Method for monitoring a semiconductor wafer in a chemical mechanical polishing process
    1.
    发明授权
    Method for monitoring a semiconductor wafer in a chemical mechanical polishing process 有权
    在化学机械抛光工艺中监测半导体晶片的方法

    公开(公告)号:US06580508B1

    公开(公告)日:2003-06-17

    申请号:US09449533

    申请日:1999-11-29

    IPC分类号: G01N2155

    摘要: The present invention provides a monitoring method for monitoring a semiconductor wafer, in a chemical mechanical polishing (CMP) process. The CMP process is used to polish a dielectric layer of the semiconductor. The monitoring method comprises: 1. exposing the dielectric layer of the semiconductor wafer to an input light beam of fixed wavelength at a predetermined angle to generate a reflected light beam within a predetermined time period after performing the CMP process, the intensity of the reflected light beam undergoing periodic changes in response to the gradual thinning of the dielectric layer during the CMP process, 2. monitoring the intensity of the reflected light beam at a starting period within the predetermined time period and obtaining a periodic change rule according to the periodic changes of the intensity of the reflected light beam, and 3. monitoring the intensity of the reflected light beam throughout the rest of the predetermined time period and generating an output signal to stop the CMP process if the change of the intensity of the reflected light beam is not in accordance with the periodic change rule.

    摘要翻译: 本发明提供了一种用于在化学机械抛光(CMP)工艺中监测半导体晶片的监控方法。 CMP工艺用于抛光半导体的电介质层。 监视方法包括:1.将半导体晶片的电介质层以预定角度曝光到固定波长的输入光束,以在执行CMP处理之后的预定时间段内产生反射光束,反射光的强度 在CMP工艺期间响应于电介质层逐渐变薄的光束经历周期性变化,2.在预定时间段内在起始时段监测反射光束的强度,并根据周期性变化规律获得周期性变化规律 反射光束的强度,以及3.在预定时间段的其余时间内监测反射光束的强度,并且如果反射光束的强度的变化不是,则产生输出信号以停止CMP处理 按照定期变更规则。

    Method of preventing micro-scratches on the surface of a semiconductor wafer when performing a CMP process
    2.
    发明授权
    Method of preventing micro-scratches on the surface of a semiconductor wafer when performing a CMP process 有权
    当执行CMP处理时,防止半导体晶片的表面上的微划痕的方法

    公开(公告)号:US06242352B1

    公开(公告)日:2001-06-05

    申请号:US09264013

    申请日:1999-02-08

    IPC分类号: H01L21302

    摘要: The present invention relates to a method for removing a first dielectric layer of a semiconductor wafer. The first dielectric layer is formed on the surface of a second dielectric layer of the semiconductor wafer. The method comprises performing a chemical mechanical polishing (CMP) process on the first dielectric layer to remove a predetermined thickness of the first dielectric layer, measuring the remaining thickness of the first dielectric layer, providing an etching table having a plurality of thickness ranges of the remaining first dielectric layer and corresponding etching back procedure or parameters of each of the thickness ranges, and performing an etching back process to horizontally remove the remaining first dielectric layer according to the etching back procedure or parameters of the thickness range corresponding to the measured thickness of the remaining first dielectric layer.

    摘要翻译: 本发明涉及一种去除半导体晶片的第一介质层的方法。 第一电介质层形成在半导体晶片的第二电介质层的表面上。 该方法包括在第一电介质层上进行化学机械抛光(CMP)处理以去除第一介电层的预定厚度,测量第一电介质层的剩余厚度,提供具有多个厚度范围的蚀刻台 剩余的第一介电层和相应的回蚀程序或每个厚度范围的参数,并且根据蚀刻回程或对应于测量厚度的厚度范围的参数执行蚀刻回加工以水平去除剩余的第一介电层 剩余的第一介电层。

    Exhaust line of chemical-mechanical polisher
    3.
    发明授权
    Exhaust line of chemical-mechanical polisher 失效
    化学机械抛光机排气管

    公开(公告)号:US06139680A

    公开(公告)日:2000-10-31

    申请号:US212371

    申请日:1998-12-15

    CPC分类号: B24B55/12 B01D46/00 B24B37/04

    摘要: An improved exhaust line of a chemical-mechanical polisher will improve polishing performance. A chemical-mechanical polisher is in a polishing chamber, wherein the chemical-mechanical polisher contains a polishing table, a plurality of polishing pads on the polishing table, and a plurality of outlets on the polishing table. A plurality of exhaust lines is connected with the plurality of the outlets, wherein the exhaust lines are used to drive out exhaust gas and sewage generated in the polishing chamber. At least a gas-liquid separating device is connected with the plurality of the exhaust lines, wherein the gas-liquid separating device is used for separation of the exhaust and the sewage. The gas-liquid separating device comprises a sewage collector, a filter, a pump, and a sewage-collecting device. The sewage collector is connected with the plurality of the outlets, wherein the sewage collector is used for collecting the exhaust gas and the sewage driven out through the plurality of outlets. The filter is connected with the top of the gas-liquid separating device. The pump is connected with the filter. The sewage-collecting device is connected with the bottom of the gas-liquid separating device, wherein the sewage-collecting device is used for collecting the sewage.

    摘要翻译: 化学机械抛光机的改进的排气管线将提高抛光性能。 化学机械抛光机在抛光室中,其中化学机械抛光机包含抛光台,抛光台上的多个抛光垫和抛光台上的多个出口。 多个排气管路与多个出口连接,其中排气管线用于驱除在抛光室中产生的废气和污水。 至少一个气液分离装置与多个排气管连接,其中气液分离装置用于分离废气和污水。 气液分离装置包括污水收集器,过滤器,泵和污水收集装置。 污水收集器与多个出口连接,其中污水收集器用于收集废气,并通过多个出口排出污水。 过滤器与气液分离装置的顶部连接。 泵与过滤器连接。 污水收集装置与气液分离装置的底部连接,其中污水收集装置用于收集污水。

    Method for fabricating a shallow trench isolation structure
    4.
    发明授权
    Method for fabricating a shallow trench isolation structure 失效
    浅沟槽隔离结构的制造方法

    公开(公告)号:US06303461B1

    公开(公告)日:2001-10-16

    申请号:US09221203

    申请日:1998-12-23

    IPC分类号: H01L2176

    CPC分类号: H01L21/76229

    摘要: A method for fabricating a shallow trench isolation (STI) structure is provided. The method contain sequentially forming a pad oxide layer, a hard layer, and a polysilicon layer on the substrate, all of which are patterned to form a trench in the substrate to define several active areas. The hard layer usually includes silicon nitride. An insulating layer is formed over the substrate so that the trench is also filled. A CMP process is performed to polish the insulating layer. The CMP process is continuously performed until the hard layer is completely exposed. The hard layer and the pad oxide layer are sequentially removed to form the STI structure.

    摘要翻译: 提供了一种制造浅沟槽隔离(STI)结构的方法。 该方法包括在衬底上顺序地形成衬垫氧化物层,硬质层和多晶硅层,所有这些都被图案化以在衬底中形成沟槽以限定若干有效区域。 硬层通常包括氮化硅。 在衬底上形成绝缘层,使得沟槽也被填充。 执行CMP工艺以抛光绝缘层。 连续进行CMP工艺,直到硬质层完全暴露。 顺序地除去硬质层和焊盘氧化物层以形成STI结构。

    Method of fabricating shallow trench isolation
    5.
    发明授权
    Method of fabricating shallow trench isolation 失效
    浅沟槽隔离的制作方法

    公开(公告)号:US06238997B1

    公开(公告)日:2001-05-29

    申请号:US09237162

    申请日:1999-01-25

    IPC分类号: H01L2176

    CPC分类号: H01L21/76229

    摘要: A method of fabricating a shallow trench isolation. A pad oxide layer, a mask layer, an oxide layer, and a polysilicon layer are formed over a substrate. A trench is formed in order to define active regions of the substrate. An oxide layer is filled in the trenches. There is a high etching selectivity for etching the oxide layer and the polysilicon layer. Thus, the polysilicon layer can be used as an etching stop layer. The polishing etching rates of the polysilicon layer and the silicon oxide layer are close during a chemical-mechanical polishing process. In this manner, a smooth surface over the active regions can be formed. Polishing and etching processes are performed in order to form a shallow trench isolation.

    摘要翻译: 制造浅沟槽隔离的方法。 在衬底上形成衬垫氧化物层,掩模层,氧化物层和多晶硅层。 形成沟槽以便限定衬底的有源区。 氧化层填充在沟槽中。 蚀刻氧化物层和多晶硅层的蚀刻选择性高。 因此,多晶硅层可以用作蚀刻停止层。 在化学机械抛光过程中,多晶硅层和氧化硅层的抛光蚀刻速率接近。 以这种方式,可以形成活性区域上的平滑表面。 进行抛光和蚀刻工艺以形成浅沟槽隔离。

    ELECTROCHEMICAL PAPER TOWEL STERILIZING DEVICE

    公开(公告)号:US20200101181A1

    公开(公告)日:2020-04-02

    申请号:US16143480

    申请日:2018-09-27

    申请人: Chien-Hung Chen

    发明人: Chien-Hung Chen

    IPC分类号: A61L2/00 A61L2/20 C02F1/467

    摘要: The present invention is related to an electrochemical paper towel sterilizing device, which mainly comprises: at least one sterilizing device, at least one first accommodating space, at least one water-inlet portion, at least one electrolytic component, at least one power-supply element, and at least one second accommodating space. In this way, the second accommodating space is provided with a dry wiping-object (such as a paper towel), and the user can add water into the first accommodating space via the water-inlet portion and electrolyze the water through the electrolytic component to generate the high active oxygen species, and combine the water and the high active oxygen species into the wiping-object, thereby producing a wet wiping-object with sterilizing effect.

    Energy Saving Device for Accelerated Pressurization in Injection Molding Machine
    7.
    发明申请
    Energy Saving Device for Accelerated Pressurization in Injection Molding Machine 审中-公开
    注塑机加速加压节能装置

    公开(公告)号:US20150336317A1

    公开(公告)日:2015-11-26

    申请号:US14285692

    申请日:2014-05-23

    IPC分类号: B29C45/77

    摘要: An energy saving device for accelerated pressurization in an injection molding machine includes a mold needing vapor and cooled water or oil in an injection molding process. The cooled water or oil is provided by a pump, followed by connecting to the mold through a water or oil supply pipeline. The interior of the accelerated pressurization energy saving pipe is a through hole. Three or more spiral grooves are provided on the inner peripheral surface of the through hole and having an angle rotated in a front direction, with the lateral direction of each spiral groove having an inclined angle. The vapor or water or oil enforces angle rotation and inclined angle accelerated pressurization.

    摘要翻译: 在注射成型机中用于加速加压的节能装置包括在注射成型工艺中需要蒸汽和冷却的水或油的模具。 冷却水或油由泵提供,然后通过水或油供应管道连接到模具。 加速加压节能管的内部是通孔。 在贯通孔的内周面上设置有三个以上的螺旋槽,并且具有沿前后方向旋转的角度,每个螺旋槽的横向方向具有倾斜角。 蒸汽或水或油会执行角度旋转和倾斜角加速加压。

    Signal controlling method for 3D image display device
    9.
    发明授权
    Signal controlling method for 3D image display device 有权
    3D图像显示装置的信号控制方法

    公开(公告)号:US08848115B2

    公开(公告)日:2014-09-30

    申请号:US12954869

    申请日:2010-11-27

    CPC分类号: G02B27/26 H04N13/337

    摘要: The present invention provides a 3D image signal controlling method. The method comprises inputting a left eye image into the first liquid crystal layer, turning off the backlight module and switching gray levels of the second liquid crystal layer to a minimum gray level during (4N−3)th time interval, wherein N is natural number; stopping inputting the left eye image, turning on the backlight module and remaining the gray levels of the second liquid crystal layer as the minimum gray level during (4N−2)th time interval; inputting a right eye image into the first liquid crystal layer, turning off the backlight module and switching the gray levels of the second liquid crystal layer as a maximum gray level during (4N−1)th time interval; and stopping inputting the right eye image, turning on the backlight module and remaining the gray levels of the second liquid crystal layer as the maximum gray level during (4N)th time interval.

    摘要翻译: 本发明提供一种3D图像信号控制方法。 该方法包括在(4N-3)时间间隔期间将左眼图像输入到第一液晶层中,关闭背光模块并将第二液晶层的灰度级切换到最小灰度级,其中N是自然数 ; 停止输入左眼图像,在(4N-2)时间间隔期间打开背光模块并保持第二液晶层的灰度级为最小灰度级; 在第(4N-1)次间隔期间,将右眼图像输入到第一液晶层中,关闭背光模块并将第二液晶层的灰度级切换为最大灰度级; 停止输入右眼图像,在(4N)时间间隔期间打开背光模块并保持第二液晶层的灰度级为最大灰度级。

    REMOTE CONTROLLER AND CONTROL METHOD THEREOF
    10.
    发明申请
    REMOTE CONTROLLER AND CONTROL METHOD THEREOF 审中-公开
    远程控制器及其控制方法

    公开(公告)号:US20130325480A1

    公开(公告)日:2013-12-05

    申请号:US13612856

    申请日:2012-09-13

    IPC分类号: G10L21/00

    摘要: A remote controller includes a housing, a direction sensor, a microphone, a controller, and a wireless transmitter. A control method of the remote controller includes detecting an angle between an axis of a remote controller and a vertical axis, enabling a microphone of the remote controller when the angle is within a predetermined range in order to generate a voice signal according to a voice command, and generating a first control signal according the voice signal and transmit the first control signal wirelessly.

    摘要翻译: 遥控器包括壳体,方向传感器,麦克风,控制器和无线发射器。 遥控器的控制方法包括检测遥控器的轴与垂直轴之间的角度,当角度在预定范围内时,使得遥控器的麦克风能够根据语音命令产生语音信号 ,并根据该语音信号生成第一控制信号,并以无线方式发送第一控制信号。