WAVELENGTH DIVISION MULTIPLEXED-PASSIVE OPTICAL NETWORK APPARATUS
    1.
    发明申请
    WAVELENGTH DIVISION MULTIPLEXED-PASSIVE OPTICAL NETWORK APPARATUS 审中-公开
    波长部分多路无源光网络设备

    公开(公告)号:US20100316383A1

    公开(公告)日:2010-12-16

    申请号:US12582211

    申请日:2009-10-20

    IPC分类号: H04J14/02

    CPC分类号: H04J14/0282

    摘要: Provided is a wavelength division multiplexed-passive optical network (WDM-PON) apparatus. The WDM-PON includes an optical source unit, an optical mux, and a chirped Bragg grating. The optical source unit generates an optical signal. The optical mux receives the optical signal from the optical source unit through one end of the optical mux, multiplexes the optical signal, and outputs the multiplexed optical signal. The chirped Bragg grating is connected to the other end of the optical mux. The chirped Bragg grating again reflects the optical signal having passed the optical mux to re-input a certain portion of the optical signal into the optical mux and the optical source unit. The optical mux performs a spectrum slicing on the re-inputted optical signal and operates the optical source unit using a channel wavelength of the optical mux as a main oscillation wavelength.

    摘要翻译: 提供了一种波分复用无源光网络(WDM-PON)装置。 WDM-PON包括光源单元,光复用器和啁啾布拉格光栅。 光源单元产生光信号。 光复用器通过光复用器的一端从光源单元接收光信号,复用光信号,并输出复用的光信号。 啁啾布拉格光栅连接到光复用器的另一端。 啁啾布拉格光栅再次反射已经通过光复用器的光信号,以将光信号的某一部分重新输入光复用器和光源单元。 光复用器对重新输入的光信号执行频谱分片,并使用光复用器的信道波长作为主振荡波长来操作光源单元。

    OPTICAL AMPLIFIER
    2.
    发明申请
    OPTICAL AMPLIFIER 有权
    光放大器

    公开(公告)号:US20100158427A1

    公开(公告)日:2010-06-24

    申请号:US12640627

    申请日:2009-12-17

    IPC分类号: G02F1/035

    摘要: An optical amplifier includes a passive waveguide region and an active waveguide region. The passive waveguide region is configured to receive an incident optical signal and adjust a mode of the optical signal. The active waveguide region is integrated to the passive waveguide region and configured to perform gain modulation on the optical signal received from the passive waveguide region by changing density of carriers in response to a current applied to the active waveguide region. Internal loss of the active waveguide region is adjusted to produce a resonance effect and thereby to increase bandwidth of the active waveguide. Therefore, the optical amplifier can have a wide bandwidth under a low-current condition.

    摘要翻译: 光放大器包括无源波导区域和有源波导区域。 无源波导区域被配置为接收入射光信号并调整光信号的模式。 有源波导区域被集成到无源波导区域,并被配置为响应于施加到有源波导区域的电流改变载波的密度,对从无源波导区域接收的光信号执行增益调制。 有源波导区域的内部损耗被调节以产生共振效应,从而增加有源波导的带宽。 因此,光放大器可以在低电流条件下具有宽带宽。

    WAVELENGTH TUNABLE EXTERNAL CAVITY LASER GENERATING DEVICE
    4.
    发明申请
    WAVELENGTH TUNABLE EXTERNAL CAVITY LASER GENERATING DEVICE 有权
    波长管外部腔体激光发生装置

    公开(公告)号:US20120093178A1

    公开(公告)日:2012-04-19

    申请号:US13016238

    申请日:2011-01-28

    IPC分类号: H01S3/10

    摘要: Provided is a wavelength tunable external cavity laser generating device. The wavelength tunable external cavity laser generating devices includes: an optical amplifier, a comb reflector, and an optical signal processor connected in series on a first substrate; and an external wavelength tunable reflector disposed on a second substrate adjacent to the first substrate and connected to the optical amplifier, wherein the comb reflector includes: a waveguide disposed on the first substrate; a first diffraction grating disposed at one end of the waveguide adjacent to the optical amplifier; and a second diffraction grating disposed at the other end of the waveguide adjacent to the optical signal processor, wherein the optical amplifier, the comb reflector, and the optical signal processor constitute a continuous waveguide.

    摘要翻译: 提供了一种波长可调外腔激光产生装置。 所述波长可调外腔激光产生装置包括:串联在第一基板上的光放大器,梳状反射器和光信号处理器; 以及外部波长可调谐反射器,其设置在与所述第一基板相邻并且连接到所述光学放大器的第二基板上,其中所述梳状反射器包括:布置在所述第一基板上的波导; 设置在与光放大器相邻的波导的一端的第一衍射光栅; 以及第二衍射光栅,其设置在与所述光信号处理器相邻的所述波导的另一端处,其中所述光放大器,所述梳状反射器和所述光信号处理器构成连续波导。

    WAVELENGTH-TUNABLE EXTERNAL CAVITY LASER GENERATING DEVICE
    5.
    发明申请
    WAVELENGTH-TUNABLE EXTERNAL CAVITY LASER GENERATING DEVICE 审中-公开
    波长可控外部空腔激光发生装置

    公开(公告)号:US20120106578A1

    公开(公告)日:2012-05-03

    申请号:US13241529

    申请日:2011-09-23

    IPC分类号: H01S3/10

    摘要: A wavelength-tunable external cavity laser generating device is provided. The wavelength-tunable external cavity laser generating device includes a reflection-type multi-mode interferometer, an optical amplifier disposed between the reflection-type multi-mode interferometer and an external wavelength-tunable reflector to amplify light, and an optical signal processor configured to process light from the reflection-type multi-mode interferometer. The reflection-type multi-mode interferometer includes a multi-mode waveguide, an input waveguide connecting the optical amplifier and one end of the multi-mode waveguide, and an output waveguide configured to connect the optical signal processor and the other end of the multi-mode waveguide.

    摘要翻译: 提供了一种波长可调谐的外腔激光产生装置。 波长可调谐外腔激光发生装置包括反射型多模干涉仪,设置在反射型多模干涉仪和外部波长可调反射体之间以放大光的光放大器;以及光信号处理器, 来自反射型多模干涉仪的处理光。 反射型多模干涉仪包括多模波导,连接光放大器和多模波导的一端的输入波导,以及输出波导,其被配置为连接光信号处理器和多光波导的另一端 模式波导。

    MULTI-CHANNEL RECEIVER OPTICAL SUB ASSEMBLY
    6.
    发明申请
    MULTI-CHANNEL RECEIVER OPTICAL SUB ASSEMBLY 有权
    多通道接收机光电子总成

    公开(公告)号:US20150063832A1

    公开(公告)日:2015-03-05

    申请号:US14012384

    申请日:2013-08-28

    IPC分类号: H04B10/60 H04J14/02

    摘要: Disclosed is a multi-channel receiver optical sub assembly. The a multi-channel receiver optical sub assembly includes: a multi-channel PD array, in which a plurality of photodiodes (PDs) disposed on a first capacitor, and including receiving areas disposed at centers thereof and anode electrode pads arranged in an opposite direction at an angle of 180 degrees based on the receiving areas between the adjacent PDs is monolithically integrated; a plurality of transimpedance amplifiers (TIAs) arranged on a plurality of second capacitors, respectively, and connected with the anode pads of the respective PDs through wire bonding; a submount on which the first capacitor.

    摘要翻译: 公开了一种多通道接收机光学子组件。 多通道接收机光学子组件包括:多通道PD阵列,其中设置在第一电容器上的多个光电二极管(PD),并且包括设置在其中心处的接收区域和布置在相反方向的阳极电极焊盘 基于相邻PD之间的接收区域以180度的角度被整体地集成; 分别布置在多个第二电容器上并通过引线接合与相应PD的阳极焊盘连接的多个跨阻抗放大器(TIA); 第一电容器的基座。

    OPTICAL WAVEGUIDE PLATFORM WITH HYBRID-INTEGRATED OPTICAL TRANSMISSION DEVICE AND OPTICAL ACTIVE DEVICE AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    OPTICAL WAVEGUIDE PLATFORM WITH HYBRID-INTEGRATED OPTICAL TRANSMISSION DEVICE AND OPTICAL ACTIVE DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    具有混合光学传输装置的光波导平台和光学有源装置及其制造方法

    公开(公告)号:US20130163916A1

    公开(公告)日:2013-06-27

    申请号:US13487807

    申请日:2012-06-04

    IPC分类号: G02B6/12 H01L21/02

    摘要: Disclosed are an optical waveguide platform with integrated active transmission device and monitoring photodiode. The optical waveguide platform with hybrid integrated optical transmission device and optical active device includes an optical waveguide region formed by stacking a lower cladding layer, a core layer and an upper cladding layer on a substrate; a trench region formed by etching a portion of the optical waveguide region; and a spot expanding region formed on the core layer in the optical waveguide region, in which the optical transmission device is mounted in the trench region and the optical active device is flip-chip bonded to the spot expanding region. The monitoring photodiode is flip-chip bonded to the spot expanding region of the core layer of the optical waveguide, thereby monitoring output light including an optical coupling loss that occurs during flip-chip bonding.

    摘要翻译: 公开了一种具有集成主动传输装置和监测光电二极管的光波导平台。 具有混合集成光传输装置和光学有源装置的光波导平台包括通过在基板上层叠下包层,芯层和上包层而形成的光波导区域; 通过蚀刻光波导区域的一部分形成的沟槽区域; 以及形成在光波导区域的芯层上的点扩展区域,其中光传输装置安装在沟槽区域中,并且光学有源器件被倒装芯片接合到点扩展区域。 监视光电二极管被倒装芯片接合到光波导的芯层的点扩展区域,从而监视包括在倒装芯片接合期间发生的光耦合损耗的输出光。

    MEDIA DEPOSIT APPARATUS AND METHOD FOR CONTROLLING THE SAME
    8.
    发明申请
    MEDIA DEPOSIT APPARATUS AND METHOD FOR CONTROLLING THE SAME 有权
    介质沉积装置及其控制方法

    公开(公告)号:US20090216365A1

    公开(公告)日:2009-08-27

    申请号:US12392801

    申请日:2009-02-25

    IPC分类号: B65H5/26 G06F17/00

    摘要: Provided is a media deposit apparatus including: a deposit transfer portion providing a deposit circulation path of media deposited via a media deposit portion; a temporary transfer portion providing a temporary circulation path that contacts with the deposit circulation path to transfer the media to a temporary stack portion, and including a temporary stack gate, provided between the deposit circulation path and the temporary circulation path, to selectively convert a path of media to the temporary circulation path; and a media transfer portion providing a media transfer path that contacts with the temporary circulation path to transfer the media to a media storage portion, and including a media storage gate, provided between the temporary circulation path and the media transfer path, to selectively convert the path of media to the media transfer path. Accordingly, it is possible to simplify a media transfer structure and to enhance a media transfer efficiency.

    摘要翻译: 提供了一种介质沉积设备,包括:沉积物转移部分,其提供通过介质沉积部分沉积的介质的沉积物循环路径; 临时转移部分,提供临时循环路径,其与沉积物循环路径接触以将介质转移到临时堆叠部分,并且包括设置在沉积物循环路径和临时循环路径之间的临时堆叠门,以选择性地将路径 的媒体到临时流通路线; 以及介质传送部分,其提供与临时循环路径接触以将介质传送到介质存储部分的介质传送路径,并且包括设置在临时循环路径和介质传送路径之间的介质存储门,以选择性地将 媒体路径到媒体传输路径。 因此,可以简化介质传送结构并提高介质传送效率。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
    半导体发光器件及其制造方法

    公开(公告)号:US20090085043A1

    公开(公告)日:2009-04-02

    申请号:US12210472

    申请日:2008-09-15

    IPC分类号: H01L33/00

    CPC分类号: H01L33/40 H01L33/32

    摘要: Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.

    摘要翻译: 公开了一种半导体发光器件,其能够提高半导体发光器件的特性,例如正向电压特性和导通电压特性,通过降低输入电压来提高发光效率,并提高半导体发光器件的可靠性 器件的低压工作及其制造方法。 半导体发光器件包括:n型GaN半导体层; 形成在所述n型GaN半导体层的镓面上的有源层; 形成在有源层上的p型半导体层; 以及形成在n型GaN半导体层的氮面上并包含镧(La) - 镍(Ni)合金的n型电极。