公开(公告)号：US20130180947A1

公开(公告)日：2013-07-18

申请号：US13588825

申请日：2012-08-17

申请人： In-Bae KIM ,  Jae-Woo JEONG ,  Sang-Gab KIM ,  Ji-Young PARK ,  Jong-Hyun CHOUNG ,  Seon-il KIM ,  Yong-Sung SONG ,  Jong-Hyun OH

发明人： In-Bae KIM ,  Jae-Woo JEONG ,  Sang-Gab KIM ,  Ji-Young PARK ,  Jong-Hyun CHOUNG ,  Seon-il KIM ,  Yong-Sung SONG ,  Jong-Hyun OH

IPC分类号： C09K13/06 ,  H01B13/00 ,  C09K13/00

CPC分类号： C09K13/06 ,  H01L27/124 ,  H01L27/1259

摘要： An etching composition that includes, based on the total weight of the etching composition, from about 0.05% to about 15% by weight of a halogen-containing compound, from about 0.1% to about 20% by weight of a nitrate compound, from about 0.1% to about 10% by weight of an acetate compound, from about 0.1% to about 10% by weight of a cyclic amine compound, from about 0% to about 50% by weight of a polyhydric alcohol, and a remainder of water.

摘要翻译： 一种蚀刻组合物，其基于蚀刻组合物的总重量计包含约0.05重量％至约15重量％的含卤素化合物，约0.1重量％至约20重量％的硝酸盐化合物，约为 0.1重量％至约10重量％的乙酸酯化合物，约0.1重量％至约10重量％的环胺化合物，约0重量％至约50重量％的多元醇，剩余的水。

公开(公告)号：US20110256712A1

公开(公告)日：2011-10-20

申请号：US12857959

申请日：2010-08-17

申请人： Byeong-Jin LEE ,  Hong-Sick PARK ,  Tai-Hyung RHEE ,  Yong-Sung SONG ,  Choung-Woo PARK ,  Jong-Hyun OH

发明人： Byeong-Jin LEE ,  Hong-Sick PARK ,  Tai-Hyung RHEE ,  Yong-Sung SONG ,  Choung-Woo PARK ,  Jong-Hyun OH

IPC分类号： H01L21/768 ,  C09K13/08 ,  C09K13/10 ,  C09K13/00

CPC分类号： C09K13/10 ,  C23F1/10 ,  C23F1/44 ,  H01L21/32134 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/4908

摘要： The present invention relates to an etchant for etching metal wiring, and the metal wiring etchant according to the present invention includes hydrogen peroxide at about 5 wt % to about 15 wt %, an oxidant at about 0.5 wt % to about 5 wt %, a fluoride-based compound at about 0.1 wt % to about 1 wt %, a nitrate-based compound at about 0.5 wt % to about 5 wt %, and a boron-based compound at about 0.05 wt % to about 1 wt %.

摘要翻译： 本发明涉及用于蚀刻金属布线的蚀刻剂，根据本发明的金属布线蚀刻剂包括约5重量％至约15重量％的过氧化氢，约0.5重量％至约5重量％的氧化剂， 约0.1重量％至约1重量％的氟化物基化合物，约0.5重量％至约5重量％的硝酸盐基化合物和约0.05重量％至约1重量％的硼基化合物。

公开(公告)号：US20110177680A1

公开(公告)日：2011-07-21

申请号：US12902018

申请日：2010-10-11

申请人： Byeong-Jin LEE ,  Hong Sik PARK ,  Tai-Hyung RHEE ,  Yong-Sung SONG ,  Choung-Woo PARK ,  Chang-Ho LEE

发明人： Byeong-Jin LEE ,  Hong Sik PARK ,  Tai-Hyung RHEE ,  Yong-Sung SONG ,  Choung-Woo PARK ,  Chang-Ho LEE

IPC分类号： H01L21/20 ,  C09K13/00 ,  C09K13/08

CPC分类号： H01L21/32134 ,  C09K13/08 ,  C23F1/18 ,  C23F1/26 ,  C23F1/44

摘要： The present invention relates to an etchant for wet etching a wiring that includes copper, where the etchant includes approximately 5 to approximately 25 wt % of a peroxide, approximately 0.5 to approximately 5 wt % of an oxidant, approximately 0.1 to approximately 1 wt % of a fluoride-based compound and approximately 1 to approximately 10 wt % of a glycol. The etchant can provide an etching rate that is suitable to many processes, and produces an appropriate etching amount as well as an appropriate taper angle.In addition, the etchant exhibits advantages including relatively low viscosity as compared to phosphoric acid-based etchants, relatively uniform etching characteristics, and relative stability as compared to peroxide-based etchants.

摘要翻译： 本发明涉及用于湿蚀刻包括铜的布线的蚀刻剂，其中蚀刻剂包括约5至约25重量％的过氧化物，约0.5至约5重量％的氧化剂，约0.1至约1重量％的氧化剂， 氟化物基化合物和约1至约10重量％的二醇。 蚀刻剂可以提供适合于许多工艺的蚀刻速率，并且产生适当的蚀刻量以及适当的锥角。 此外，与基于磷酸的蚀刻剂相比，蚀刻剂具有相对低的粘度，相对均匀的蚀刻特性以及与基于过氧化物的蚀刻剂相比的相对稳定性的优点。