公开(公告)号：US09147998B2

公开(公告)日：2015-09-29

申请号：US13688330

申请日：2012-11-29

申请人： IHP GmbH—Innovations for High Performance Microelectronics

发明人： Martin Kittler ,  Tzanimir Arguirov ,  Manfred Reiche

IPC分类号： H01S5/30 ,  H01L33/00 ,  H01L33/02 ,  H01L33/34 ,  H01L33/58

CPC分类号： H01S5/305 ,  H01L33/0037 ,  H01L33/0079 ,  H01L33/025 ,  H01L33/34 ,  H01L33/58

摘要： A light emitting semiconductor device according the invention includes an SOI substrate, a collector and an injector. The SOI substrate includes a carrier layer, a buried oxide layer on the carrier layer, and a doped silicon layer structure with a conductivity type. The doped silicon layer structure with the conductivity type includes at least two silicon- or silicon germanium layers arranged adjacent to one another, wherein a dislocation network is configured in their interface portions at which dislocation network a radiative charge carrier combination with a light energy is provided, which light energy is smaller than a band gap energy of the silicon- or silicon germanium layers. The collector is formed as a pn-junction in a portion between the dislocation network and a surface of the silicon layer structure that is oriented away from the carrier layer, and wherein the injector is configured as a metal insulator semiconductor diode.

摘要翻译： 根据本发明的发光半导体器件包括SOI衬底，集电极和注射器。 SOI衬底包括载体层，载体层上的掩埋氧化物层和具有导电类型的掺杂硅层结构。 具有导电类型的掺杂硅层结构包括彼此相邻布置的至少两个硅或锗锗层，其中位错网络在其界面部分中配置，在该界面部分中提供了具有光能的辐射电荷载流子组合 ，其光能小于硅或锗锗层的带隙能量。 集电体在位错网络和硅层结构的远离载体层的表面之间的部分中形成为pn结，并且其中注入器被配置为金属绝缘体半导体二极管。