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    Method for forming a pellicle
    2.
    发明授权
    Method for forming a pellicle 有权

    公开(公告)号：US11092886B2

    公开(公告)日：2021-08-17

    申请号：US15979827

    申请日：2018-05-15

    申请人： IMEC VZW ,  Imec USA Nanoelectronics Design Center

    发明人： Marina Timmermans ,  Emily Gallagher ,  Ivan Pollentier ,  Hanns Christoph Adelmann ,  Cedric Huyghebaert ,  Jae Uk Lee

    IPC分类号： G03F1/62 ,  G03F1/64

    摘要： The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.

    Method for Forming a Pellicle
    6.
    发明申请
    Method for Forming a Pellicle 审中-公开

    公开(公告)号：US20180329291A1

    公开(公告)日：2018-11-15

    申请号：US15979827

    申请日：2018-05-15

    申请人： IMEC VZW ,  Imec USA Nanoelectronics Design Center

    发明人： Marina Timmermans ,  Emily Gallagher ,  Ivan Pollentier ,  Hanns Christoph Adelmann ,  Cedric Huyghebaert ,  Jae Uk Lee

    IPC分类号： G03F1/64

    CPC分类号： G03F1/64 ,  G03F1/62

    摘要： The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.

    STATIC RANDOM-ACCESS MEMORY DEVICE WITH THREE-LAYERED CELL DESIGN
    7.
    发明公开
    STATIC RANDOM-ACCESS MEMORY DEVICE WITH THREE-LAYERED CELL DESIGN 审中-公开

    公开(公告)号：US20230189497A1

    公开(公告)日：2023-06-15

    申请号：US18064133

    申请日：2022-12-09

    申请人： IMEC VZW

    发明人： Cedric Huyghebaert ,  Tom Schram ,  Iuliana Radu

    IPC分类号： H10B10/00 ,  G11C11/419

    CPC分类号： H10B10/125 ,  G11C11/419

    摘要： The present disclosure relates generally to static random-access memory (SRAM) devices. Specifically, the disclosure proposes a SRAM device with a three-layered SRAM cell design. The SRAM cell comprises a storage comprising four storage transistors, and comprises two access transistors to control access to the storage cell. The SRAM cell further comprises a stack of three layer structures. Two of the storage transistors are formed in a first layer structure of the stack, and two other of the storage transistors are formed in a second layer structure of the stack adjacent to the first layer structure. The two access transistors are formed in a third layer structure of the stack adjacent to the second layer structure. Each layer structure comprises a semiconductor material, the transistors in the layer structure are based on that semiconductor material, and at least two of the three layer structures comprise a different type of semiconductor material.