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公开(公告)号：US20230046256A1
公开(公告)日：2023-02-16
申请号：US17796554
申请日：2021-01-25
Inventor： Laurent Lamesch , Tobias Pampel , Michael Puetz , Bertrand Rue , Laurent Vanstraelen
IPC: H03K17/955 , B62D1/06 , B60N2/56 , B60N2/00 , H05B3/03
Abstract: A sensor arrangement for capacitive detection of an object, including: an electrode arrangement having a heating element as an electrode; a detection device providing a detection signal to a sensor electrode and capacitively detecting the presence of an object near the sensor electrode; a high-side switch connected between a heating power source having a first potential and the heating element; a low-side switch connected between the heating element and a second potential; and a gate controller closing the high-side switch and low-side switch in a heating mode and opening the high-side switch and low-side switch in a detection mode. A decoupling MOSFET is connected between the high-side switch and heating element. The gate controller closes the MOSFET in the heating mode and opens the MOSFET in the detection mode. During the detection mode, the decoupling circuit provides a third potential at a first node between the high-side switch and MOSFET.
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公开(公告)号：US12221015B2
公开(公告)日：2025-02-11
申请号：US17796554
申请日：2021-01-25
Inventor： Laurent Lamesch , Tobias Pampel , Michael Puetz , Bertrand Rue , Laurent Vanstraelen
IPC: H03K17/687 , B60N2/00 , B60N2/56 , B62D1/06 , H03K17/74 , H03K17/955 , H05B3/00 , H05B3/03
Abstract: A sensor arrangement for capacitive detection of an object, including: an electrode arrangement having a heating element as an electrode; a detection device providing a detection signal to a sensor electrode and capacitively detecting the presence of an object near the sensor electrode; a high-side switch connected between a heating power source having a first potential and the heating element; a low-side switch connected between the heating element and a second potential; and a gate controller closing the high-side switch and low-side switch in a heating mode and opening the high-side switch and low-side switch in a detection mode. A decoupling MOSFET is connected between the high-side switch and heating element. The gate controller closes the MOSFET in the heating mode and opens the MOSFET in the detection mode. During the detection mode, the decoupling circuit provides a third potential at a first node between the high-side switch and MOSFET.
