公开(公告)号：US10566424B2

公开(公告)日：2020-02-18

申请号：US15820770

申请日：2017-11-22

Applicant: Infineon Technologies AG

Inventor： Nico Caspary ,  Helmut Oefner ,  Hans-Joachim Schulze

IPC: H01L29/10 ,  H01L29/167 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  C30B15/04 ,  C30B29/06 ,  C30B30/04

Abstract: A method of manufacturing a silicon wafer is provided that includes extracting an n-type silicon ingot over an extraction time period from the a silicon melt comprising n-type dopants; adding p-type dopants to the silicon melt over at least part of the extraction time period, thereby compensating an n-type doping in the n-type silicon ingot by 10% to 80%; slicing the silicon ingot; forming hydrogen related donors in the silicon wafer by irradiating the silicon wafer with protons; and annealing the silicon wafer subsequent to the forming of the hydrogen related donors in the silicon wafer.

公开(公告)号：US10566198B2

公开(公告)日：2020-02-18

申请号：US16135805

申请日：2018-09-19

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Johannes Baumgartl ,  Helmut Oefner

IPC: H01L21/22 ,  H01L21/02 ,  H01L21/266

Abstract: A first dose of first dopants is introduced into a semiconductor body having a first surface. A thickness of the semiconductor body is increased by forming a first semiconductor layer on the first surface of the semiconductor body. While forming the first semiconductor layer a final dose of doping in the first semiconductor layer is predominantly set by introducing at least 20% of the first dopants from the semiconductor body into the first semiconductor layer.

公开(公告)号：US10529838B2

公开(公告)日：2020-01-07

申请号：US15831247

申请日：2017-12-04

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Moriz Jelinek ,  Johannes Laven ,  Helmut Oefner ,  Werner Schustereder

IPC: H01L29/739 ,  H01L29/36 ,  H01L29/10 ,  H01L21/324 ,  H01L21/263 ,  H01L21/66

Abstract: A semiconductor device includes at least one transistor structure. The at least one transistor structure includes an emitter or source terminal, and a collector or drain terminal. A carbon concentration within a semiconductor substrate region located between the emitter or source terminal and the collector or drain terminal varies between the emitter or source terminal and the collector or drain terminal.

公开(公告)号：US20190088482A1

公开(公告)日：2019-03-21

申请号：US16135805

申请日：2018-09-19

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Johannes Baumgartl ,  Helmut Oefner

IPC: H01L21/22 ,  H01L21/266 ,  H01L21/02

Abstract: A first dose of first dopants is introduced into a semiconductor body having a first surface. A thickness of the semiconductor body is increased by forming a first semiconductor layer on the first surface of the semiconductor body. While forming the first semiconductor layer a final dose of doping in the first semiconductor layer is predominantly set by introducing at least 20% of the first dopants from the semiconductor body into the first semiconductor layer.

公开(公告)号：US09972704B2

公开(公告)日：2018-05-15

申请号：US14935830

申请日：2015-11-09

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Johannes Georg Laven ,  Helmut Oefner ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/00 ,  H01L29/739 ,  H01L21/263 ,  H01L21/324 ,  H01L29/10 ,  H01L29/36 ,  H01L21/66

CPC classification number: H01L29/7395 ,  H01L21/263 ,  H01L21/324 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7397

Abstract: A method for forming a semiconductor device comprises implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of the defined dose of protons and the defined temperature profile is selected depending on a carbon-related parameter indicating information on a carbon concentration within at least a part of the semiconductor substrate.

公开(公告)号：US20160293712A1

公开(公告)日：2016-10-06

申请号：US14672783

申请日：2015-03-30

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Helmut Oefner

IPC: H01L29/36 ,  H01L21/223

CPC classification number: H01L29/36 ,  C30B29/06 ,  C30B31/06 ,  C30B33/00 ,  C30B33/005 ,  H01L21/02005

Abstract: A semiconductor wafer includes first and second main surfaces opposite to each other along a vertical direction, and a side surface encircling the semiconductor wafer. A lateral distance perpendicular to the vertical direction between the side surface and a center of the semiconductor wafer includes first and second parts. The first part extends from the side surface to the second part and the second part extends from the first part to the center. An average concentration of at least one of nitrogen and oxygen in the first part is greater than 5×1014 cm−3 and exceeds an average concentration of the at least one of nitrogen and oxygen in the second part by more than 20% of the average concentration of the at least one of nitrogen and oxygen in the second part.

Abstract translation: 半导体晶片包括沿着垂直方向彼此相对的第一和第二主表面以及围绕半导体晶片的侧表面。 垂直于半导体晶片的侧表面和中心之间的垂直方向的横向距离包括第一和第二部分。 第一部分从侧表面延伸到第二部分，第二部分从第一部分延伸到中心。 第一部分中氮和氧中的至少一个的平均浓度大于5×1014cm-3，并且超过第二部分中的氮和氧的至少一个的平均浓度超过平均浓度的20％ 第二部分中的氮和氧中的至少一种的浓度。

公开(公告)号：US20160099186A1

公开(公告)日：2016-04-07

申请号：US14963855

申请日：2015-12-09

Applicant: Infineon Technologies AG

Inventor： Reinhard Ploss ,  Helmut Oefner ,  Hans-Joachim Schulze

IPC: H01L21/66 ,  H01L21/324 ,  H01L21/265

CPC classification number: H01L22/20 ,  H01L21/261 ,  H01L21/263 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/324 ,  H01L22/12 ,  H01L22/14 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66325 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/74 ,  H01L29/7813 ,  H01L29/8611 ,  H01L29/872

Abstract: A method for treating a semiconductor wafer having a basic doping is disclosed. The method includes determining a doping concentration of the basic doping, and adapting the basic doping of the semiconductor wafer by postdoping. The postdoping includes at least one of the following methods: a proton implantation and a subsequent thermal process for producing hydrogen induced donors. In this case, at least one of the following parameters is dependent on the determined doping concentration of the basic doping: an implantation dose of the proton implantation, and a temperature of the thermal process.

Abstract translation: 公开了一种用于处理具有基本掺杂的半导体晶片的方法。 该方法包括确定基本掺杂的掺杂浓度，以及通过后掺杂来适应半导体晶片的基本掺杂。 后掺杂包括以下方法中的至少一种：质子注入和随后的用于产生氢诱导供体的热处理。 在这种情况下，以下参数中的至少一个取决于所确定的碱性掺杂的掺杂浓度：质子注入的注入剂量和热处理的温度。

公开(公告)号：US20230395394A1

公开(公告)日：2023-12-07

申请号：US18236434

申请日：2023-08-22

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Alexander Breymesser ,  Bernhard Goller ,  Matthias Kuenle ,  Helmut Oefner ,  Francisco Javier Santos Rodriguez ,  Stephan Voss

IPC: H01L21/324 ,  H01L21/78 ,  H01L21/265

CPC classification number: H01L21/3247 ,  H01L21/7806 ,  H01L21/26506

Abstract: A method of forming a semiconductor device includes: forming a first semiconductor layer on a semiconductor substrate, the first semiconductor layer being of the same dopant type as the semiconductor substrate, the first semiconductor layer having a higher dopant concentration than the semiconductor substrate; increasing the porosity of the first semiconductor layer; first annealing the first semiconductor layer in an atmosphere including an inert gas; forming a second semiconductor layer on the first semiconductor layer; and separating the second semiconductor layer from the semiconductor substrate by splitting within the first semiconductor layer. Additional methods of forming a semiconductor device are described.

公开(公告)号：US09853137B2

公开(公告)日：2017-12-26

申请号：US14935830

申请日：2015-11-09

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Johannes Georg Laven ,  Helmut Oefner ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/00 ,  H01L29/739 ,  H01L21/263 ,  H01L21/324 ,  H01L21/66 ,  H01L29/10 ,  H01L29/36

Abstract: A method for forming a semiconductor device comprises implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of the defined dose of protons and the defined temperature profile is selected depending on a carbon-related parameter indicating information on a carbon concentration within at least a part of the semiconductor substrate.

公开(公告)号：US20170316929A1

公开(公告)日：2017-11-02

申请号：US15650504

申请日：2017-07-14

Applicant: Infineon Technologies AG

Inventor： Helmut Oefner ,  Nico Caspary ,  Mohammad Momeni ,  Reinhard Ploss ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze

IPC: H01L21/02 ,  H01L21/268 ,  H01L21/324 ,  H01L29/66 ,  H01L21/18 ,  H01L21/28 ,  H01L21/322 ,  H01L21/225

CPC classification number: H01L29/7393 ,  H01L21/02002 ,  H01L21/02005 ,  H01L21/02008 ,  H01L21/0201 ,  H01L21/02016 ,  H01L21/187 ,  H01L21/2257 ,  H01L21/268 ,  H01L21/28238 ,  H01L21/3221 ,  H01L21/3225 ,  H01L21/324 ,  H01L21/3242 ,  H01L21/76256 ,  H01L29/1095 ,  H01L29/32 ,  H01L29/66325 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813

Abstract: A method for manufacturing a substrate wafer 100 includes providing a device wafer (110) having a first side (111) and a second side (112); subjecting the device wafer (110) to a first high temperature process for reducing the oxygen content of the device wafer (110) at least in a region (112a) at the second side (112); bonding the second side (112) of the device wafer (110) to a first side (121) of a carrier wafer (120) to form a substrate wafer (100); processing the first side (101) of the substrate wafer (100) to reduce the thickness of the device wafer (110); subjecting the substrate wafer (100) to a second high temperature process for reducing the oxygen content at least of the device wafer (110); and at least partially integrating at least one semiconductor component (140) into the device wafer (110) after the second high temperature process.