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公开(公告)号：US09726841B1
公开(公告)日：2017-08-08
申请号：US15208547
申请日：2016-07-12
Applicant: INPHI CORPORATION
Inventor： Jie Lin , Masaki Kato
IPC: G02B6/12 , G02B6/42 , H01L31/0232 , H01L31/028 , H01L31/02 , H01L27/02 , H01L31/0224 , H01L31/18
CPC classification number: H01L27/0248 , G02B6/12 , G02B6/12004 , G02B6/4275 , G02B2006/12123 , H01L27/1443 , H01L31/02005 , H01L31/02019 , H01L31/022408 , H01L31/02327 , H01L31/028 , H01L31/103 , H01L31/1804
Abstract: An integrated photo detector with enhanced electrostatic discharge damage (ESD) protection. The integrated photo detector includes a first photodiode formed in the SOI substrate and associated with a first p-electrode and a first n-electrode. Additionally, the integrated photo detector includes a second photodiode formed in the SOI substrate associated with a second p-electrode and a second n-electrode forming a capacitance no larger than a few femto Faradays. Moreover, the integrated photo detector includes a first electrode and a second electrode disposed respectively on the SOI substrate. The first/second electrode is respectively connected to the first p/n-electrode via a first/second metallic layer patterned with a reduced width from the first/second electrode to the first p/n-electrode and connected to the second p/n-electrode via a first/second metallic wire to make a parallel coupling between the first photodiode and the second photodiode with an ESD threshold of about 100V.
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公开(公告)号：US09746744B1
公开(公告)日：2017-08-29
申请号：US15609655
申请日：2017-05-31
Applicant: INPHI CORPORATION
Inventor： Jie Lin , Masaki Kato , Robb Johnson
CPC classification number: G02F1/2257 , G02B6/134 , G02B6/136 , G02B2006/12061 , G02B2006/12142 , G02B2006/12173 , G02F2001/212
Abstract: A method of forming a waveguide for a self-aligned Mach-Zehnder-Interferometer. The method includes forming a waveguide on a substrate and providing a first mask with a first opening exposing a first width and a pair of second widths towards opposite sides of the first width. Additionally, the method includes doping a first dopant of a first concentration through the first opening into a first thickness of the waveguide to form a first semiconducting phase thereof. The method includes providing a second mask with a second opening exposing part of the waveguide and doping a second dopant of a second concentration through the second opening into the part of the waveguide to form a second semiconductor phase thereof sharing a boundary with the first semiconducting phase to form a PN junction across the boundary. The boundary is allowed to vary with a margin of tolerance within the first width.
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公开(公告)号：US09547131B1
公开(公告)日：2017-01-17
申请号：US15147803
申请日：2016-05-05
Applicant: INPHI CORPORATION
Inventor： Jie Lin
CPC classification number: G02B6/2773 , G02B6/102 , G02B6/105 , G02B6/126 , G02B6/2726 , G02B6/274 , G02B6/29344
Abstract: A compact polarization beam splitter is formed by cascading two stages of three restricted MMIs. Each MIMI is configured to set ultra compact width and length for a rectangular waveguide body to limit no more than 4 modes therein working as a polarization beam splitter in a 50 nm wavelength window around 1300 nm. Each MMI is further configured to couple an input at a first end and a TE bar output and a TM cross output at a second end of the rectangular waveguide body. The locations of the input/output waveguide ports are designated to be a distance of ⅙ of the width away from a middle line from the first end to the second end. Two second-stage MMIs have their inputs coupled to the TE bar output and the TM cross output of the first-stage MMI and provide a second-stage TE bar output and a second-stage TM cross output, respectively.
Abstract translation: 紧凑的偏振分束器通过级联三个受限MMI的两个阶段而形成。 每个MIMI被配置成为矩形波导体设置超紧凑的宽度和长度，以限制其中不超过4个模式，作为约1300nm的50nm波长窗口中的偏振分束器。 每个MMI被进一步配置为将矩形波导体的第二端处的输入和TE条输出和TM交叉输出耦合。 输入/输出波导端口的位置被指定为远离中间线从第一端到第二端的宽度a的距离。 两个第二级MMI的输入端分别与第一级MMI的TE条输出和TM交叉输出耦合，分别提供第二级TE条输出和第二级TM交叉输出。
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公开(公告)号：US11333830B2
公开(公告)日：2022-05-17
申请号：US16274826
申请日：2019-02-13
Applicant: INPHI CORPORATION
Inventor： Jie Lin
Abstract: The present application discloses a polarization beam splitter (PBS). The PBS includes a silicon substrate and a planar structure formed thereon characterized by an isosceles trapezoid shape with a first parallel side and a second parallel side connected by two tapered sides. The first parallel side has longer width than the second parallel side, both of which is separated by a length no greater than 100 μm along a line of symmetry bisecting the pair of parallel sides. The PBS further includes a pair of input ports coupled to the first parallel side and a pair of output ports coupled to the second parallel side. The planar structure is configured to receive an input light wave of any wavelength in C-band via one input port and split to a TE-mode light wave and a TM-mode light wave respectively outputting to the pair of output ports.
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公开(公告)号：US11086189B1
公开(公告)日：2021-08-10
申请号：US16739973
申请日：2020-01-10
Applicant: INPHI CORPORATION
Inventor： Xiaoguang Tu , Jie Lin , Masaki Kato
Abstract: A silicon optical modulator includes two silicon waveguide branches coupled between a 2×2 splitter at a common input end and a 2×2 splitter at a common output end. The modulator further includes at least one of the two silicon waveguide branches comprising a ridge-shape having a central portion of a height sandwiched in a width direction by a first side portion and a second side portion throughout a length of the waveguide. The central portion in each cross-section plane thereof includes a p-region and a n-region separated by a continuous borderline to form an irregular shaped PN junction. The borderline is configured to have at least one section-line with a sloped angle relative to the width direction and have a total border-length substantially longer than the height. The p-region is in contact with the first side portion and the n-region is in contact with the second side portion.
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Patent Agency Ranking
公开(公告)号：US10310185B1
公开(公告)日：2019-06-04
申请号：US16033074
申请日：2018-07-11
Applicant: INPHI CORPORATION
Inventor： Jie Lin , Masaki Kato
Abstract: The present application discloses a Transverse Electric (TE) polarizer. The TE polarizer includes a silicon-on-insulator substrate having a silicon dioxide layer. The TE polarizer further includes a waveguide embedded in the silicon dioxide layer. Additionally, the TE polarizer includes a plate structure embedded in the silicon dioxide layer substantially in parallel to the waveguide with a gap distance. In an embodiment, the plate structure induces an extra transmission loss to a Transverse Magnetic (TM) mode in a light wave traveling through the waveguide.
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公开(公告)号：US09851507B1
公开(公告)日：2017-12-26
申请号：US15671905
申请日：2017-08-08
Applicant: INPHI CORPORATION
Inventor： Jie Lin
CPC classification number: G02B6/2773 , G02B6/102 , G02B6/105 , G02B6/126 , G02B6/2726 , G02B6/274 , G02B6/29344
Abstract: A compact polarization beam splitter is formed by cascading two stages of three restricted MMIs. Each MMI is configured to set ultra compact width and length for a rectangular waveguide body to limit no more than 4 modes therein working as a polarization beam splitter in a 50 nm wavelength window around 1300 nm. Each MMI is further configured to couple an input at a first end and a TE bar output and a TM cross output at a second end of the rectangular waveguide body. The locations of the input/output waveguide ports are designated to be a distance of ⅙ of the width away from a middle line from the first end to the second end. Two second-stage MMIs have their inputs coupled to the TE bar output and the TM cross output of the first-stage MMI and provide a second-stage TE bar output and a second-stage TM cross output, respectively.
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公开(公告)号：US09759865B1
公开(公告)日：2017-09-12
申请号：US15375033
申请日：2016-12-09
Applicant: INPHI CORPORATION
Inventor： Jie Lin
CPC classification number: G02B6/2773 , G02B6/102 , G02B6/105 , G02B6/126 , G02B6/2726 , G02B6/274 , G02B6/29344
Abstract: A compact polarization beam splitter is formed by cascading two stages of three restricted MMIs. Each MIMI is configured to set ultra compact width and length for a rectangular waveguide body to limit no more than 4 modes therein working as a polarization beam splitter in a 50 nm wavelength window around 1300 nm. Each MMI is further configured to couple an input at a first end and a TE bar output and a TM cross output at a second end of the rectangular waveguide body. The locations of the input/output waveguide ports are designated to be a distance of ⅙ of the width away from a middle line from the first end to the second end. Two second-stage MMIs have their inputs coupled to the TE bar output and the TM cross output of the first-stage MMI and provide a second-stage TE bar output and a second-stage TM cross output, respectively.
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公开(公告)号：US09547127B1
公开(公告)日：2017-01-17
申请号：US15153658
申请日：2016-05-12
Applicant: INPHI CORPORATION
Inventor： Jie Lin , Masaki Kato
CPC classification number: G02B6/126 , G02B6/2773 , G02B6/2804 , G02B2006/12035 , G02B2006/12116 , G02B2006/12147 , G02B2006/1215 , G02B2006/12164
Abstract: A compact polarization beam splitter is formed by cascading two stages of directional couplers each containing two waveguides laid in parallel with a coupling gap. Each waveguide is made by silicon nitride material having a minimum length configured to be comparable with a coupling length for a TE polarization mode being set as twice of a coupling length for a TM polarization mode. A first-stage direction coupler is optimized by making the coupling gap smaller/greater than a nominal value to maximize TE/TM extinction ratio at least for a shorter/longer wavelength window of a designated wavelength band and each of two second-stage directional couplers is optimized by making the coupling gap greater/smaller than the nominal value to maximize TE/TM extinction ratio at least for a complementary longer/shorter wavelength window of the same designated wavelength band.
Abstract translation: 紧凑的偏振分束器通过级联两级定向耦合器形成，每个定向耦合器包含与耦合间隙平行放置的两个波导。 每个波导由氮化硅材料制成，其最小长度被配置为与用于TM偏振模式的TE偏振模式的耦合长度的两倍的耦合长度相当。 通过使耦合间隙小于/大于标称值来优化第一级方向耦合器，以使至少对于指定波长带的较短/较长波长窗口以及两个第二级定向耦合器中的每一个的TE / TM消光比最大化 通过使耦合间隙大于/小于标称值来优化，以使至少对于相同指定波长带的互补较长/较短波长窗口最大化TE / TM消光比。
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公开(公告)号：US10262983B2
公开(公告)日：2019-04-16
申请号：US15979046
申请日：2018-05-14
Applicant: INPHI CORPORATION
Inventor： Jie Lin , Masaki Kato
IPC: G02B6/12 , H01L27/02 , G02B6/42 , H01L31/02 , H01L31/0224 , H01L27/144 , H01L31/0232 , H01L31/028 , H01L31/103 , H01L31/18
Abstract: An integrated photo detector with enhanced electrostatic discharge damage (ESD) protection. The integrated photo detector includes a first photodiode formed in the SOI substrate and associated with a first p-electrode and a first n-electrode. Additionally, the integrated photo detector includes a second photodiode formed in the SOI substrate associated with a second p-electrode and a second n-electrode forming a capacitance no larger than a few femto Faradays. Moreover, the integrated photo detector includes a first electrode and a second electrode disposed respectively on the SOI substrate. The first/second electrode is respectively connected to the first p/n-electrode via a first/second metallic layer patterned with a reduced width from the first/second electrode to the first p/n-electrode and connected to the second p/n-electrode via a first/second metallic wire to make a parallel coupling between the first photodiode and the second photodiode with an ESD threshold of about 100V.
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