公开(公告)号：US20250096149A1

公开(公告)日：2025-03-20

申请号：US18885846

申请日：2024-09-16

Applicant: Infineon Technologies AG

Inventor： Rudolf Elpelt ,  Francisco Javier Santos Rodriguez ,  Bernd Zippelius ,  Antonio Vellei ,  Alexander Breymesser

IPC: H01L23/544 ,  H01L21/04 ,  H01L23/31 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/872

Abstract: A semiconductor device includes a single-crystalline silicon carbide portion with a first surface, an opposite second surface, and a third surface extending from the first surface in a direction of the second surface. Along the third surface, hydrogen atoms and/or atoms of one or more nonmetal elements other than silicon and having an atomic number greater than six saturate dangling bonds of the silicon carbide portion and/or a passivating coating is in direct contact with the third surface. The semiconductor device further includes a glass structure and an interface layer structure between the third surface and the glass structure.

公开(公告)号：US12211703B2

公开(公告)日：2025-01-28

申请号：US18236434

申请日：2023-08-22

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Alexander Breymesser ,  Bernhard Goller ,  Matthias Kuenle ,  Helmut Oefner ,  Francisco Javier Santos Rodriguez ,  Stephan Voss

IPC: H01L21/324 ,  H01L21/265 ,  H01L21/78

Abstract: A method of forming a semiconductor device includes: forming a first semiconductor layer on a semiconductor substrate, the first semiconductor layer being of the same dopant type as the semiconductor substrate, the first semiconductor layer having a higher dopant concentration than the semiconductor substrate; increasing the porosity of the first semiconductor layer; first annealing the first semiconductor layer in an atmosphere including an inert gas; forming a second semiconductor layer on the first semiconductor layer; and separating the second semiconductor layer from the semiconductor substrate by splitting within the first semiconductor layer. Additional methods of forming a semiconductor device are described.

公开(公告)号：US12033972B2

公开(公告)日：2024-07-09

申请号：US17090941

申请日：2020-11-06

Applicant: Infineon Technologies AG

Inventor： Joachim Mahler ,  Michael Bauer ,  Jochen Dangelmaier ,  Reimund Engl ,  Johann Gatterbauer ,  Frank Hille ,  Michael Huettinger ,  Werner Kanert ,  Heinrich Koerner ,  Brigitte Ruehle ,  Francisco Javier Santos Rodriguez ,  Antonio Vellei

IPC: H01L23/00 ,  H01L21/02 ,  H01L23/29 ,  H01L23/31 ,  H01L23/495

CPC classification number: H01L24/48 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02288 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/83 ,  H01L24/85 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L23/3107 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/0346 ,  H01L2224/03826 ,  H01L2224/03827 ,  H01L2224/03831 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45573 ,  H01L2224/45611 ,  H01L2224/45618 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45649 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/4567 ,  H01L2224/45671 ,  H01L2224/45672 ,  H01L2224/4568 ,  H01L2224/45686 ,  H01L2224/4569 ,  H01L2224/45693 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/4813 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48507 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/85801 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/73265 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2224/48465 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2224/45144 ,  H01L2924/00015 ,  H01L2224/45139 ,  H01L2924/00015 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45664 ,  H01L2224/45572 ,  H01L2224/45147 ,  H01L2224/45664 ,  H01L2224/45644 ,  H01L2224/45147 ,  H01L2924/01046 ,  H01L2224/45639 ,  H01L2924/00014 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2924/00014 ,  H01L2224/05664 ,  H01L2924/00014 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45669 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45644 ,  H01L2224/45565 ,  H01L2224/45139 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45611 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45618 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45649 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45655 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45657 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45666 ,  H01L2224/45655 ,  H01L2924/01029 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45639 ,  H01L2224/45664 ,  H01L2924/01028 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/05681 ,  H01L2924/00014 ,  H01L2224/05657 ,  H01L2924/00014 ,  H01L2224/05666 ,  H01L2924/00014 ,  H01L2224/05684 ,  H01L2924/00014 ,  H01L2224/05147 ,  H01L2924/01056 ,  H01L2224/48465 ,  H01L2224/48247 ,  H01L2924/00 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/2919 ,  H01L2924/00014 ,  H01L2924/00014 ,  H01L2224/43848

Abstract: A method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.

公开(公告)号：US20240047457A1

公开(公告)日：2024-02-08

申请号：US18361260

申请日：2023-07-28

Applicant: Infineon Technologies AG

Inventor： Francisco Javier Santos Rodriguez ,  Roman Baburske ,  Hans-Joachim Schulze ,  Daniel Schlögl

IPC: H01L27/088 ,  H01L21/822

CPC classification number: H01L27/088 ,  H01L21/8221 ,  H03K17/567

Abstract: A power semiconductor device includes at a first side and electrically isolated from first and second load terminals, first control electrodes for controlling a load current in first semiconductor channel structures formed in an active region at the first side, and at a second side and electrically isolated from the first and second load terminals, second control electrodes for controlling the load current in second semiconductor channel structures formed in the active region at the second side. At the second side and in a contiguous area of modified control (AMC) belonging to the active region and having a lateral extension of at least 30% of a thickness of a semiconductor body of the device, either no second control electrodes are provided or the second control electrodes are less effective in removing free charge carriers out of the power semiconductor device than the second control electrodes outside the AMC.

公开(公告)号：US11626371B2

公开(公告)日：2023-04-11

申请号：US17135399

申请日：2020-12-28

Applicant: Infineon Technologies AG

Inventor： Francisco Javier Santos Rodriguez ,  Markus Harfmann

IPC: H01L23/00

Abstract: One or more semiconductor structures and/or methods for forming support structures for semiconductor structures are provided. A first porosification layer is formed over a semiconductor substrate. A first epitaxial layer is formed over the first porosification layer. A second porosification layer is formed from a first portion of the first epitaxial layer and a support structure is formed from a second portion of the first epitaxial layer.

公开(公告)号：US11594621B2

公开(公告)日：2023-02-28

申请号：US17087678

申请日：2020-11-03

Applicant: Infineon Technologies AG

Inventor： Antonio Vellei ,  Markus Beninger-Bina ,  Matteo Dainese ,  Christian Jaeger ,  Johannes Georg Laven ,  Alexander Philippou ,  Francisco Javier Santos Rodriguez

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/40 ,  H01L21/033 ,  H01L21/225 ,  H01L21/265 ,  H01L21/324 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: A method of processing a power semiconductor device includes: providing a semiconductor body with a drift region of a first conductivity type; forming a plurality of trenches extending into the semiconductor body along a vertical direction and arranged adjacent to each other along a first lateral direction; providing a mask arrangement at the semiconductor body, the mask arrangement having a lateral structure according to which some of the trenches are exposed and at least one of the trenches is covered by the mask arrangement along the first lateral direction; forming, below bottoms of the exposed trenches, a plurality of doping regions of a second conductivity type complementary to the first conductivity type; removing the mask arrangement; and extending the plurality of doping regions in parallel to the first lateral direction such that the plurality of doping regions overlap and form a barrier region of the second conductivity type adjacent to the bottoms of the exposed trenches.

公开(公告)号：US20220293558A1

公开(公告)日：2022-09-15

申请号：US17829961

申请日：2022-06-01

Applicant: Infineon Technologies AG

Inventor： Roland Rupp ,  Alexander Breymesser ,  Andre Brockmeier ,  Carsten von Koblinski ,  Francisco Javier Santos Rodriguez ,  Ronny Kern

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/29 ,  H01L21/48 ,  H01L21/78 ,  H01L23/31 ,  H01L23/367

Abstract: A method for forming semiconductor devices includes: attaching a glass structure to a wide band-gap semiconductor wafer having a plurality of semiconductor devices; forming at least one pad structure electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor wafer, by forming electrically conductive material within at least one opening extending through the glass structure; and reducing a thickness of the wide band-gap semiconductor wafer after attaching the glass structure. Additional methods for forming semiconductor devices are described.

公开(公告)号：US11417528B2

公开(公告)日：2022-08-16

申请号：US16884442

申请日：2020-05-27

Applicant: Infineon Technologies AG

Inventor： Francisco Javier Santos Rodriguez ,  Roland Rupp ,  Hans-Joachim Schulze

IPC: H01L21/26 ,  H01L29/16 ,  H01L21/268 ,  H01L21/02 ,  H01L29/165

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a carbon structure on a handle substrate at a first surface of the handle substrate. The method further includes attaching a first surface of a semiconductor substrate to the first surface of the handle substrate. The method further includes processing the semiconductor substrate and performing a separation process to separate the handle substrate from the semiconductor substrate. The separation process comprises modifying the carbon structure.

公开(公告)号：US11342433B2

公开(公告)日：2022-05-24

申请号：US16693909

申请日：2019-11-25

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Thomas Aichinger ,  Iris Moder ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze ,  Carsten von Koblinski

IPC: H01L29/49 ,  H01L29/16 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L21/04 ,  H01L29/45

Abstract: A silicon carbide device includes a silicon carbide substrate having a body region and a source region of a transistor cell. Further, the silicon carbide device includes a titanium carbide gate electrode of the transistor cell.

公开(公告)号：US20220085174A1

公开(公告)日：2022-03-17

申请号：US17532030

申请日：2021-11-22

Applicant: Infineon Technologies AG

Inventor： Andre Brockmeier ,  Guenter Denifl ,  Ronny Kern ,  Michael Knabl ,  Matteo Piccin ,  Francisco Javier Santos Rodriguez

IPC: H01L29/16 ,  H01L21/02 ,  H01L23/544 ,  H01L21/56 ,  H01L21/78 ,  H01L23/31

Abstract: A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.