摘要:
The present invention provides a monitoring method for monitoring a semiconductor wafer, in a chemical mechanical polishing (CMP) process. The CMP process is used to polish a dielectric layer of the semiconductor. The monitoring method comprises: 1. exposing the dielectric layer of the semiconductor wafer to an input light beam of fixed wavelength at a predetermined angle to generate a reflected light beam within a predetermined time period after performing the CMP process, the intensity of the reflected light beam undergoing periodic changes in response to the gradual thinning of the dielectric layer during the CMP process, 2. monitoring the intensity of the reflected light beam at a starting period within the predetermined time period and obtaining a periodic change rule according to the periodic changes of the intensity of the reflected light beam, and 3. monitoring the intensity of the reflected light beam throughout the rest of the predetermined time period and generating an output signal to stop the CMP process if the change of the intensity of the reflected light beam is not in accordance with the periodic change rule.
摘要:
The present invention relates to a method for removing a first dielectric layer of a semiconductor wafer. The first dielectric layer is formed on the surface of a second dielectric layer of the semiconductor wafer. The method comprises performing a chemical mechanical polishing (CMP) process on the first dielectric layer to remove a predetermined thickness of the first dielectric layer, measuring the remaining thickness of the first dielectric layer, providing an etching table having a plurality of thickness ranges of the remaining first dielectric layer and corresponding etching back procedure or parameters of each of the thickness ranges, and performing an etching back process to horizontally remove the remaining first dielectric layer according to the etching back procedure or parameters of the thickness range corresponding to the measured thickness of the remaining first dielectric layer.
摘要:
An improved exhaust line of a chemical-mechanical polisher will improve polishing performance. A chemical-mechanical polisher is in a polishing chamber, wherein the chemical-mechanical polisher contains a polishing table, a plurality of polishing pads on the polishing table, and a plurality of outlets on the polishing table. A plurality of exhaust lines is connected with the plurality of the outlets, wherein the exhaust lines are used to drive out exhaust gas and sewage generated in the polishing chamber. At least a gas-liquid separating device is connected with the plurality of the exhaust lines, wherein the gas-liquid separating device is used for separation of the exhaust and the sewage. The gas-liquid separating device comprises a sewage collector, a filter, a pump, and a sewage-collecting device. The sewage collector is connected with the plurality of the outlets, wherein the sewage collector is used for collecting the exhaust gas and the sewage driven out through the plurality of outlets. The filter is connected with the top of the gas-liquid separating device. The pump is connected with the filter. The sewage-collecting device is connected with the bottom of the gas-liquid separating device, wherein the sewage-collecting device is used for collecting the sewage.
摘要:
A method for fabricating a shallow trench isolation (STI) structure is provided. The method contain sequentially forming a pad oxide layer, a hard layer, and a polysilicon layer on the substrate, all of which are patterned to form a trench in the substrate to define several active areas. The hard layer usually includes silicon nitride. An insulating layer is formed over the substrate so that the trench is also filled. A CMP process is performed to polish the insulating layer. The CMP process is continuously performed until the hard layer is completely exposed. The hard layer and the pad oxide layer are sequentially removed to form the STI structure.
摘要:
A method of fabricating a shallow trench isolation. A pad oxide layer, a mask layer, an oxide layer, and a polysilicon layer are formed over a substrate. A trench is formed in order to define active regions of the substrate. An oxide layer is filled in the trenches. There is a high etching selectivity for etching the oxide layer and the polysilicon layer. Thus, the polysilicon layer can be used as an etching stop layer. The polishing etching rates of the polysilicon layer and the silicon oxide layer are close during a chemical-mechanical polishing process. In this manner, a smooth surface over the active regions can be formed. Polishing and etching processes are performed in order to form a shallow trench isolation.
摘要:
The present invention is related to an electrochemical paper towel sterilizing device, which mainly comprises: at least one sterilizing device, at least one first accommodating space, at least one water-inlet portion, at least one electrolytic component, at least one power-supply element, and at least one second accommodating space. In this way, the second accommodating space is provided with a dry wiping-object (such as a paper towel), and the user can add water into the first accommodating space via the water-inlet portion and electrolyze the water through the electrolytic component to generate the high active oxygen species, and combine the water and the high active oxygen species into the wiping-object, thereby producing a wet wiping-object with sterilizing effect.
摘要:
An energy saving device for accelerated pressurization in an injection molding machine includes a mold needing vapor and cooled water or oil in an injection molding process. The cooled water or oil is provided by a pump, followed by connecting to the mold through a water or oil supply pipeline. The interior of the accelerated pressurization energy saving pipe is a through hole. Three or more spiral grooves are provided on the inner peripheral surface of the through hole and having an angle rotated in a front direction, with the lateral direction of each spiral groove having an inclined angle. The vapor or water or oil enforces angle rotation and inclined angle accelerated pressurization.
摘要:
An image processing apparatus and an image processing method are provided. When a display apparatus is in the 3D display mode, a mode-switching unit adjusts the way to generate a vertical-count-value by counting every two rows of pixels and outputs the adjusted vertical-count-value. A dither unit outputs a carry value corresponding to the adjusted vertical-count-value. An adding unit adds the carry value and the surplus pixel bit together.
摘要:
The present invention provides a 3D image signal controlling method. The method comprises inputting a left eye image into the first liquid crystal layer, turning off the backlight module and switching gray levels of the second liquid crystal layer to a minimum gray level during (4N−3)th time interval, wherein N is natural number; stopping inputting the left eye image, turning on the backlight module and remaining the gray levels of the second liquid crystal layer as the minimum gray level during (4N−2)th time interval; inputting a right eye image into the first liquid crystal layer, turning off the backlight module and switching the gray levels of the second liquid crystal layer as a maximum gray level during (4N−1)th time interval; and stopping inputting the right eye image, turning on the backlight module and remaining the gray levels of the second liquid crystal layer as the maximum gray level during (4N)th time interval.
摘要:
A remote controller includes a housing, a direction sensor, a microphone, a controller, and a wireless transmitter. A control method of the remote controller includes detecting an angle between an axis of a remote controller and a vertical axis, enabling a microphone of the remote controller when the angle is within a predetermined range in order to generate a voice signal according to a voice command, and generating a first control signal according the voice signal and transmit the first control signal wirelessly.