摘要:
Provided is a data parallelizing receiver including an input signal receiver for externally receiving serial data as packets, sampling the serial data, aligning the sampled data in an input order, and converting the aligned data into parallel data to output the parallel data, a cyclic redundancy check (CRC) partial calculator for receiving the parallel data, classifying the parallel data into groups according to the input order, and performing a partial CRC calculation on each of the groups to sequentially output a plurality of partial CRC calculation results, and a CRC partial calculation merger for receiving the plurality of partial CRC calculation results and merging the partial CRC calculation results to output CRC calculation data.
摘要:
A memory system selectively sets signaling modes based on stack position information. The memory system includes a memory module having at least one semiconductor memory device and a memory controller configured to set a signaling mode based on stack position information of each of the semiconductor memory devices. A signaling between the memory controller and each of the semiconductor memory devices is performed in a differential signaling mode, and a signaling among the semiconductor memory devices is performed in a single-ended signaling mode. Accordingly, the memory system has reduced power consumption.
摘要:
Example embodiments relate to a memory system and a method of controlling power thereof. The memory system may include a memory device and a memory controller. The memory device may be configured to be set to a specific power characteristic mode in response to a mode register set command so as to provide a power characteristic information corresponding to the specific power characteristic mode. The memory controller may be configured to provide the mode register set command to the memory device, configured to read the power characteristic information corresponding to the specific power characteristic mode from the memory device, configured to generate a power control information based on the power characteristic information, configured generate a command in response to the power control information, and provide the command to the memory device according to the power control information.
摘要:
Example embodiments relate to a memory system and a method of controlling power thereof. The memory system may include a memory device and a memory controller. The memory device may be configured to be set to a specific power characteristic mode in response to a mode register set command so as to provide a power characteristic information corresponding to the specific power characteristic mode. The memory controller may be configured to provide the mode register set command to the memory device, configured to read the power characteristic information corresponding to the specific power characteristic mode from the memory device, configured to generate a power control information based on the power characteristic information, configured generate a command in response to the power control information, and provide the command to the memory device according to the power control information.
摘要:
A memory system selectively sets signaling modes based on stack position information. The memory system includes a memory module having at least one semiconductor memory device and a memory controller configured to set a signaling mode based on stack position information of each of the semiconductor memory devices. A signaling between the memory controller and each of the semiconductor memory devices is performed in a differential signaling mode, and a signaling among the semiconductor memory devices is performed in a single-ended signaling mode. Accordingly, the memory system has reduced power consumption.
摘要:
A three dimensional memory module and system are formed with at least one slave chip stacked over a master chip. Through semiconductor vias (TSVs) are formed through at least one of the master and slave chips. The master chip includes a memory core for increased capacity of the memory module/system. In addition, capacity organizations of the three dimensional memory module/system resulting in efficient wiring is disclosed for forming multiple memory banks, multiple bank groups, and/or multiple ranks of the three dimensional memory module/system.
摘要:
A latency control circuit includes a FIFO controller and a register unit. The FIFO controller may generate an increase signal according to an external command, and generate a decrease signal according to an internal command. The FIFO controller may also enable a depth point signal responsive to the increase signal and the decrease signal. The register unit may include n registers. The value n (rounded off) may be obtained by dividing a larger value of a maximum number of additive latencies and a maximum number of write latencies by a column cycle delay time (tCCD). The registers may store an address received with the external command responsive to the increase signal and a clock signal, and may shift either the address or a previous address to a neighboring register. The latency control circuit transmits an address stored in a register as a column address corresponding to the enabled depth point signal.
摘要:
A system, device and related method are used to communicate data via a plurality of data lanes including a selected data lane. In a first mode of operation, payload data and related supplemental data are communicated via the plurality of data lanes including the selected data lane. In a second mode of operation, only payload data is communicated via the plurality of data lanes, except the selected data lane.
摘要:
A three dimensional memory module and system are formed with at least one slave chip stacked over a master chip. Through semiconductor vias (TSVs) are formed through at least one of the master and slave chips. The master chip includes a memory core for increased capacity of the memory module/system. In addition, capacity organizations of the three dimensional memory module/system resulting in efficient wiring is disclosed for forming multiple memory banks, multiple bank groups, and/or multiple ranks of the three dimensional memory module/system.
摘要:
A semiconductor device having an electrostatic discharge (ESD) protection circuit and a method of testing the same may provided. The semiconductor device may include one or more stacked chips, each stacked chip may include a test circuit configured to output a test control signal and a selection control signal in response to a test enable signal, an internal circuit configured to perform an operation and output a plurality of test signals in response to the test control signal, at least one multiplexer (MUX) configured to select and output one of the plurality of test signals based on the selection control signal, at least one test pad configured to receive the selected test signal, and at least one electrostatic discharge (ESD) protection circuit configured to discharge static electricity applied through the test pad externally.