公开(公告)号：US08207043B2

公开(公告)日：2012-06-26

申请号：US12568657

申请日：2009-09-28

申请人： Huang-Yi Lin ,  Jiun-Hung Shen ,  Chi-Horn Pai ,  Yi-Chung Sheng ,  Shih-Chieh Hsu

发明人： Huang-Yi Lin ,  Jiun-Hung Shen ,  Chi-Horn Pai ,  Yi-Chung Sheng ,  Shih-Chieh Hsu

IPC分类号： H01L21/336

CPC分类号： H01L29/78 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7847

摘要： A method for making a semiconductor MOS device is provided. A gate structure is formed on a substrate. A source and a drain are formed in the substrate on both sides of the gate structure. The substrate is then subjected to a pre-amorphization implant (PAI) process. A transitional stress layer is then formed on the substrate. Thereafter, a laser anneal with a first temperature is performed. After the laser anneal, a rapid thermal process is performed with a second temperature that is lower than the first temperature. Subsequently, the transitional stress layer is removed.

摘要翻译： 提供了制造半导体MOS器件的方法。 在基板上形成栅极结构。 源极和漏极形成在栅极结构两侧的衬底中。 然后将基材进行预非晶化植入（PAI）工艺。 然后在衬底上形成过渡应力层。 此后，进行具有第一温度的激光退火。 在激光退火之后，以低于第一温度的第二温度进行快速热处理。 随后，去除过渡应力层。

公开(公告)号：US20110076823A1

公开(公告)日：2011-03-31

申请号：US12568657

申请日：2009-09-28

申请人： Huang-Yi Lin ,  Jiun-Hung Shen ,  Chi-Horn Pai ,  Yi-Chung Sheng ,  Shih-Chieh Hsu

发明人： Huang-Yi Lin ,  Jiun-Hung Shen ,  Chi-Horn Pai ,  Yi-Chung Sheng ,  Shih-Chieh Hsu

IPC分类号： H01L21/336

CPC分类号： H01L29/78 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7847

摘要： A method for making a semiconductor MOS device is provided. A gate structure is formed on a substrate. A source and a drain are formed in the substrate on both sides of the gate structure. The substrate is then subjected to a pre-amorphization implant (PAI) process. A transitional stress layer is then formed on the substrate. Thereafter, a laser anneal with a first temperature is performed. After the laser anneal, a rapid thermal process is performed with a second temperature that is lower than the first temperature. Subsequently, the transitional stress layer is removed.

摘要翻译： 提供了制造半导体MOS器件的方法。 在基板上形成栅极结构。 源极和漏极形成在栅极结构两侧的衬底中。 然后将基材进行预非晶化植入（PAI）工艺。 然后在衬底上形成过渡应力层。 此后，进行具有第一温度的激光退火。 在激光退火之后，以低于第一温度的第二温度进行快速热处理。 随后，去除过渡应力层。