-
公开(公告)号：US08623456B2
公开(公告)日：2014-01-07
申请号：US13605926
申请日：2012-09-06
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/54 , H01L21/28562 , H01L21/76843
摘要： A method of depositing a thin film by atomic layer deposition (ALD) on a substrate surface is disclosed. The disclosed method includes placing an ALD deposition proximity head above the substrate with at least one gas channel configured to dispense a gas to an active process region of the substrate surface. The ALD deposition proximity head extends over and is being spaced apart from the active process region of the substrate surface when present. After a pulse of a first reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head, a pulse of a second reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head to react with the first reactant gas to form a portion of the thin layer of ALD film on the surface of substrate underneath the proximity head.
摘要翻译： 公开了一种通过原子层沉积（ALD）在衬底表面上沉积薄膜的方法。 所公开的方法包括将ALD沉积接近头放置在衬底上方，其中至少一个气体通道被配置为将气体分配到衬底表面的活性过程区域。 ALD沉积接近头在存在时延伸超过衬底表面的有效工艺区域并且与其间隔开。 在将第一反应气体的脉冲分配在邻近头部下方的衬底表面的有源工艺区域上之后，第二反应气体的脉冲被分配在邻近头部下方的衬底表面的有源工艺区域上以与 第一反应气体，以在邻近头部下方的基底表面上形成一部分ALD薄膜。
-
公开(公告)号：US09359673B2
公开(公告)日：2016-06-07
申请号：US13489235
申请日：2012-06-05
IPC分类号： C23C16/455 , C23C16/54 , H01L21/67 , H01L21/285 , H01L21/768
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/54 , H01L21/28562 , H01L21/76843
摘要： A proximity heads for dispensing reactants and purging gas to deposit a thin film by Atomic Layer Deposition (ALD) includes a plurality of sides. Extending over a portion of the substrate region and being spaced apart from the portion of the substrate region when present, the proximity head is rotatable so as to place each side in a direction of the substrate region, and is disposed in a vacuum chamber coupled to a carrier gas source to sustain a pressure for the proximity head during operation. Each side of the proximity head includes a gas conduit through which the reactant gas and the purging gas are sequentially dispensed, and at least two separate vacuum conduits on each side of the gas conduit to pull excess reactant gas, purging gas, or deposition byproducts from a reaction volume between a surface of the proximity head facing the substrate and the substrate.
摘要翻译： 用于分配反应物和吹扫气体以通过原子层沉积（ALD）沉积薄膜的邻近头包括多个侧面。 当衬底区域的一部分延伸并与衬底区域的部分间隔开时，邻近头部是可旋转的，以便将每个侧面放置在衬底区域的方向上，并且设置在耦合到 载体气体源，用于在操作期间维持邻近头部的压力。 邻近头部的每一侧包括气体导管，反应气体和净化气体依次分配通过该气体导管，以及在气体导管的每一侧上的至少两个独立的真空管道，以将过量的反应气体，净化气体或沉积副产物从 面对衬底的接近头的表面与衬底之间的反应体积。
-
公开(公告)号：US08287647B2
公开(公告)日：2012-10-16
申请号：US11736511
申请日：2007-04-17
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/54 , H01L21/28562 , H01L21/76843
摘要： The embodiments provide apparatus and methods of depositing conformal thin film on interconnect structures by providing processes and systems using an atomic layer deposition (ALD). More specifically, each of the ALD systems includes a proximity head that has a small reaction volume right above an active process region of the substrate surface. The proximity head dispenses small amount of reactants and purging gas to be distributed and pumped away from the small reaction volume between the proximity head and the substrate in relatively short periods, which increases the through-put. In an exemplary embodiment, a proximity head for dispensing reactants and purging gas to deposit a thin film by atomic layer deposition (ALD) is provided. The proximity head is configured to sequentially dispensing a reactant gas and a purging gas to deposit a thin ALD film under the proximity head. The proximity head covers an active process region of a substrate surface. The proximity head also includes at least one vacuum channel to pull excess reactant gas, purging gas, or deposition byproducts from a reaction volume between a surface of the proximity head facing the substrate and the substrate. The proximity head includes a plurality of sides, each side being configured to dispense either a reactant gas or a purging gas on the substrate surface underneath the proximity head. Each side has at least one vacuum channel.
摘要翻译： 实施例提供了通过提供使用原子层沉积（ALD）的工艺和系统在互连结构上沉积保形薄膜的装置和方法。 更具体地，每个ALD系统包括在基板表面的有效工艺区域正上方具有小的反应体积的邻近头部。 接近头部在较短的时间内分配少量的反应物和净化气体，以在相对较短的时间段内分配和泵送离开较小反应体积，这增加了通过量。 在一个示例性实施例中，提供了用于分配反应物和吹扫气体以通过原子层沉积（ALD）沉积薄膜的邻近头。 接近头被配置为顺序地分配反应气体和净化气体，以在邻近头部附近沉积薄的ALD膜。 接近头覆盖衬底表面的活性过程区域。 接近头还包括至少一个真空通道，以从邻近头部的面向衬底的表面和衬底之间的反应体积拉出过量的反应气体，吹扫气体或沉积副产物。 邻近头部包括多个侧面，每个侧面被构造成在邻近头部下方的基底表面上分配反应物气体或净化气体。 每侧至少有一个真空通道。
-
4.发明申请公开(公告)号：US20080260967A1
公开(公告)日：2008-10-23
申请号：US11736519
申请日：2007-04-17
CPC分类号： C23C16/4412 , C23C16/45544 , C23C16/45595 , H01J37/3244
摘要： The embodiments fill the needs of systems and processes that perform substrate surface treatment to provide homogenous, clean, and sometimes activated surface in order to provide good adhesion between layers to improve metal migration and void propagation. In one exemplary embodiment, a chamber for performing surface treatment and film deposition is provided. The chamber includes a first proximity head for substrate surface treatment configured to dispense a first treatment gas to treat a portion of a surface of a substrate under the first proximity head for substrate surface treatment. The chamber also includes a first proximity head for atomic layer deposition (ALD) configured to sequentially dispensing a first reactant gas and a first purging gas to deposit a first ALD film under the second proximity head for ALD.
摘要翻译： 这些实施例填补了执行基板表面处理以提供均匀，清洁和有时被激活的表面的系统和工艺的需要，以便在层之间提供良好的粘附以改善金属迁移和空隙传播。 在一个示例性实施例中，提供了用于进行表面处理和膜沉积的室。 腔室包括用于衬底表面处理的第一邻近头部，其构造成分配第一处理气体以处理第一邻近头部下方的衬底表面的一部分用于衬底表面处理。 该室还包括用于原子层沉积（ALD）的第一邻近头，其被配置成顺序地分配第一反应气体和第一吹扫气体，以将第一ALD膜沉积在ALD的第二接近头下方。
-
公开(公告)号：US20130040460A1
公开(公告)日：2013-02-14
申请号：US13605926
申请日：2012-09-06
IPC分类号： H01L21/768 , H01L21/4763
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/54 , H01L21/28562 , H01L21/76843
摘要： A method of depositing a thin film by atomic layer deposition (ALD) on a substrate surface is disclosed. The disclosed method includes placing an ALD deposition proximity head above the substrate with at least one gas channel configured to dispense a gas to an active process region of the substrate surface. The ALD deposition proximity head extends over and is being spaced apart from the active process region of the substrate surface when present. After a pulse of a first reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head, a pulse of a second reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head to react with the first reactant gas to form a portion of the thin layer of ALD film on the surface of substrate underneath the proximity head.
摘要翻译： 公开了一种通过原子层沉积（ALD）在衬底表面上沉积薄膜的方法。 所公开的方法包括将ALD沉积接近头放置在衬底上方，其中至少一个气体通道被配置为将气体分配到衬底表面的活性过程区域。 ALD沉积接近头在存在时延伸超过衬底表面的有效工艺区域并且与其间隔开。 在将第一反应气体的脉冲分配在邻近头部下方的衬底表面的有源工艺区域上之后，第二反应气体的脉冲被分配在邻近头部下方的衬底表面的有源工艺区域上以与 第一反应气体，以在邻近头部下方的基底表面上形成一部分ALD薄膜。
-
公开(公告)号：US20120248219A1
公开(公告)日：2012-10-04
申请号：US13489235
申请日：2012-06-05
IPC分类号： B05B1/28
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/54 , H01L21/28562 , H01L21/76843
摘要： A proximity heads for dispensing reactants and purging gas to deposit a thin film by Atomic Layer Deposition (ALD) includes a plurality of sides. Extending over a portion of the substrate region and being spaced apart from the portion of the substrate region when present, the proximity head is rotatable so as to place each side in a direction of the substrate region, and is disposed in a vacuum chamber coupled to a carrier gas source to sustain a pressure for the proximity head during operation. Each side of the proximity head includes a gas conduit through which the reactant gas and the purging gas are sequentially dispensed, and at least two separate vacuum conduits on each side of the gas conduit to pull excess reactant gas, purging gas, or deposition byproducts from a reaction volume between a surface of the proximity head facing the substrate and the substrate.
摘要翻译： 用于分配反应物和吹扫气体以通过原子层沉积（ALD）沉积薄膜的邻近头包括多个侧面。 当衬底区域的一部分延伸并与衬底区域的部分间隔开时，邻近头部是可旋转的，以便将每个侧面放置在衬底区域的方向上，并且设置在耦合到 载体气体源，用于在操作期间维持邻近头部的压力。 邻近头部的每一侧包括气体导管，反应气体和净化气体依次分配通过该气体导管，以及在气体导管的每一侧上的至少两个独立的真空管道，以将过量的反应气体，净化气体或沉积副产物从 面对衬底的接近头的表面与衬底之间的反应体积。
-
公开(公告)号：US20080261412A1
公开(公告)日：2008-10-23
申请号：US11736511
申请日：2007-04-17
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/54 , H01L21/28562 , H01L21/76843
摘要： The embodiments provide apparatus and methods of depositing conformal thin film on interconnect structures by providing processes and systems using an atomic layer deposition (ALD). More specifically, each of the ALD systems includes a proximity head that has a small reaction volume right above an active process region of the substrate surface. The proximity head small amount of reactants and purging gas to be distributed and pumped away from the small reaction volume between the proximity head and the substrate in relatively short periods, which increases the through-put. In an exemplary embodiment, a proximity head for dispensing reactants and purging gas to deposit a thin film by atomic layer deposition (ALD) is provided. The proximity head is configured to sequentially dispensing a reactant gas and a purging gas to deposit a thin ALD film under the proximity head. The proximity head covers an active process region of a substrate surface. The proximity head also includes at least one vacuum channel to pull excess reactant gas, purging gas, or deposition byproducts from a reaction volume between a surface of the proximity head facing the substrate and the substrate. The proximity includes a plurality of sides, each side being configured to dispense either a reactant gas or a purging gas on the substrate surface underneath the proximity head. Each side has at least one vacuum channel.
摘要翻译： 实施例提供了通过提供使用原子层沉积（ALD）的工艺和系统在互连结构上沉积保形薄膜的装置和方法。 更具体地，每个ALD系统包括在基板表面的有效工艺区域正上方具有小的反应体积的邻近头部。 接近头部较少量的反应物和净化气体在相对较短的时间段内被分配并从相邻头部和基底之间的小的反应体积中泵出，这增加了通过量。 在一个示例性实施例中，提供了用于分配反应物和吹扫气体以通过原子层沉积（ALD）沉积薄膜的邻近头。 接近头被配置为顺序地分配反应气体和净化气体，以在邻近头部附近沉积薄的ALD膜。 接近头覆盖衬底表面的活性过程区域。 接近头还包括至少一个真空通道，以从邻近头部的面向衬底的表面和衬底之间的反应体积拉出过量的反应气体，吹扫气体或沉积副产物。 邻近部分包括多个侧面，每个侧面被构造成在邻近头部下方的衬底表面上分配反应物气体或净化气体。 每侧至少有一个真空通道。
-
8.发明申请公开(公告)号：US20080260963A1
公开(公告)日：2008-10-23
申请号：US11736514
申请日：2007-04-17
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/45536 , H01L21/02063 , H01L21/02068 , H01L21/28562 , H01L21/76814 , H01L21/76826 , H01L21/76843 , H01L21/76861 , H01L21/76862
摘要： The embodiments fill the needs of systems and processes that perform substrate surface treatment to provide homogenous, clean, and sometimes activated surface in order to provide good adhesion between layers to improve metal migration and void propagation. In an exemplary embodiment, a proximity head for treating a substrate surface is provided. The proximity head is configured to dispense a treatment gas to treat an active process region of a substrate surface under the proximity head. The proximity head covers the action process region of the substrate surface and the proximity head includes at least one vacuum channel to pull excess treatment gas from a reaction volume between the proximity head and the substrate. The proximity head has an excitation chamber to excite the treatment gas before the treatment gas being dispensed on the active process region portion of the substrate surface.
摘要翻译： 这些实施例填补了执行基板表面处理以提供均匀，清洁和有时被激活的表面的系统和工艺的需要，以便在层之间提供良好的粘附以改善金属迁移和空隙传播。 在示例性实施例中，提供了用于处理基板表面的邻近头。 邻近头部被配置成分配处理气体以处理邻近头部下方的基底表面的活性过程区域。 邻近头部覆盖衬底表面的动作过程区域，并且邻近头部包括至少一个真空通道，以从邻近头部和衬底之间的反应体积拉出过量的处理气体。 接近头具有激励室，以在将处理气体分配在衬底表面的有源工艺区域部分之前激发处理气体。
-
9.发明申请APPARATUS AND METHOD FOR INTEGRATED SURFACE TREATMENT AND DEPOSITION FOR COPPER INTERCONNECT 有权用于铜互连的集成表面处理和沉积的装置和方法公开(公告)号：US20080260940A1
公开(公告)日：2008-10-23
申请号：US11736522
申请日：2007-04-17
CPC分类号： C23C16/54 , C23C16/45544 , H01L21/28562 , H01L21/76814 , H01L21/76826 , H01L21/76843 , H01L21/76861 , H01L21/76862 , H01L21/76873
摘要： A method and system for depositing films on a substrate for copper interconnect in an integrated system is provided. The method includes moving the substrate into a processing chamber having a plurality of proximity heads. Selected ones of the proximity heads is configured to perform at least one of surface treatments and atomic layer depositions (ALDs). The processing chamber is part of the integrated system. Within the processing chamber, barrier layer deposition is performed over a surface of the substrate using one of the plurality of proximity heads functioning to perform barrier layer ALD. In addition, the method includes moving the substrate from the processing chamber, through a transfer module of the integrated system and into a processing module for performing copper seed layer deposition. The processing module for performing copper seed layer deposition is part of the integrated system. Within the processing module for performing copper seed layer deposition, copper seed layer deposition is performed over the surface of the substrate. The integrated system enables controlled-ambient transitions within the integrated system to limit exposure of the substrate to uncontrolled ambient conditions outside of the integrated system.
摘要翻译： 提供了一种用于在集成系统中的用于铜互连的衬底上沉积膜的方法和系统。 该方法包括将衬底移动到具有多个接近头的处理室中。 所选择的接近头被配置为执行表面处理和原子层沉积（ALD）中的至少一个。 处理室是集成系统的一部分。 在处理室内，使用用于执行阻挡层ALD的多个邻近头之一，在衬底的表面上进行阻挡层沉积。 此外，该方法包括通过集成系统的转移模块将处理室的衬底移动到用于执行铜种子层沉积的处理模块中。 用于执行铜种子层沉积的处理模块是集成系统的一部分。 在用于进行铜种子层沉积的处理模块内，在衬底的表面上进行铜籽晶层沉积。 集成系统使集成系统内的受控环境转换能够将基板的曝光限制在集成系统外部的不受控制的环境条件下。
-
10.发明申请APPARATUS FOR INTEGRATED SURFACE TREATMENT AND DEPOSITION FOR COPPER INTERCONNECT 审中-公开综合表面处理和沉积铜箔互连装置公开(公告)号：US20090320749A1
公开(公告)日：2009-12-31
申请号：US12555736
申请日：2009-09-08
IPC分类号： B05C11/00
CPC分类号： C23C16/54 , C23C16/45544 , H01L21/28562 , H01L21/76814 , H01L21/76826 , H01L21/76843 , H01L21/76861 , H01L21/76862 , H01L21/76873
摘要： An integrated system for depositing films on a substrate for copper interconnect is provided. The system includes a processing chamber with a plurality of proximity heads, and a vacuum transfer module coupled to the processing chamber. Selected ones of the proximity heads are used for surface treatments and atomic layer depositions (ALDs). The system further includes a processing module for copper seed layer deposition, which is integrated with a rinse/dryer to enable dry-in/dry-out process capability and is filled with an inert gas to limit the exposure of the substrate to oxygen. Additionally, the system includes a controlled-ambient transfer module coupled to the processing module for copper seed layer deposition. Further, the system includes a loadlock coupled to the vacuum transfer module and to the controlled-ambient transfer module. The integrated system enables controlled-ambient transitions within the system to limit exposure of the substrate to uncontrolled ambient conditions outside of the system.
摘要翻译： 提供了一种用于在铜互连的衬底上沉积膜的集成系统。 该系统包括具有多个接近头的处理室和耦合到处理室的真空传递模块。 所选择的接近头用于表面处理和原子层沉积（ALD）。 该系统还包括用于铜种子层沉积的处理模块，其与冲洗/干燥器集成以实现干/干工艺能力，并且填充惰性气体以限制衬底暴露于氧气。 此外，该系统包括耦合到用于铜种子层沉积的处理模块的受控环境转移模块。 此外，该系统包括耦合到真空传递模块和受控环境传输模块的负载锁。 集成系统使系统内的受控环境转换能够将衬底的暴露限制在系统外部的不受控制的环境条件下。
-
-
-
-
-
-
-
-
-
搜索结果
58 条记录 (耗时 0.035 秒)