翻译： 描述了用于基本垂直取向的基板的等离子体处理的方法和装置。 基板定位在包括至少两个基本上垂直定向的框架的载体上。 载体设置在等离子体室中，天线结构位于基板之间。 多个等离子体室可以连接到具有用于将载体引导到目标室的转盘的转移室。 装载机在载体和负载锁定室之间移动基板，其中基板在基本上水平的位置上分段。

    COMPOSITE SUBSTRATES FOR DIRECT HEATING AND INCREASED TEMPERATURE UNIFORMITY
    9.
    发明申请
    COMPOSITE SUBSTRATES FOR DIRECT HEATING AND INCREASED TEMPERATURE UNIFORMITY 审中-公开
    用于直接加热和增加温度均匀性的复合基材

    公开(公告)号：US20120037068A1

    公开(公告)日：2012-02-16

    申请号：US13026874

    申请日：2011-02-14

    申请人： Jie Su ,  Donald J.K. Olgado ,  Michael C. Kutney

    发明人： Jie Su ,  Donald J.K. Olgado ,  Michael C. Kutney

    IPC分类号： C30B25/02 ,  B23Q3/00 ,  F27D11/00

    CPC分类号： F27B17/0025 ,  C23C16/4586 ,  C23C16/46 ,  C30B23/063 ,  C30B25/105 ,  H01L21/67115 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

    摘要： Embodiments of the present invention generally relate to apparatus and methods for uniformly heating substrates. The apparatus include a transferable puck having at least one electrode and a dielectric coating. The transferable puck can be biased with a biasing assembly relative to a substrate, and transferred independently of the biasing assembly during a fabrication process while maintaining the bias relative to the substrate. The puck absorbs radiant heat from a heat source and uniformly conducts the heat to a substrate coupled to the puck. The puck has high emissivity and high thermal conductivity for absorbing and transferring the radiant heat to the substrate. The high thermal conductivity allows for a uniform temperature profile across the substrate, thereby increasing deposition uniformity. The method includes disposing a light-absorbing material on an optically transparent substrate, and radiating the light-absorbing material with a radiant heat source to heat the optically transparent substrate.

    摘要翻译： 本发明的实施例一般涉及用于均匀加热衬底的装置和方法。 该装置包括具有至少一个电极和介电涂层的可转移圆盘。 可转移的圆盘可以相对于基板偏压组件偏置，并且在制造过程中独立于偏置组件传递，同时保持相对于基板的偏压。 圆盘吸收来自热源的辐射热，并将热量均匀地传导到耦合到冰球的基底。 圆盘具有高辐射率和高导热性，用于吸收并将辐射热传递到基底。 高导热性允许跨基板的均匀温度分布，从而增加沉积均匀性。 该方法包括将光吸收材料设置在光学透明基板上，并且用辐射热源辐射光吸收材料以加热光学透明基板。

    CHAMBER FOR PECVD
    10.
    发明申请
    CHAMBER FOR PECVD 审中-公开
    PECVD室

    公开(公告)号：US20110097878A1

    公开(公告)日：2011-04-28

    申请号：US12914997

    申请日：2010-10-28

    申请人： Donald J.K. Olgado

    发明人： Donald J.K. Olgado

    IPC分类号： H01L21/20 ,  C23C16/448 ,  C23C16/44

    CPC分类号： H05H1/46 ,  C23C16/4587 ,  C23C16/54 ,  H01J37/32

    摘要： A method and apparatus for plasma processing of substrates in a substantially vertical orientation is described. Substrates are positioned on a carrier comprising at least two frames oriented substantially vertically. The carrier is disposed in a plasma chamber with an antenna structure positioned between the substrates. Multiple plasma chambers may be coupled to a transfer chamber with a turntable for directing the carrier to a target chamber. A loader moves substrates between the carrier and a load-lock chamber in which substrates are staged in a substantially horizontal position.

    摘要翻译： 描述了用于基本垂直取向的基板的等离子体处理的方法和装置。 基板定位在包括至少两个基本上垂直定向的框架的载体上。 载体设置在等离子体室中，天线结构位于基板之间。 多个等离子体室可以连接到具有用于将载体引导到目标室的转盘的转移室。 装载机在载体和负载锁定室之间移动基板，其中基板在基本上水平的位置上分段。