摘要:
Provided is a wavelength division multiplexed-passive optical network (WDM-PON) apparatus. The WDM-PON includes an optical source unit, an optical mux, and a chirped Bragg grating. The optical source unit generates an optical signal. The optical mux receives the optical signal from the optical source unit through one end of the optical mux, multiplexes the optical signal, and outputs the multiplexed optical signal. The chirped Bragg grating is connected to the other end of the optical mux. The chirped Bragg grating again reflects the optical signal having passed the optical mux to re-input a certain portion of the optical signal into the optical mux and the optical source unit. The optical mux performs a spectrum slicing on the re-inputted optical signal and operates the optical source unit using a channel wavelength of the optical mux as a main oscillation wavelength.
摘要:
An optical amplifier includes a passive waveguide region and an active waveguide region. The passive waveguide region is configured to receive an incident optical signal and adjust a mode of the optical signal. The active waveguide region is integrated to the passive waveguide region and configured to perform gain modulation on the optical signal received from the passive waveguide region by changing density of carriers in response to a current applied to the active waveguide region. Internal loss of the active waveguide region is adjusted to produce a resonance effect and thereby to increase bandwidth of the active waveguide. Therefore, the optical amplifier can have a wide bandwidth under a low-current condition.
摘要:
Provided are a semiconductor optical amplifier and an optical signal processing method using the same. The reflective semiconductor optical amplifier includes: an optical signal amplification region operating to allow a downward optical signal incident from the external to obtain a gain; and an optical signal modulation region connected to the optical signal amplification region and generating a modulated optical signal. The downward optical signal is amplified through a cross gain modulation using the modulated optical signal and is outputted as an upward optical signal.
摘要:
Provided is a wavelength tunable external cavity laser generating device. The wavelength tunable external cavity laser generating devices includes: an optical amplifier, a comb reflector, and an optical signal processor connected in series on a first substrate; and an external wavelength tunable reflector disposed on a second substrate adjacent to the first substrate and connected to the optical amplifier, wherein the comb reflector includes: a waveguide disposed on the first substrate; a first diffraction grating disposed at one end of the waveguide adjacent to the optical amplifier; and a second diffraction grating disposed at the other end of the waveguide adjacent to the optical signal processor, wherein the optical amplifier, the comb reflector, and the optical signal processor constitute a continuous waveguide.
摘要:
A wavelength-tunable external cavity laser generating device is provided. The wavelength-tunable external cavity laser generating device includes a reflection-type multi-mode interferometer, an optical amplifier disposed between the reflection-type multi-mode interferometer and an external wavelength-tunable reflector to amplify light, and an optical signal processor configured to process light from the reflection-type multi-mode interferometer. The reflection-type multi-mode interferometer includes a multi-mode waveguide, an input waveguide connecting the optical amplifier and one end of the multi-mode waveguide, and an output waveguide configured to connect the optical signal processor and the other end of the multi-mode waveguide.
摘要:
Disclosed is a multi-channel receiver optical sub assembly. The a multi-channel receiver optical sub assembly includes: a multi-channel PD array, in which a plurality of photodiodes (PDs) disposed on a first capacitor, and including receiving areas disposed at centers thereof and anode electrode pads arranged in an opposite direction at an angle of 180 degrees based on the receiving areas between the adjacent PDs is monolithically integrated; a plurality of transimpedance amplifiers (TIAs) arranged on a plurality of second capacitors, respectively, and connected with the anode pads of the respective PDs through wire bonding; a submount on which the first capacitor.
摘要:
Disclosed are an optical waveguide platform with integrated active transmission device and monitoring photodiode. The optical waveguide platform with hybrid integrated optical transmission device and optical active device includes an optical waveguide region formed by stacking a lower cladding layer, a core layer and an upper cladding layer on a substrate; a trench region formed by etching a portion of the optical waveguide region; and a spot expanding region formed on the core layer in the optical waveguide region, in which the optical transmission device is mounted in the trench region and the optical active device is flip-chip bonded to the spot expanding region. The monitoring photodiode is flip-chip bonded to the spot expanding region of the core layer of the optical waveguide, thereby monitoring output light including an optical coupling loss that occurs during flip-chip bonding.
摘要:
Provided is a media deposit apparatus including: a deposit transfer portion providing a deposit circulation path of media deposited via a media deposit portion; a temporary transfer portion providing a temporary circulation path that contacts with the deposit circulation path to transfer the media to a temporary stack portion, and including a temporary stack gate, provided between the deposit circulation path and the temporary circulation path, to selectively convert a path of media to the temporary circulation path; and a media transfer portion providing a media transfer path that contacts with the temporary circulation path to transfer the media to a media storage portion, and including a media storage gate, provided between the temporary circulation path and the media transfer path, to selectively convert the path of media to the media transfer path. Accordingly, it is possible to simplify a media transfer structure and to enhance a media transfer efficiency.
摘要:
Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.
摘要:
A method and an apparatus for controlling access to an Access Point AP in a mobile terminal are provided. The method includes storing information of an AP as profile information, determining whether profile information of an accessed AP is stored in the mobile terminal when the mobile terminal accesses the AP, and logging in to the accessed AP based on the stored profile information.