利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

234 条记录 (耗时 0.033 秒)

    Chemical precursor ampoule for vapor deposition processes
    2.
    发明授权
    Chemical precursor ampoule for vapor deposition processes 有权
    用于气相沉积工艺的化学前体安瓿瓶

    公开(公告)号：US07597758B2

    公开(公告)日：2009-10-06

    申请号：US11849125

    申请日：2007-08-31

    申请人： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

    发明人： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

    IPC分类号： C30B23/08

    CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4487 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

    摘要： Embodiments of the invention provide chemical precursor ampoules that may be used during vapor deposition processes. In one embodiment, an apparatus for generating a chemical precursor gas used in a vapor deposition processing system is provided which includes a canister having a sidewall, a top, and a bottom forming an interior volume and a solid precursor material at least partially contained within a lower region of the interior volume. The apparatus further contains an inlet port and an outlet port in fluid communication with the interior volume and an inlet tube connected to the inlet port and positioned to direct a carrier gas towards the sidewall and away form the outlet port. In one example, the solid precursor contains pentakis(dimethylamido) tantalum (PDMAT). In another example, the apparatus contains a plurality of baffles that form an extended mean flow path between the inlet port and the outlet port.

    摘要翻译： 本发明的实施方案提供可在气相沉积工艺期间使用的化学前体安瓿。 在一个实施例中，提供了一种用于产生在气相沉积处理系统中使用的化学前体气体的装置，其包括具有侧壁，顶部和形成内部容积的底部的罐，以及固体前体材料，其至少部分地包含在 内部体积的较低区域。 该装置还包括与内部空间流体连通的入口端口和出口端口，以及连接到入口端口的入口管，并且定位成将载气朝向侧壁引导并从出口端口移开。 在一个实例中，固体前体含有五（二甲基氨基）钽（PDMAT）。 在另一示例中，该装置包含多个挡板，其在入口和出口之间形成延伸的平均流动路径。

    Apparatus and method for generating a chemical precursor
    3.
    发明授权
    Apparatus and method for generating a chemical precursor 有权
    用于产生化学前体的装置和方法

    公开(公告)号：US07588736B2

    公开(公告)日：2009-09-15

    申请号：US11383642

    申请日：2006-05-16

    申请人： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

    发明人： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

    IPC分类号： F27B15/08

    CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4487 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

    摘要： Embodiments of an apparatus for generating a chemical precursor used in a vapor deposition processing system are provide which include a canister having a sidewall, a top, and a bottom forming an interior volume which is in fluid communication with an inlet port and an outlet port. The canister contains a plurality of baffles that extend from the bottom to an upper portion of the interior volume and form an extended mean flow path between the inlet port and the outlet port. In one embodiment, the baffles are contained on a prefabricated insert positioned on the bottom of the canister. In one example, an inlet tube may extend from the inlet port into the interior region and be positioned substantially parallel to the baffles. An outlet end of the inlet tube may be adapted to direct a gas flow away from the outlet port, such as towards the sidewall or top of the canister.

    摘要翻译： 提供了一种用于生成在气相沉积处理系统中使用的化学前体的装置的实施例，其包括具有侧壁，顶部和底部的罐，该罐形成与入口端口和出口端口流体连通的内部容积。 罐包含多个挡板，其从内部容积的底部延伸到上部，并且在入口和出口之间形成延伸的平均流动路径。 在一个实施例中，挡板包含在位于罐底部的预制插入件上。 在一个示例中，入口管可以从入口端口延伸到内部区域中并且基本平行于挡板定位。 入口管的出口端可以适于将气流引导离开出口，例如朝向罐的侧壁或顶部。

    Apparatus and method for hybrid chemical processing
    4.
    发明授权
    Apparatus and method for hybrid chemical processing 有权
    混合化学处理装置和方法

    公开(公告)号：US07402210B2

    公开(公告)日：2008-07-22

    申请号：US11680995

    申请日：2007-03-01

    申请人： Ling Chen ,  Vincent W. Ku ,  Mei Chang ,  Dien-Yeh Wu ,  Hua Chung

    发明人： Ling Chen ,  Vincent W. Ku ,  Mei Chang ,  Dien-Yeh Wu ,  Hua Chung

    IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/34

    CPC分类号： C23C16/45544 ,  C23C16/45502 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/45582 ,  C23C16/54

    摘要： In one embodiment, an apparatus for performing an atomic layer deposition process is provided which includes a chamber body having a substrate support, a lid assembly attached to the chamber body, and delivery sub-assemblies coupled to the lid assembly and configured to deliver process gases into a centralized expanding conduit, which extends through the lid assembly and expands radially outward. The first gas delivery sub-assembly contains an annular mixing channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular mixing channel is adapted to deliver a first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. A first gas inlet may be coupled to the annular mixing channel and positioned to provide the first process gas to the annular mixing channel. The second gas delivery sub-assembly contains a second gas inlet in fluid communication to the centralized expanding conduit.

    摘要翻译： 在一个实施例中，提供了一种用于执行原子层沉积工艺的装置，其包括具有基板支撑件的室主体，附接到室主体的盖组件和联接到盖组件的输送子组件，并且构造成输送工艺气体 进入集中扩展的管道，其延伸穿过盖组件并径向向外扩张。 第一气体输送子组件包含环形混合通道，环形混合通道环绕并与中央膨胀导管流体连通，其中环形混合通道适于将第一工艺气体通过多个通道和喷嘴输送到集中扩展管道中。 第一气体入口可以联接到环形混合通道并且定位成将第一工艺气体提供给环形混合通道。 第二气体输送子组件包含与集中扩张导管流体连通的第二气体入口。

    Method and apparatus for monitoring solid precursor delivery
    6.
    发明授权
    Method and apparatus for monitoring solid precursor delivery 有权

    公开(公告)号：US06772072B2

    公开(公告)日：2004-08-03

    申请号：US10200613

    申请日：2002-07-22

    申请人： Seshadri Ganguli ,  Vincent W. Ku ,  Hua Chung ,  Ling Chen

    发明人： Seshadri Ganguli ,  Vincent W. Ku ,  Hua Chung ,  Ling Chen

    IPC分类号： G06F1900

    CPC分类号： C23C16/52 ,  C23C16/4481

    摘要： A method and apparatus for monitoring the delivery of a solid precursor from a vessel to a process chamber via a process gas produced by flowing a carrier gas into the vessel is provided. The precursor typically changes state from a solid to a gas (vapor) through a sublimation process within the chamber. The apparatus comprises a gas analyzer to generate a first signal indicative of a density of the precursor in the process gas and a controller. The controller receives the first signal and a second signal indicative of a volume flow rate of the process gas or the carrier gas and calculates a mass flow rate and/or a total amount consumed of the precursor based on the first and second signals. The controller may calculate an amount precursor remaining in the vessel based on the total amount consumed and an initial amount. The amount of precursor remaining in the vessel may be used by an operator to efficiently schedule replacement or replenishment of the precursor in an effort to minimize material waste and processing down time.

    Apparatus and method for hybrid chemical processing
    7.
    发明授权
    Apparatus and method for hybrid chemical processing 有权
    混合化学处理装置和方法

    公开(公告)号：US08070879B2

    公开(公告)日：2011-12-06

    申请号：US12544729

    申请日：2009-08-20

    申请人： Ling Chen ,  Vincent W. Ku ,  Mei Chang ,  Dien-Yeh Wu ,  Hua Chung

    发明人： Ling Chen ,  Vincent W. Ku ,  Mei Chang ,  Dien-Yeh Wu ,  Hua Chung

    IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/34

    CPC分类号： C23C16/45544 ,  C23C16/45502 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/45582 ,  C23C16/54

    摘要： In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit.

    摘要翻译： 在一个实施例中，提供了一种用于执行原子层沉积（ALD）工艺的装置，其包括容纳基板支撑件的室主体，附接到室主体的盖组件，与反应流体连通的远程等离子体系统（RPS） 区域，延伸穿过盖组件并径向向外扩张的集中扩展管道，构造成输送第一工艺气体的第一气体输送子组件和构造成将第二工艺气体输送到集中扩展中的第二气体输送子组件 导管。 第一气体输送子组件包含环形通道，环形通道与中央膨胀管道流体连通，其中环形通道适于将第一工艺气体通过多个通道和喷嘴输送到集中扩展管道中。 第二气体输送子组件包含与集中扩张导管流体连通的气体入口。

    Apparatus and method for hybrid chemical processing
    9.
    发明授权
    Apparatus and method for hybrid chemical processing 有权
    混合化学处理装置和方法

    公开(公告)号：US07204886B2

    公开(公告)日：2007-04-17

    申请号：US10712690

    申请日：2003-11-13

    申请人： Ling Chen ,  Vincent W. Ku ,  Mei Chang ,  Dien-Yeh Wu ,  Hua Chung

    发明人： Ling Chen ,  Vincent W. Ku ,  Mei Chang ,  Dien-Yeh Wu ,  Hua Chung

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06

    CPC分类号： C23C16/45544 ,  C23C16/45502 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/45582 ,  C23C16/54

    摘要： A method and apparatus for performing multiple deposition processes is provided. In one embodiment, the apparatus includes a chamber body and a gas distribution assembly disposed on the chamber body. In one embodiment, the method comprises positioning a substrate surface to be processed within a chamber body, delivering two or more compounds into the chamber body utilizing a gas distribution assembly disposed on the chamber body to deposit a film comprising a first material, and then delivering two or more compounds into the chamber body utilizing a gas distribution assembly disposed on the chamber body to deposit a film comprising a second material. In one aspect of these embodiments, the gas distribution assembly includes a gas conduit in fluid communication with the chamber body, two or more isolated gas inlets equipped with one or more high speed actuating valves in fluid communication with the gas conduit, and a mixing channel in fluid communication with the gas conduit. The valves are adapted to alternately pulse one or more compounds into the gas conduit, and the mixing channel is adapted to deliver a continuous flow of one or more compounds into the gas conduit.

    摘要翻译： 提供了一种用于执行多个沉积工艺的方法和装置。 在一个实施例中，该装置包括室主体和设置在室主体上的气体分配组件。 在一个实施例中，该方法包括将待处理的衬底表面定位在室主体内，使用设置在室主体上的气体分布组件将两个或更多个化合物输送到室主体中以沉积包含第一材料的膜，然后输送 使用设置在室主体上的气体分配组件将两种或更多种化合物进入室体，以沉积包含第二材料的膜。 在这些实施例的一个方面，气体分配组件包括与腔室主体流体连通的气体导管，配备有一个或多个与气体导管流体连通的高速致动阀的隔离气体入口，以及混合通道 与气体管道流体连通。 这些阀适于交替地将一种或多种化合物脉动地输送到气体导管中，并且混合通道适于将一种或多种化合物的连续流输送到气体导管中。