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公开(公告)号:US09646687B2
公开(公告)日:2017-05-09
申请号:US14619992
申请日:2015-02-11
申请人: Hyo-Jin Kwon , Yeong-Taek Lee , Dae-Seok Byeon , Yong-Kyu Lee , Hyun-Kook Park
发明人: Hyo-Jin Kwon , Yeong-Taek Lee , Dae-Seok Byeon , Yong-Kyu Lee , Hyun-Kook Park
CPC分类号: G11C13/0033 , G06F11/073 , G06F11/0751 , G06F11/0793 , G06F11/1048 , G11C13/0035 , G11C13/0069 , G11C29/52 , G11C2013/0092 , G11C2213/77
摘要: Provided are a resistive memory device and an operating method for the resistive memory device. The operating method includes detecting a write cycle, determining whether or not to perform a recovery operation by comparing the detected write cycle with a first reference value, and upon determining to perform the recovery operation, performing the recovery operation on target memory cells of the memory cell array.