公开(公告)号：US5922496A

公开(公告)日：1999-07-13

申请号：US972183

申请日：1997-11-18

申请人： Hormazdyar Minocher Dalal ,  Gene Joseph Gaudenzi ,  Frederic Robert Pierre ,  Georges Henri Robert

发明人： Hormazdyar Minocher Dalal ,  Gene Joseph Gaudenzi ,  Frederic Robert Pierre ,  Georges Henri Robert

IPC分类号： G03F7/00 ,  G03F7/40 ,  H01L21/60 ,  G03F9/00

CPC分类号： G03F7/40 ,  H01L24/11 ,  G03F7/00 ,  H01L2224/11005 ,  H01L2224/11472 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14

摘要： A material deposition contact mask is disclosed in which apertures formed therein have a larger dimension in lower openings in a bottom side of the mask contacting the substrate than in constricted openings located near the top side of the mask. Apertures of the contact mask have knife edges located within the upper sidewalls thereof, e.g. within the top 25% of the mask thickness above the substrate. A mask is disclosed which, in addition, is thermally compensated to the substrate temperature at which the deposition is performed. Methods for fabricating the mask by differential etching are disclosed.

摘要翻译： 公开了一种材料沉积接触掩模，其中形成在其中的孔在与掩模接触的掩模的底侧中的下开口中具有比在位于掩模的顶侧附近的收缩开口中更大的尺寸。 接触掩模的孔径具有位于其上侧壁内的刀刃，例如， 在衬底上方的掩模厚度的前25％内。 公开了一种掩模，其另外被热补偿到执行沉积的衬底温度。 公开了通过差分蚀刻来制造掩模的方法。

公开(公告)号：US6051273A

公开(公告)日：2000-04-18

申请号：US972184

申请日：1997-11-18

申请人： Hormazdyar Minocher Dalal ,  Gene Joseph Gaudenzi ,  Frederic Robert Pierre ,  Georges Henri Robert

发明人： Hormazdyar Minocher Dalal ,  Gene Joseph Gaudenzi ,  Frederic Robert Pierre ,  Georges Henri Robert

IPC分类号： B23K3/06 ,  B05D5/12

CPC分类号： B23K3/0623

摘要： A material deposition process is disclosed in which apertures of a contact mask used therein have a constricted opening terminating in a `knife edge` in a sidewall thereof near the top mask side, especially within the top 25% of the mask thickness above the substrate. A process is disclosed in which the mask, in addition, has apertures which have larger dimension lower openings on a bottom side of the mask contacting the substrate than constricted openings near the top side of the mask. Single solder bump and "bump on bump" over BLM (ball limiting metallurgy) processes are disclosed which utilize such contact mask to reduce the damage and detaching of such features during processing and subsequent handling.

摘要翻译： 公开了一种材料沉积工艺，其中在其中使用的接触掩模的孔具有在靠近顶部掩模侧的侧壁中的“刀刃”中终止的收缩开口，特别是在衬底上方的掩模厚度的顶部25％之内。 公开了一种方法，其中掩模另外具有孔，其具有在与掩模接触的底部的较大尺寸的下部开口，而不是靠近掩模顶侧的收缩开口。 公开了在BLM（球限制冶金）方法中的单个焊料凸块和“凸起凸起”工艺，其利用这种接触掩模在处理和随后的处理期间减少这些特征的损坏和分离。

公开(公告)号：US06344234B1

公开(公告)日：2002-02-05

申请号：US08476475

申请日：1995-06-07

申请人： Hormazdyar Minocher Dalal ,  Alexis Bitaillou ,  Kenneth Michael Fallon ,  Gene Joseph Gaudenzi ,  Kenneth Robert Herman ,  Frederic Pierre ,  Georges Robert

发明人： Hormazdyar Minocher Dalal ,  Alexis Bitaillou ,  Kenneth Michael Fallon ,  Gene Joseph Gaudenzi ,  Kenneth Robert Herman ,  Frederic Pierre ,  Georges Robert

IPC分类号： B05D512

CPC分类号： H01L24/12 ,  H01L21/4853 ,  H01L23/49816 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/11472 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/136 ,  H01L2224/13609 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19043 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/10992 ,  H05K2203/0435 ,  Y02P70/613 ,  Y10T29/49144 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/013

摘要： A method and structure for a solder interconnection, using solder balls for making a low temperature chip attachment directly to any of the higher levels of packaging substrate is disclosed. After a solder ball has been formed using standard methods it is reflowed to give the solder ball a smooth surface. A layer of low melting point metal, such as, bismuth, indium or tin, preferably, pure tin, is deposited on the top of the solder balls. This structure results in localizing of the eutectic alloy, formed upon subsequent low temperature joining cycle, to the top of the high melting solder ball even after multiple low temperature reflow cycles. This method does not need tinning of the substrate to which the chip is to be joined, which makes this method economical. It has also been noticed that whenever temperature is raised slightly above the eutectic temperature, the structure always forms a liquid fillet around the joint with copper wires. This liquid fillet formation results in substantial thermal fatigue life improvement for reduced stress at interface; and secondly, provides an easy means to remove chip for the purpose of chip burn-in, replacement or field repairs.

摘要翻译： 公开了一种用于焊接互连的方法和结构，其使用用于将低温芯片附接到任何更高级别的封装衬底的焊球。 在使用标准方法形成焊球后，回流焊锡球表面光滑。 一层低熔点金属，例如铋，铟或锡，优选纯锡，沉积在焊料球的顶部。 这种结构导致即使在多个低温回流循环之后，在随后的低温接合循环中形成的共晶合金也定位到高熔点焊球的顶部。 该方法不需要对芯片要连接的基板进行镀锡，这使得该方法成本低廉。 还注意到，当温度升高到略高于共熔温度的情况下，结构总是用铜线在接头周围形成液体圆角。 这种液体圆角形成导致显着的热疲劳寿命改善以减少界面处的应力; 其次，为了芯片烧录，更换或现场维修的目的，提供了一种便于拆卸芯片的方法。

公开(公告)号：US06336262B1

公开(公告)日：2002-01-08

申请号：US08846931

申请日：1997-04-30

申请人： Hormazdyar M. Dalal ,  Gene Joseph Gaudenzi ,  Rebecca Y. Gorrell ,  Mark A. Takacs ,  Kenneth J. Travis, Jr.

发明人： Hormazdyar M. Dalal ,  Gene Joseph Gaudenzi ,  Rebecca Y. Gorrell ,  Mark A. Takacs ,  Kenneth J. Travis, Jr.

IPC分类号： H01G700

CPC分类号： H01L21/563 ,  H01L23/49816 ,  H01L23/5387 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/136 ,  H01L2224/16 ,  H01L2224/73203 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H05K1/189 ,  H05K3/0061 ,  H05K3/341 ,  H05K3/3436 ,  H05K3/3484 ,  H05K2201/035 ,  H05K2201/10015 ,  H05K2201/10674 ,  H05K2201/10734 ,  H05K2201/10992 ,  H05K2203/0165 ,  Y02P70/613 ,  Y10T29/435 ,  Y10T29/49133 ,  Y10T29/49144 ,  Y10T29/49213 ,  H01L2224/05599 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2924/013 ,  H01L2924/01074

摘要： A capacitor having a multilevel interconnection technology and process thereof. Also disclosed is a process of electrically connecting a capacitor to an object, comprising the steps of first obtaining a capacitor. At least one solder ball is reflowed and secured onto the capacitor. The solder ball is in electrical communication with the capacitor through a contacting means. On this reflowed solder ball a cap of low melting point metal is secured. This can be done in a number of ways. The preferred way is to positioning a mask over the solder ball such that a portion of the solder ball is exposed through openings in the mask. At least one layer of a low melting point metal is deposited on the exposed surface of the solder ball through the mask, and thereby forming a capacitor with a multilevel interconnect cap. The low melting point metal can interact with the surface of the solder ball to form a cap of an eutectic or a liquefied portion. The cap portion can then be joined to the object.

摘要翻译： 一种具有多层互连技术的电容器及其工艺。 还公开了将电容器电连接到物体的处理，包括以下步骤：首先获得电容器。 至少一个焊球被回流并固定在电容器上。 焊球通过接触装置与电容器电连通。 在这个回流的焊球上，确保了低熔点金属的盖子。 这可以通过多种方式完成。 优选的方式是将掩模定位在焊球上，使得焊球的一部分通过掩模中的开口露出。 通过掩模将至少一层低熔点金属沉积在焊球的暴露表面上，从而形成具有多层互连盖的电容器。 低熔点金属可以与焊球的表面相互作用以形成共晶或液化部分的盖。 盖部分然后可以连接到物体。

公开(公告)号：US06618267B1

公开(公告)日：2003-09-09

申请号：US09158616

申请日：1998-09-22

申请人： Hormazdyar M. Dalal ,  Gene Joseph Gaudenzi

发明人： Hormazdyar M. Dalal ,  Gene Joseph Gaudenzi

IPC分类号： H05K114

CPC分类号： H01L25/165 ,  H01L23/5385 ,  H01L23/552 ,  H01L25/105 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2225/107 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/1627 ,  H01L2924/19105 ,  H01L2924/3025 ,  H05K1/144

摘要： A multi-level package, and method for making same, that offers a small size with compartmentalized areas that allow for radiation shielding is disclosed. In its simplest embodiment, the invention comprises two cards and an interposer interposed between the two cards. The interposer preferably has an opening, and the combination of the interposer's opening and the two cards form a cavity. The cavity allows for a high amount of components to be packed into a small, three-dimensional space. The interposer supports can act like a Faraday shield. The two cards and interposer can be multi-layered and support any type of chip or package connection on each side of each card or interposer, including through-hole, surface mount, and direct-chip attachment connections. Finally, pick-up plates or heat sinks can be attached to the package.

摘要翻译： 公开了一种多级封装及其制造方法，其提供具有允许辐射屏蔽的隔间区域的小尺寸。 在其最简单的实施例中，本发明包括两个卡和插入在两个卡之间的插入器。 插入器优选具有开口，并且插入件的开口和两个卡的组合形成空腔。 空腔允许将大量的组分包装成小的三维空间。 内插器支持可以像法拉第盾一样。 两个卡和插入器可以是多层的，并支持每个卡或插入器的每一侧上的任何类型的芯片或封装连接，包括通孔，表面贴装和直接芯片连接。 最后，拾取板或散热片可以附在包装上。

公开(公告)号：US5808853A

公开(公告)日：1998-09-15

申请号：US846930

申请日：1997-04-30

申请人： Hormazdyar M. Dalal ,  Gene Joseph Gaudenzi ,  Rebecca Y. Gorrell ,  Mark A. Takacs ,  Kenneth J. Travis, Jr.

发明人： Hormazdyar M. Dalal ,  Gene Joseph Gaudenzi ,  Rebecca Y. Gorrell ,  Mark A. Takacs ,  Kenneth J. Travis, Jr.

IPC分类号： H01L21/56 ,  H01L21/60 ,  H01L23/498 ,  H01L23/538 ,  H05K1/18 ,  H05K3/00 ,  H05K3/34 ,  H01G4/228

CPC分类号： H01L21/563 ,  H01L23/49816 ,  H01L23/5387 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H05K3/341 ,  H05K3/3436 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/136 ,  H01L2224/13609 ,  H01L2224/16 ,  H01L2224/73203 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H05K1/189 ,  H05K2201/035 ,  H05K2201/10015 ,  H05K2201/10674 ,  H05K2201/10734 ,  H05K2201/10992 ,  H05K2203/0165 ,  H05K3/0061 ,  H05K3/3484 ,  Y02P70/613

摘要： This invention is directed to a capacitor having a multilevel interconnection technology. At least one solder ball is reflowed and secured onto the capacitor. The solder ball is in electrical communication with the capacitor through a contact. On this reflowed solder ball a cap of low melting point metal is secured. This can be done in a number of ways. The preferred way is to positioning a mask over the solder ball such that a portion of the solder ball is exposed through openings in the mask. At least one layer of a low melting point metal is deposited on the exposed surface of the solder ball through the mask, and thereby forming a capacitor with a multilevel interconnect cap. The low melting point metal can interact with the surface of the solder ball to form a cap of an eutectic or a liquefied portion. The cap portion can then be joined to the object.

摘要翻译： 本发明涉及具有多层互连技术的电容器。 至少一个焊球被回流并固定在电容器上。 焊球通过触点与电容器电连通。 在这个回流的焊球上，确保了低熔点金属的盖子。 这可以通过多种方式完成。 优选的方式是将掩模定位在焊球上，使得焊球的一部分通过掩模中的开口露出。 通过掩模将至少一层低熔点金属沉积在焊球的暴露表面上，从而形成具有多层互连盖的电容器。 低熔点金属可以与焊球的表面相互作用以形成共晶或液化部分的盖。 盖部分然后可以连接到物体。