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    BACILLUS SUBTILIS HA PRODUCING FIBRINOLYTIC ENZYME AND MUCILAGE HIGHLY, METHOD OF PREPARING FERMENTED SOYBEANS USING THE SAME STRAIN, AND SOYBEANS PREPARED BY THE METHOD
    3.
    发明申请
    BACILLUS SUBTILIS HA PRODUCING FIBRINOLYTIC ENZYME AND MUCILAGE HIGHLY, METHOD OF PREPARING FERMENTED SOYBEANS USING THE SAME STRAIN, AND SOYBEANS PREPARED BY THE METHOD 审中-公开
    生产纤维蛋白酶和高效制备芽孢杆菌的芽孢杆菌，使用相同菌株制备发芽大豆的方法，以及由该方法制备的大豆

    公开(公告)号：US20110111092A1

    公开(公告)日：2011-05-12

    申请号：US12515654

    申请日：2007-02-27

    申请人： Sam Pin Lee ,  Ji-Hyun Seo ,  In Seon Lee

    发明人： Sam Pin Lee ,  Ji-Hyun Seo ,  In Seon Lee

    IPC分类号： A23L1/20 ,  C12N1/20

    CPC分类号： C12R1/125 ,  A23L11/09 ,  A23L11/33

    摘要： The present invention provides Bacillus subtilis HA KCCM-10775P having a high productivity of protease, fibrinolytic enzyme and mucilage, a method preparing fermented soybeans (e.g., Cheonggukjang) using the same strain, in which bean fragments, soybeans and black soybeans are fermented, and fermented soybeans (e.g., Cheonggukjang) produced according to the said method. The Bacillus subtilis HA KCCM-10775P isolated from traditional fermented soybeans (e.g., Cheonggukjang) and identified is the superior strain having a high productivity of protease, fibrinolytic enzyme and mucilage. When preparing fermented soybeans (e.g., Cheonggukjang) using the strain of the present invention, it has good sensory properties by removing a peculiar smell thereof, as well as a high productivity of fibrinolytic enzyme and mucilage.

    摘要翻译： 本发明提供了具有高蛋白酶，纤维蛋白溶解酶和粘液生产力的枯草芽孢杆菌HAKCCM-10775P，使用相同菌株制备发酵大豆（例如Cheonggukjang）的方法，其中豆芽碎片，大豆和黑大豆被发酵，以及 按照上述方法生产的发酵大豆（例如Cheonggukjang）。 从传统发酵大豆（例如Cheonggukjang）分离的枯草芽孢杆菌HA KCCM-10775P，鉴定出具有高蛋白酶，纤维蛋白溶解酶和粘液生产力的优良菌株。 当使用本发明的菌株制备发酵大豆（例如Cheonggukjang）时，通过除去其特有的气味以及纤维蛋白溶解酶和粘液的高生产率具有良好的感官特性。

    Program method of nonvolatile memory device
    4.
    发明授权
    Program method of nonvolatile memory device 有权
    非易失性存储器件的编程方法

    公开(公告)号：US08520438B2

    公开(公告)日：2013-08-27

    申请号：US13238731

    申请日：2011-09-21

    申请人： Ji-Hyun Seo ,  Byong-Kook Kim ,  Sung-Jae Chung

    发明人： Ji-Hyun Seo ,  Byong-Kook Kim ,  Sung-Jae Chung

    IPC分类号： G11C11/34

    CPC分类号： G11C16/10 ,  G11C16/0483

    摘要： A program method of a nonvolatile memory device includes applying a program voltage to a selected word line, applying a first pass voltage to at least one word line adjacent to the selected word line, applying at least one first middle voltage lower than the first pass voltage but higher than an isolation voltage to at least one word line adjacent to the word line receiving the first pass voltage, applying the isolation voltage to a word line adjacent to the word line receiving the first middle voltage, applying at least one second middle voltage higher than the isolation voltage but lower than a second pass voltage to at least one word line adjacent to the word line receiving the isolation voltage, and applying a second pass voltage to at least one word line adjacent to the word line receiving the second middle voltage.

    摘要翻译： 一种非易失性存储装置的编程方法包括对所选择的字线施加编程电压，向与所选字线相邻的至少一个字线施加第一通过电压，施加低于第一通过电压的至少一个第一中间电压 但是高于与接收第一通过电压的字线相邻的至少一个字线的隔离电压，将隔离电压施加到与接收第一中间电压的字线相邻的字线，施加至少一个第二中间电压 比对接收到隔离电压的字线相邻的至少一个字线低的第二通过电压，但是对接收到第二中间电压的字线的至少一个字线施加第二通过电压。