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公开(公告)号：US10580885B1
公开(公告)日：2020-03-03
申请号：US16557284
申请日：2019-08-30
申请人： Ideal Power, Inc.
IPC分类号： H03K17/66 , H01L29/747 , H01L29/40 , H01L29/06 , H01L29/732 , H01L29/423 , H01L29/10 , H01L29/70
摘要： Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion. This provides a surprising improvement in turn-off performance, and in breakdown voltage.
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公开(公告)号：US20180130898A1
公开(公告)日：2018-05-10
申请号：US15604822
申请日：2017-05-25
申请人： Ideal Power, Inc.
IPC分类号： H01L29/747 , H01L29/74 , H01L29/06 , H01L29/40 , H01L29/66
CPC分类号： H01L29/747 , H01L29/0623 , H01L29/0649 , H01L29/0696 , H01L29/1004 , H01L29/16 , H01L29/404 , H01L29/407 , H01L29/408 , H01L29/66234 , H01L29/66295 , H01L29/66386 , H01L29/705 , H01L29/73 , H01L29/732 , H01L29/7424
摘要： The present application teaches, among other innovations, power semiconductor devices in which breakdown initiation regions, on BOTH sides of a die, are located inside the emitter/collector regions, but laterally spaced away from insulated trenches which surround the emitter/collector regions. Preferably this is part of a symmetrically-bidirectional power device of the “B-TRAN” type. In one advantageous group of embodiments (but not all), the breakdown initiation regions are defined by dopant introduction through the bottom of trench portions which lie within the emitter/collector region. In one group of embodiments (but not all), these can advantageously be separated trench portions which are not continuous with the trench(es) surrounding the emitter/collector region(s).
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公开(公告)号：US09742385B2
公开(公告)日：2017-08-22
申请号：US15213389
申请日：2016-07-18
申请人： Ideal Power Inc.
发明人： William C. Alexander
IPC分类号： H01L29/732 , H03K5/08 , H01L29/872 , H01L29/747 , H03K17/74 , H01L29/417 , H01L29/423 , H01L29/73 , H01L29/737 , H01L29/739 , H01L29/74 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/16 , H03K17/68
CPC分类号： H03K5/08 , H01L29/0619 , H01L29/0804 , H01L29/0817 , H01L29/0821 , H01L29/1004 , H01L29/16 , H01L29/1604 , H01L29/41708 , H01L29/42304 , H01L29/73 , H01L29/732 , H01L29/7375 , H01L29/7393 , H01L29/7395 , H01L29/7416 , H01L29/747 , H01L29/872 , H03K17/68 , H03K17/74 , H03K2217/0009
摘要： A symmetrically-bidirectional bipolar transistor circuit where the two base contact regions are clamped, through a low-voltage diode and a resistive element, to avoid bringing either emitter junction to forward bias. This avoids bipolar gain in the off state, and thereby avoids reduction of the withstand voltage due to bipolar gain.
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公开(公告)号：US09520764B1
公开(公告)日：2016-12-13
申请号：US14182277
申请日：2014-02-17
申请人： Ideal Power, Inc.
CPC分类号： H02M5/225 , H02M1/08 , H02M3/1582 , H02M3/33507 , H02M3/33584 , H02M5/293 , H02M5/297 , H02M5/458 , H02M7/4807 , H02M7/797 , H02M2007/4815 , Y02B70/1441
摘要： Methods and systems for bi-directional multi-port power conversion systems and applications are disclosed. In some sample embodiments, current-modulating power converters can be used to provide conversion between synchronous and asynchronous power. In some sample embodiments, current-modulating power converters can perform power conversion can be performed to and from three-phase AC with an active neutral line. In some sample embodiments, current-modulating power converters can convert between synchronous and asynchronous power and also support three-phase AC with active neutral.
摘要翻译： 公开了用于双向多端口功率转换系统和应用的方法和系统。 在一些示例性实施例中，电流调制功率转换器可用于提供同步和异步功率之间的转换。 在一些示例性实施例中，电流调制功率转换器可以执行功率转换，其可以与具有活动中性线的三相AC执行。 在一些示例实施例中，电流调制功率转换器可以在同步和异步电源之间转换，并且还支持具有有效中性点的三相AC。
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公开(公告)号：US20160344300A1
公开(公告)日：2016-11-24
申请号：US15158553
申请日：2016-05-18
申请人： Ideal Power Inc.
发明人： William C. Alexander
CPC分类号： H02M5/293 , B60L53/20 , H02M5/4585 , H02M7/4807 , H03K17/68 , Y02T10/7072 , Y02T90/127 , Y02T90/14
摘要： The present application teaches configurations in which the multiple-ON-mode bidirectional bipolar switch is used to provide very simple circuit configurations which can—when requirements are not stringent—perform certain electrical conversions which might otherwise require a PPSA (Power Packet Switching Architecture) converter.
摘要翻译： 本申请教导了多导通模式双向双极开关用于提供非常简单的电路配置的配置，其可以在需求不严格地执行某些电转换时，否则可能需要PPSA（功率分组交换架构）转换器 。
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6.发明申请Technique that Patterns Both Sides of a Thin Wafer to Fabricate Bi-Directional Devices 审中-公开模拟薄晶片的两面以制造双向器件的技术公开(公告)号：US20160322256A1
公开(公告)日：2016-11-03
申请号：US15055514
申请日：2016-02-26
申请人： Ideal Power Inc.
IPC分类号： H01L21/78 , H01L21/304 , H01L21/683 , H01L21/306
CPC分类号： H01L21/78 , H01L21/6835 , H01L21/6836 , H01L23/544 , H01L2221/68327 , H01L2223/54426 , H01L2223/54453
摘要： Methods and systems for fabricating bidirectional devices on both surfaces of a semiconductor wafer. Separation of the second handle wafer is accomplished by patterning a seal layer to form a grid before the second handle wafer is separated.
摘要翻译： 用于在半导体晶片的两个表面上制造双向器件的方法和系统。 通过在第二处理晶片分离之前图案化密封层以形成栅格来实现第二处理晶片的分离。
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公开(公告)号：US09397580B1
公开(公告)日：2016-07-19
申请号：US14183259
申请日：2014-02-18
申请人： Ideal Power, Inc.
发明人： William C. Alexander
CPC分类号： H02M5/225 , H02M1/12 , H02M1/15 , H02M1/4233 , H02M3/1582 , H02M3/33584 , H02M7/797 , H02M2001/0058 , H02M2001/0067 , H02M2003/1586 , H02M2007/4815 , Y02B70/1441 , Y02B70/1491
摘要： Methods and systems for transforming electric power between two or more portals using multiple power modules. Any or all portals can be DC, single phase AC, or multi-phase AC. Individual power modules comprise a plurality of bi-directional conducting and blocking semiconductor switches, and an inductor and parallel capacitor (reactance). The switches alternately connect the reactance between said portals, such that energy is transferred into the inductor from one or more input portals and/or phases, then transferred out of the inductor to one or more output portals and/or phases, with said parallel capacitor facilitating “soft” turn-off, and with any excess inductor energy being returned to the input. Dual power modules can operate 90 degrees out of phase. This configuration allows use of the same I/O filter capacitors as with a single power module, while achieving twice the total power produced by the power converter, reducing ripple voltage and doubling ripple frequency.
摘要翻译： 使用多个电源模块在两个或多个门户之间转换电力的方法和系统。 任何或所有门户都可以是直流，单相交流或多相交流。 单独的功率模块包括多个双向导通和阻塞半导体开关，以及电感器和并联电容器（电抗）。 开关交替地连接所述入口之间的电抗，使得能量从一个或多个输入端口和/或相位传递到电感器中，然后从所述电感器传送到一个或多个输出端口和/或相位，所述并联电容器 促进“软”关断，并且任何多余的电感能量返回到输入。 双电源模块可以相位操作90度。 该配置允许使用与单个功率模块相同的I / O滤波电容器，同时实现功率转换器产生的总功率的两倍，减少纹波电压和倍增纹波频率。
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8.发明申请Variable-Voltage Self-Synchronizing Rectifier Circuits, Methods, and Systems 审中-公开可变电压自同步整流电路，方法和系统公开(公告)号：US20160204714A1
公开(公告)日：2016-07-14
申请号：US14935336
申请日：2015-11-06
申请人： Ideal Power Inc.
发明人： William C. Alexander
IPC分类号： H02M7/219
CPC分类号： H03K17/66 , H01L27/0694 , H01L29/0804 , H01L29/0821 , H01L29/1004 , H01L29/1095 , H01L29/7302 , H01L29/732 , H01L29/735 , H01L29/7412 , H01L29/7416 , H01L29/747 , H01L29/872 , H02M1/08 , H02M7/219 , H02M2007/2195 , H03K17/60 , H03K17/602 , H03K17/687 , H03K2217/0054
摘要： The present application teaches, among other innovations, methods and circuits for operating a B-TRAN (double-base bidirectional bipolar junction transistor). A base drive circuit is described which provides high-impedance drive to the base contact region on whichever side of the device is operating as the collector (at a given moment). (The B-TRAN, unlike other bipolar junction transistors, is controlled by applied voltage rather than applied current.) The preferred implementation of the drive circuit is operated by control signals to provide diode-mode turn-on and pre-turnoff operation, as well as a hard ON state with a low voltage drop (the “transistor-ON” state). In some but not necessarily all preferred embodiments, an adjustable low voltage for the gate drive circuit is provided by a self-synchronizing rectifier circuit. Also, in some but not necessarily all preferred embodiments, the base drive voltage used to drive the c-base region (on the collector side) is varied while the base current at that terminal is monitored, so that no more base current than necessary is applied. This solves the difficult challenge of optimizing base drive in a B-TRAN.
摘要翻译： 除了其他创新之外，本申请教导了用于操作B-TRAN（双基极双极结型晶体管）的方法和电路。 描述了一种基本驱动电路，其在设备的任何一侧作为收集器（在给定时刻）提供对基底接触区域的高阻抗驱动。 （B-TRAN与其他双极结型晶体管不同，由施加的电压而不是施加的电流控制。）驱动电路的优选实现由控制信号操作，以提供二极管模式导通和预关断操作，如 以及具有低电压降（“晶体管接通”状态）的硬导通状态。 在一些但不一定所有的优选实施例中，栅极驱动电路的可调低电压由自同步整流电路提供。 此外，在一些但不一定所有优选实施例中，用于驱动c-基极区域（集电极侧）的基极驱动电压在监测该端子处的基极电流的同时被改变，使得不再需要基极电流 应用。 这解决了在B-TRAN中优化基础驱动的困难挑战。
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9.发明申请Smart Transfer Switch Devices, Systems, and Methods Using Double-Base Bipolar Transistors 审中-公开智能转换开关器件，系统和使用双基极双极晶体管的方法公开(公告)号：US20160197517A1
公开(公告)日：2016-07-07
申请号：US14930627
申请日：2015-11-02
申请人： Ideal Power Inc.
IPC分类号： H02J9/06
CPC分类号： H02J9/06 , H02J3/32 , H02J3/382 , H02M5/297 , H02M7/4807 , H02M2005/2932 , Y02B10/72 , Y02E70/30
摘要： Methods and systems for smart transfer switch circuits and operation, and for operation of transfer and/or cutoff switches in combination with a power-packet-switching-architecture (PPSA) power converter. The transistors of the transfer and cutoff switches, and the transistors of the phase legs of the PPSA power converter if present, preferably all use double-base bipolar transistors which have low on-state series resistance as the switching elements.
摘要翻译： 用于智能转移开关电路和操作的方法和系统，以及与功率分组交换架构（PPSA）功率转换器结合的传输和/或截止开关的操作。 转移和截止开关的晶体管以及PPSA功率转换器的相位柱的晶体管（如果存在）优选地全部使用具有低导通状态串联电阻的双基极双极晶体管作为开关元件。
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10.发明申请Bidirectional Power Switching with Bipolar Conduction and with Two Control Terminals Gated by Two Merged Transistors 审中-公开双向导通双向功率开关和两个合并晶体管门控两个控制端子公开(公告)号：US20160181409A1
公开(公告)日：2016-06-23
申请号：US14918440
申请日：2015-10-20
申请人： Ideal Power Inc.
IPC分类号： H01L29/747 , H01L29/40
CPC分类号： H01L29/747 , H01L29/0649 , H01L29/407 , H01L29/42304 , H01L29/73 , H01L29/732 , H01L29/7325
摘要： Power semiconductor devices, methods, and systems, in which additional switches are added on both surfaces of a two-sided power device with bidirectional conduction. The additional switches are preferably vertical trench MOS transistors, and permit the emitter-base junction on either surface to be shunted easily.
摘要翻译： 功率半导体器件，方法和系统，其中在具有双向导通的双面功率器件的两个表面上添加附加开关。 附加的开关优选是垂直沟槽MOS晶体管，并且允许任一表面上的发射极 - 基极接头容易分流。
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