公开(公告)号：US20060039190A1

公开(公告)日：2006-02-23

申请号：US11097495

申请日：2005-04-01

申请人： Hyun-Jo Kim ,  Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Young-Ki Ha ,  Kyung-Tae Nam

发明人： Hyun-Jo Kim ,  Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Young-Ki Ha ,  Kyung-Tae Nam

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A method of writing to magnetic random access memory (MRAM) devices is provided. The method includes preparing a digit line disposed on a semiconductor substrate, a bit line crossing over the digit line, and a magnetic tunnel junction (MTJ) interposed between the digit line and the bit line. The MTJ has a pinned layer, a tunneling insulating layer, and a synthetic anti-ferromagnetic (SAF) free layer which are sequentially stacked. In addition, the SAF free layer has a bottom free layer and a top free layer which are separated by an exchange spacer layer. An initial magnetization state of the MTJ is read and compared with a desired magnetization state. When the initial magnetization state is different from the desired magnetization state, a first write line pulse is applied to one of the digit line and the bit line, and a second write line pulse is applied to the other of the digit line and the bit line, thereby changing the magnetization state of the MTJ. The MTJ may be disposed at an angle equal to or greater than 0° and less than 90° to a line to which the second write line pulse is applied.

摘要翻译： 提供了一种写入磁性随机存取存储器（MRAM）器件的方法。 该方法包括准备设置在半导体衬底上的数字线，与数字线交叉的位线以及置于数字线和位线之间的磁性隧道结（MTJ）。 MTJ具有钉扎层，隧道绝缘层和顺序层叠的合成反铁磁（SAF）层。 此外，SAF自由层具有由交换间隔层隔开的无底层和顶部自由层。 读取MTJ的初始磁化状态并与期望的磁化状态进行比较。 当初始磁化状态不同于期望的磁化状态时，第一写入线脉冲被施加到数字线和位线之一，并且第二写入线脉冲被施加到数字线和位线中的另一个 ，从而改变MTJ的磁化状态。 MTJ可以以与第二写入线脉冲施加的线等于或大于0°且小于90°的角度布置。

公开(公告)号：US07582890B2

公开(公告)日：2009-09-01

申请号：US11103078

申请日：2005-04-11

申请人： Young-Ki Ha ,  Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Kyung-Tae Nam

发明人： Young-Ki Ha ,  Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Kyung-Tae Nam

IPC分类号： H01L27/20

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08

摘要： Provided are magnetic tunnel junction structures having bended tips at both ends thereof, magnetic RAM cells employing the same and photo masks used in formation thereof. The magnetic tunnel junction structures have a pinned layer pattern, a tunneling insulation layer pattern and a free layer pattern, which are stacked on an integrated circuit substrate. At least the free layer pattern has a main body as well as first and second bended tips each protruded from both ends of the main body when viewed from a plan view.

摘要翻译： 提供了在其两端具有弯曲尖端的磁性隧道结结构，使用其的磁性RAM单元和其形成中使用的光掩模。 磁性隧道结结构具有钉扎层图案，隧道绝缘层图案和自由层图案，其堆叠在集成电路基板上。 至少自由层图案具有主体以及当从俯视图观察时各自从主体的两端突出的第一和第二弯曲末端。

公开(公告)号：US07372090B2

公开(公告)日：2008-05-13

申请号：US11347280

申请日：2006-02-06

申请人： Se-Chung Oh ,  Jang-Eun Lee ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Kyung-Tae Nam ,  Young-Ki Ha

发明人： Se-Chung Oh ,  Jang-Eun Lee ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Kyung-Tae Nam ,  Young-Ki Ha

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： G11C11/16 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49034 ,  Y10T29/49044

摘要： Example embodiments of the present invention disclose a semiconductor memory device and a method of forming a memory device. A semiconductor memory device may include a digit line disposed on a substrate, an intermediate insulating layer covering the digit line, a magnetic tunnel junction (MTJ) pattern disposed on the intermediate insulating layer and over the digit line, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., and a bit line connected to the capping pattern and disposed to intersect the digit line. A method of forming a semiconductor memory device may include forming a digit line on a substrate, forming an intermediate insulating layer covering the digit line, forming a magnetic tunnel junction (MTJ) pattern on the intermediate insulating layer, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., performing an annealing operation at a temperature of about 350° C. or higher, and forming a bit line connected to the capping pattern and disposed to intersect the digit line.

摘要翻译： 本发明的示例性实施例公开了半导体存储器件和形成存储器件的方法。 半导体存储器件可以包括设置在衬底上的数字线，覆盖数字线的中间绝缘层，设置在中间绝缘层上方和数字线上的磁性隧道结（MTJ）图案，MTJ图案包括顺序堆叠 下磁性图案，上磁性图案和封盖图案，其中封盖图案在高于约280℃的温度下不与上磁性图案反应，而位线连接到封盖图案并且设置成与数字线相交 。 形成半导体存储器件的方法可以包括在衬底上形成数字线，形成覆盖数字线的中间绝缘层，在中间绝缘层上形成磁隧道结（MTJ）图案，MTJ图案包括顺序层叠的 较低的磁性图案，上部磁性图案和封盖图案，其中封盖图案在高于约280℃的温度下不与上部磁性图案反应，在约350℃或更高的温度下进行退火操作， 并且形成连接到所述封盖图案并且设置成与所述数字线相交的位线。

公开(公告)号：US20060027846A1

公开(公告)日：2006-02-09

申请号：US11145478

申请日：2005-06-03

申请人： Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Young-Ki Ha ,  Kyung-Tae Nam

发明人： Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Young-Ki Ha ,  Kyung-Tae Nam

IPC分类号： H01L29/94

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/161

摘要： A magnetic random access memory device may include a semiconductor substrate, a magnetic tunnel junction (MTJ) structure, a contact plug, and a digit line. More particularly, the MTJ structure may be on the semiconductor substrate, and the digit line may be adjacent the magnetic tunnel junction structure. In addition, the contact plug may provide electrical connection between the magnetic tunnel junction structure and the semiconductor substrate, and the contact plug may be between the magnetic tunnel junction structure and the semiconductor substrate. Related methods are also discussed.

摘要翻译： 磁性随机存取存储器件可以包括半导体衬底，磁性隧道结（MTJ）结构，接触插塞和数字线。 更具体地，MTJ结构可以在半导体衬底上，并且数字线可以与磁性隧道结结构相邻。 此外，接触插头可以在磁性隧道结结构和半导体衬底之间提供电连接，并且接触插塞可以在磁性隧道结结构和半导体衬底之间。 还讨论了相关方法。

公开(公告)号：US07645619B2

公开(公告)日：2010-01-12

申请号：US12073098

申请日：2008-02-29

申请人： Se-Chung Oh ,  Jang-Eun Lee ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Kyung-Tae Nam ,  Young-Ki Ha

发明人： Se-Chung Oh ,  Jang-Eun Lee ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Kyung-Tae Nam ,  Young-Ki Ha

IPC分类号： H01L21/00

CPC分类号： G11C11/16 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49034 ,  Y10T29/49044

摘要： Example embodiments of the present invention disclose a semiconductor memory device and a method of forming a memory device. A semiconductor memory device may include a digit line disposed on a substrate, an intermediate insulating layer covering the digit line, a magnetic tunnel junction (MTJ) pattern disposed on the intermediate insulating layer and over the digit line, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., and a bit line connected to the capping pattern and disposed to intersect the digit line. A method of forming a semiconductor memory device may include forming a digit line on a substrate, forming an intermediate insulating layer covering the digit line, forming a magnetic tunnel junction (MTJ) pattern on the intermediate insulating layer, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., performing an annealing operation at a temperature of about 350° C. or higher, and forming a bit line connected to the capping pattern and disposed to intersect the digit line.

摘要翻译： 本发明的示例性实施例公开了半导体存储器件和形成存储器件的方法。 半导体存储器件可以包括设置在衬底上的数字线，覆盖数字线的中间绝缘层，设置在中间绝缘层上方和数字线上的磁性隧道结（MTJ）图案，MTJ图案包括顺序堆叠 下磁性图案，上磁性图案和封盖图案，其中封盖图案在高于约280℃的温度下不与上磁性图案反应，而位线连接到封盖图案并且设置成与数字线相交 。 形成半导体存储器件的方法可以包括在衬底上形成数字线，形成覆盖数字线的中间绝缘层，在中间绝缘层上形成磁隧道结（MTJ）图案，MTJ图案包括顺序层叠的 较低的磁性图案，上部磁性图案和封盖图案，其中封盖图案在高于约280℃的温度下不与上部磁性图案反应，在约350℃或更高的温度下进行退火操作， 并且形成连接到所述封盖图案并且设置成与所述数字线相交的位线。

公开(公告)号：US07218556B2

公开(公告)日：2007-05-15

申请号：US11097495

申请日：2005-04-01

申请人： Hyun-Jo Kim ,  Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Young-Ki Ha ,  Kyung-Tae Nam

发明人： Hyun-Jo Kim ,  Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Young-Ki Ha ,  Kyung-Tae Nam

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A method of writing to magnetic random access memory (MRAM) devices is provided. The method includes preparing a digit line disposed on a semiconductor substrate, a bit line crossing over the digit line, and a magnetic tunnel junction (MTJ) interposed between the digit line and the bit line. The MTJ has a pinned layer, a tunneling insulating layer, and a synthetic anti-ferromagnetic (SAF) free layer which are sequentially stacked. In addition, the SAF free layer has a bottom free layer and a top free layer which are separated by an exchange spacer layer. An initial magnetization state of the MTJ is read and compared with a desired magnetization state. When the initial magnetization state is different from the desired magnetization state, a first write line pulse is applied to one of the digit line and the bit line, and a second write line pulse is applied to the other of the digit line and the bit line, thereby changing the magnetization state of the MTJ. The MTJ may be disposed at an angle equal to or greater than 0° and less than 90° to a line to which the second write line pulse is applied.

摘要翻译： 提供了一种写入磁性随机存取存储器（MRAM）器件的方法。 该方法包括准备设置在半导体衬底上的数字线，与数字线交叉的位线以及置于数字线和位线之间的磁性隧道结（MTJ）。 MTJ具有钉扎层，隧道绝缘层和顺序层叠的合成反铁磁（SAF）层。 此外，SAF自由层具有由交换间隔层隔开的无底层和顶部自由层。 读取MTJ的初始磁化状态并与期望的磁化状态进行比较。 当初始磁化状态不同于期望的磁化状态时，第一写入线脉冲被施加到数字线和位线之一，并且第二写入线脉冲被施加到数字线和位线中的另一个 ，从而改变MTJ的磁化状态。 MTJ可以以与第二写入线脉冲施加的线等于或大于0°且小于90°的角度布置。

公开(公告)号：US20050230771A1

公开(公告)日：2005-10-20

申请号：US11103078

申请日：2005-04-11

申请人： Young-Ki Ha ,  Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Kyung-Tae Nam

发明人： Young-Ki Ha ,  Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Kyung-Tae Nam

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/82 ,  H01L43/08

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08

摘要： Provided are magnetic tunnel junction structures having bended tips at both ends thereof, magnetic RAM cells employing the same and photo masks used in formation thereof. The magnetic tunnel junction structures have a pinned layer pattern, a tunneling insulation layer pattern and a free layer pattern, which are stacked on an integrated circuit substrate. At least the free layer pattern has a main body as well as first and second bended tips each protruded from both ends of the main body when viewed from a plan view.

摘要翻译： 提供了在其两端具有弯曲尖端的磁性隧道结结构，使用其的磁性RAM单元和其形成中使用的光掩模。 磁性隧道结结构具有钉扎层图案，隧道绝缘层图案和自由层图案，其堆叠在集成电路基板上。 至少自由层图案具有主体以及当从俯视图观察时各自从主体的两端突出的第一和第二弯曲末端。

公开(公告)号：US20060174473A1

公开(公告)日：2006-08-10

申请号：US11347280

申请日：2006-02-06

申请人： Se-Chung Oh ,  Jang-Eun Lee ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Kyung-Tae Nam ,  Young-Ki Ha

发明人： Se-Chung Oh ,  Jang-Eun Lee ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Kyung-Tae Nam ,  Young-Ki Ha

IPC分类号： G11B5/33 ,  G11B5/127 ,  H04R31/00

CPC分类号： G11C11/16 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49034 ,  Y10T29/49044

摘要： Example embodiments of the present invention disclose a semiconductor memory device and a method of forming a memory device. A semiconductor memory device may include a digit line disposed on a substrate, an intermediate insulating layer covering the digit line, a magnetic tunnel junction (MTJ) pattern disposed on the intermediate insulating layer and over the digit line, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., and a bit line connected to the capping pattern and disposed to intersect the digit line. A method of forming a semiconductor memory device may include forming a digit line on a substrate, forming an intermediate insulating layer covering the digit line, forming a magnetic tunnel junction (MTJ) pattern on the intermediate insulating layer, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., performing an annealing operation at a temperature of about 350° C. or higher, and forming a bit line connected to the capping pattern and disposed to intersect the digit line.

摘要翻译： 本发明的示例性实施例公开了半导体存储器件和形成存储器件的方法。 半导体存储器件可以包括设置在衬底上的数字线，覆盖数字线的中间绝缘层，设置在中间绝缘层上方和数字线上的磁性隧道结（MTJ）图案，MTJ图案包括顺序堆叠 下磁性图案，上磁性图案和封盖图案，其中封盖图案在高于约280℃的温度下不与上磁性图案反应，而位线连接到封盖图案并且设置成与数字线相交 。 形成半导体存储器件的方法可以包括在衬底上形成数字线，形成覆盖数字线的中间绝缘层，在中间绝缘层上形成磁隧道结（MTJ）图案，MTJ图案包括顺序层叠的 较低的磁性图案，上部磁性图案和封盖图案，其中封盖图案在高于约280℃的温度下不与上部磁性图案反应，在约350℃或更高的温度下进行退火操作， 并且形成连接到所述封盖图案并且设置成与所述数字线相交的位线。

公开(公告)号：US20070230242A1

公开(公告)日：2007-10-04

申请号：US11762319

申请日：2007-06-13

申请人： Jang Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Young-Ki Ha ,  Kyung-Tae Nam

发明人： Jang Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Young-Ki Ha ,  Kyung-Tae Nam

IPC分类号： G11C11/02

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/161

摘要： A magnetic random access memory device may include a semiconductor substrate, a magnetic tunnel junction (MTJ) structure, a contact plug, and a digit line. More particularly, the MTJ structure may be on the semiconductor substrate, and the digit line may be adjacent the magnetic tunnel junction structure. In addition, the contact plug may provide electrical connection between the magnetic tunnel junction structure and the semiconductor substrate, and the contact plug may be between the magnetic tunnel junction structure and the semiconductor substrate. Related methods are also discussed.

摘要翻译： 磁性随机存取存储器件可以包括半导体衬底，磁性隧道结（MTJ）结构，接触插塞和数字线。 更具体地，MTJ结构可以在半导体衬底上，并且数字线可以与磁性隧道结结构相邻。 此外，接触插头可以在磁性隧道结结构和半导体衬底之间提供电连接，并且接触插塞可以在磁性隧道结结构和半导体衬底之间。 还讨论了相关方法。

公开(公告)号：US20070206411A1

公开(公告)日：2007-09-06

申请号：US11746810

申请日：2007-05-10

申请人： Jang Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Young-Ki Ha ,  Kyung-Tae Nam

发明人： Jang Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Young-Ki Ha ,  Kyung-Tae Nam

IPC分类号： G11C11/14

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/161

摘要： A magnetic random access memory device may include a semiconductor substrate, a magnetic tunnel junction (MTJ) structure, a contact plug, and a digit line. More particularly, the MTJ structure may be on the semiconductor substrate, and the digit line may be adjacent the magnetic tunnel junction structure. In addition, the contact plug may provide electrical connection between the magnetic tunnel junction structure and the semiconductor substrate, and the contact plug may be between the magnetic tunnel junction structure and the semiconductor substrate. Related methods are also discussed.

摘要翻译： 磁性随机存取存储器件可以包括半导体衬底，磁性隧道结（MTJ）结构，接触插塞和数字线。 更具体地，MTJ结构可以在半导体衬底上，并且数字线可以与磁性隧道结结构相邻。 此外，接触插头可以在磁性隧道结结构和半导体衬底之间提供电连接，并且接触插塞可以在磁性隧道结结构和半导体衬底之间。 还讨论了相关方法。