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公开(公告)号:US20090209028A1
公开(公告)日:2009-08-20
申请号:US12346950
申请日:2008-12-31
申请人: Huang Yi Dong , Rao Yi , Liu Fang , Zhang Wei , Peng Jiang De , Dai Ohnishi , Daisuke Niwa , Atsushi Tazuke , Yoshikatsu Miura
发明人: Huang Yi Dong , Rao Yi , Liu Fang , Zhang Wei , Peng Jiang De , Dai Ohnishi , Daisuke Niwa , Atsushi Tazuke , Yoshikatsu Miura
CPC分类号: G01N21/553 , G01N21/41 , G01N21/7703
摘要: There is provided a sensing chip capable of measuring a refractive index by utilizing a long-range surface plasmon polariton, accurately measuring an accumulative refractive index in a wide range, and more easily enabling sealing for measurement. The present invention relates to the sensing chip which has a thin metal film or a strip-like metal grown on an underlayer, and has a dielectric that limits a refractive index and a dielectric buffer layer on an upper surface and a lower surface of the thin metal film or the strip-like metal. The dielectric buffer layer is attached onto the thin metal film or the strip-like metal. The thin metal film or the strip-like metal and the buffer layer are sandwiched between two dielectric layers. A hole is made in a surface of the upper dielectric layer to serve as a measurement groove.
摘要翻译: 提供了一种能够通过利用远程表面等离子体激元测量折射率的感测芯片,精确地测量宽范围内的累积折射率,并且更容易实现测量密封。 本发明涉及一种感测芯片,其具有在底层上生长的薄金属膜或带状金属,并且具有限制薄膜的上表面和下表面上的折射率和介电缓冲层的电介质 金属膜或带状金属。 介电缓冲层附着在薄金属膜或带状金属上。 金属薄膜或带状金属和缓冲层夹在两个电介质层之间。 在上部电介质层的表面形成孔作为测量槽。
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公开(公告)号:US08048385B2
公开(公告)日:2011-11-01
申请号:US12346950
申请日:2008-12-31
申请人: Huang Yi Dong , Rao Yi , Liu Fang , Zhang Wei , Peng Jiang De , Dai Ohnishi , Daisuke Niwa , Atsushi Tazuke , Yoshikatsu Miura
发明人: Huang Yi Dong , Rao Yi , Liu Fang , Zhang Wei , Peng Jiang De , Dai Ohnishi , Daisuke Niwa , Atsushi Tazuke , Yoshikatsu Miura
IPC分类号: G01N21/75
CPC分类号: G01N21/553 , G01N21/41 , G01N21/7703
摘要: There is provided a sensing chip capable of measuring a refractive index by utilizing a long-range surface plasmon polariton, accurately measuring an accumulative refractive index in a wide range, and more easily enabling sealing for measurement. The present invention relates to the sensing chip which has a thin metal film or a strip-like metal grown on an underlayer, and has a dielectric that limits a refractive index and a dielectric buffer layer on an upper surface and a lower surface of the thin metal film or the strip-like metal. The dielectric buffer layer is attached onto the thin metal film or the strip-like metal. The thin metal film or the strip-like metal and the buffer layer are sandwiched between two dielectric layers. A hole is made in a surface of the upper dielectric layer to serve as a measurement groove.
摘要翻译: 提供了一种能够通过利用远程表面等离子体激元测量折射率的感测芯片,精确地测量宽范围内的累积折射率,并且更容易实现测量密封。 本发明涉及一种感测芯片,其具有在底层上生长的薄金属膜或带状金属,并且具有限制薄膜的上表面和下表面上的折射率和介电缓冲层的电介质 金属膜或带状金属。 介电缓冲层附着在薄金属膜或带状金属上。 金属薄膜或带状金属和缓冲层夹在两个电介质层之间。 在上部电介质层的表面形成孔作为测量槽。
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