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公开(公告)号:US09054188B2
公开(公告)日:2015-06-09
申请号:US13404819
申请日:2012-02-24
申请人: I-Ming Chang , Wen-Huei Guo , Chih-Hao Chang , Shou-Zen Chang , Clement Hsingjen Wann , Tung Ying Lee , Cheng-Long Chen , Jui-Chien Huang
发明人: I-Ming Chang , Wen-Huei Guo , Chih-Hao Chang , Shou-Zen Chang , Clement Hsingjen Wann , Tung Ying Lee , Cheng-Long Chen , Jui-Chien Huang
IPC分类号: H01L21/3205 , H01L21/683 , H01L21/687 , H01L21/31 , H01L29/78 , H01L29/10 , H01L29/66
CPC分类号: H01L21/687 , H01L21/6838 , H01L29/1054 , H01L29/66545 , H01L29/7845 , H01L29/7847 , H01L29/7848 , H01L29/785
摘要: An apparatus for and a method of forming a semiconductor structure is provided. The apparatus includes a substrate holder that maintains a substrate such that the processing surface is curved, such as a convex or a concave shape. The substrate is held in place using point contacts, a plurality of continuous contacts extending partially around the substrate, and/or a continuous ring extending completely around the substrate. The processing may include, for example, forming source/drain regions, channel regions, silicides, stress memorization layers, or the like.
摘要翻译: 提供了一种形成半导体结构的装置和方法。 该装置包括:基板保持件,其保持基板,使得处理表面是弯曲的,例如凸形或凹形。 基板使用点接触保持就位,多个连续接触部分围绕基板延伸,和/或完全围绕基板延伸的连续环。 处理可以包括例如形成源极/漏极区域,沟道区域,硅化物,应力存储层等。
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公开(公告)号:US20130224952A1
公开(公告)日:2013-08-29
申请号:US13404819
申请日:2012-02-24
申请人: I-Ming Chang , Wen-Huei Guo , Chih-Hao Chang , Shou-Zen Chang , Clement Hsingjen Wann , Tung Ying Lee , Cheng-Long Chen , Jui-Chien Huang
发明人: I-Ming Chang , Wen-Huei Guo , Chih-Hao Chang , Shou-Zen Chang , Clement Hsingjen Wann , Tung Ying Lee , Cheng-Long Chen , Jui-Chien Huang
IPC分类号: H01L21/3205 , H01L21/683 , H01L21/687 , H01L21/31
CPC分类号: H01L21/687 , H01L21/6838 , H01L29/1054 , H01L29/66545 , H01L29/7845 , H01L29/7847 , H01L29/7848 , H01L29/785
摘要: An apparatus for and a method of forming a semiconductor structure is provided. The apparatus includes a substrate holder that maintains a substrate such that the processing surface is curved, such as a convex or a concave shape. The substrate is held in place using point contacts, a plurality of continuous contacts extending partially around the substrate, and/or a continuous ring extending completely around the substrate. The processing may include, for example, forming source/drain regions, channel regions, silicides, stress memorization layers, or the like.
摘要翻译: 提供了一种形成半导体结构的装置和方法。 该装置包括:基板保持件,其保持基板,使得处理表面是弯曲的,例如凸形或凹形。 基板使用点接触保持就位,多个连续接触部分围绕基板延伸,和/或完全围绕基板延伸的连续环。 处理可以包括例如形成源极/漏极区域,沟道区域,硅化物,应力存储层等。
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