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公开(公告)号：US09041163B2
公开(公告)日：2015-05-26
申请号：US14033524
申请日：2013-09-23
Applicant: Industrial Technology Research Institute
Inventor： Shang-Chun Chen , Cha-Hsin Lin , Yu-Chen Hsin
IPC: H01L21/768 , H01L23/48
CPC classification number: H01L21/76898 , H01L21/3065 , H01L21/30655 , H01L23/481 , H01L24/05 , H01L24/13 , H01L2224/02372 , H01L2224/0401 , H01L2224/05009 , H01L2224/05548 , H01L2224/05568 , H01L2224/0557 , H01L2224/05647 , H01L2224/05655 , H01L2224/1134 , H01L2224/13 , H01L2224/13023 , H01L2224/13024 , H01L2224/13147 , H01L2224/13155 , H01L2924/0002 , H01L2924/00 , H01L2924/00014
Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a substrate, a device layer and a least one conductive post. The substrate includes a first surface, a second surface opposite to the first surface, and at least one through hole penetrating the substrate. The substrate includes a first side wall portion and a second side wall portion at the through hole. The first side wall portion is connected to the first surface and includes a plurality of first scallops. The second side wall portion is connected to the second surface and includes a non-scalloped surface. The device layer is disposed on the second surface, and the second side wall portion of the substrate further extends into the device layer along the non-scalloped surface. The conductive post is disposed in the through hole, wherein the conductive post is electrically connected to the device layer.
Abstract translation: 提供半导体结构及其制造方法。 半导体结构包括衬底，器件层和至少一个导电柱。 衬底包括第一表面，与第一表面相对的第二表面和穿透衬底的至少一个通孔。 基板包括在通孔处的第一侧壁部分和第二侧壁部分。 第一侧壁部分连接到第一表面并且包括多个第一扇贝。 第二侧壁部分连接到第二表面并且包括非扇形表面。 器件层设置在第二表面上，并且衬底的第二侧壁部分还沿着非扇形表面延伸到器件层中。 导电柱设置在通孔中，其中导电柱电连接到器件层。
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公开(公告)号：US20180067175A1
公开(公告)日：2018-03-08
申请号：US15394836
申请日：2016-12-30
Applicant: Industrial Technology Research Institute
Inventor： Hsin-Han Lee , Yu-Sheng Chen , Ding-Yeong Wang , Yu-Chen Hsin
IPC: G01R33/12
Abstract: A biomolecule magnetic sensor configured to sense magnetic beads attached with biomolecules includes an adsorption pad, a magnetic field line generator and at least one magnetic sensor. The adsorption pad is configured to adsorb the magnetic beads. The magnetic field line generator is configured to generate a plurality of first magnetic field lines, and at least one of the first magnetic field lines passes through the magnetic beads along a first direction to induce a plurality of second magnetic field lines, wherein the magnetic field line generator is disposed between the adsorption pad and the magnetic sensor in the first direction. The magnetic sensor is configured to sense a magnetic field component of at least one of the second magnetic field lines in a second direction. A second shift is provided between the magnetic sensor and the adsorption pad in the second direction.
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公开(公告)号：US09257337B2
公开(公告)日：2016-02-09
申请号：US14574348
申请日：2014-12-17
Applicant: Industrial Technology Research Institute
Inventor： Shang-Chun Chen , Cha-Hsin Lin , Yu-Chen Hsin
IPC: H01L21/768 , H01L23/48 , H01L21/3065 , H01L21/822 , H01L23/00
CPC classification number: H01L21/76898 , H01L21/3065 , H01L21/30655 , H01L21/8221 , H01L23/481 , H01L24/05 , H01L24/13 , H01L24/80 , H01L25/0657 , H01L25/50 , H01L2224/02372 , H01L2224/05548 , H01L2224/05568 , H01L2224/0557 , H01L2224/05647 , H01L2224/05655 , H01L2224/13023 , H01L2224/13024 , H01L2224/13147 , H01L2224/13155 , H01L2224/9202 , H01L2224/94 , H01L2225/06541 , H01L2224/80001
Abstract: A method for fabricating a semiconductor device is provided. The method includes: providing a first wafer having a first active surface and a first rear surface opposite to the first active surface, the first wafer comprising a first circuit formed therein; providing a second wafer having a second active surface and a second rear surface opposite to the second active surface, the second wafer comprising a second circuit formed therein; bonding the first active surface of the first wafer with the second active surface of the second wafer so as to electrically connecting the first circuit and the second circuit; thinning the second wafer from the second rear surface; and forming at least a conductive through via in the second wafer, wherein the conductive through via is electrically connected to the first circuit through the second circuit.
Abstract translation: 提供一种制造半导体器件的方法。 该方法包括：提供具有第一有源表面和与第一有源表面相对的第一后表面的第一晶片，所述第一晶片包括形成在其中的第一电路; 提供具有第二有源表面和与所述第二有源表面相对的第二后表面的第二晶片，所述第二晶片包括形成在其中的第二电路; 将第一晶片的第一有源表面与第二晶片的第二有源表面接合，以便电连接第一电路和第二电路; 从第二后表面减薄第二晶片; 以及在所述第二晶片中至少形成导电通孔，其中所述导电通孔通过所述第二电路电连接到所述第一电路。
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Patent Agency Ranking
公开(公告)号：US10725126B2
公开(公告)日：2020-07-28
申请号：US15394836
申请日：2016-12-30
Applicant: Industrial Technology Research Institute
Inventor： Hsin-Han Lee , Yu-Sheng Chen , Ding-Yeong Wang , Yu-Chen Hsin
Abstract: A biomolecule magnetic sensor configured to sense magnetic beads attached with biomolecules includes an adsorption pad, a magnetic field line generator and at least one magnetic sensor. The adsorption pad is configured to adsorb the magnetic beads. The magnetic field line generator is configured to generate a plurality of first magnetic field lines, and at least one of the first magnetic field lines passes through the magnetic beads along a first direction to induce a plurality of second magnetic field lines, wherein the magnetic field line generator is disposed between the adsorption pad and the magnetic sensor in the first direction. The magnetic sensor is configured to sense a magnetic field component of at least one of the second magnetic field lines in a second direction. A second shift is provided between the magnetic sensor and the adsorption pad in the second direction.
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公开(公告)号：US20140312468A1
公开(公告)日：2014-10-23
申请号：US14033524
申请日：2013-09-23
Applicant: Industrial Technology Research Institute
Inventor： Shang-Chun Chen , Cha-Hsin Lin , Yu-Chen Hsin
IPC: H01L21/768 , H01L23/48
CPC classification number: H01L21/76898 , H01L21/3065 , H01L21/30655 , H01L23/481 , H01L24/05 , H01L24/13 , H01L2224/02372 , H01L2224/0401 , H01L2224/05009 , H01L2224/05548 , H01L2224/05568 , H01L2224/0557 , H01L2224/05647 , H01L2224/05655 , H01L2224/1134 , H01L2224/13 , H01L2224/13023 , H01L2224/13024 , H01L2224/13147 , H01L2224/13155 , H01L2924/0002 , H01L2924/00 , H01L2924/00014
Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a substrate, a device layer and a least one conductive post. The substrate includes a first surface, a second surface opposite to the first surface, and at least one through hole penetrating the substrate. The substrate includes a first side wall portion and a second side wall portion at the through hole. The first side wall portion is connected to the first surface and includes a plurality of first scallops. The second side wall portion is connected to the second surface and includes a non-scalloped surface. The device layer is disposed on the second surface, and the second side wall portion of the substrate further extends into the device layer along the non-scalloped surface. The conductive post is disposed in the through hole, wherein the conductive post is electrically connected to the device layer.
Abstract translation: 提供半导体结构及其制造方法。 半导体结构包括衬底，器件层和至少一个导电柱。 衬底包括第一表面，与第一表面相对的第二表面和穿透衬底的至少一个通孔。 基板包括在通孔处的第一侧壁部分和第二侧壁部分。 第一侧壁部分连接到第一表面并且包括多个第一扇贝。 第二侧壁部分连接到第二表面并且包括非扇形表面。 器件层设置在第二表面上，并且衬底的第二侧壁部分还沿着非扇形表面延伸到器件层中。 导电柱设置在通孔中，其中导电柱电连接到器件层。
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公开(公告)号：US12300292B2
公开(公告)日：2025-05-13
申请号：US18146255
申请日：2022-12-23
Applicant: Industrial Technology Research Institute
Inventor： Hsin-Han Lee , Jeng-Hua Wei , Shan-Yi Yang , Yu-Chen Hsin
Abstract: A magnetic random access memory (MRAM) structure is provided. The MRAM structure includes a first write electrode, a first magnetic tunnel junction (MTJ) stack, a voltage control electrode, a second MTJ stack, and a second write electrode. The first MTJ stack includes a first free layer disposed on the first write electrode, a first tunnel barrier layer disposed on the first free layer, and a first fixed layer disposed on the first tunnel barrier layer. The voltage control electrode is disposed on the first MTJ stack. The second MTJ stack includes a second fixed layer disposed on the voltage control electrode, a second tunnel barrier layer disposed on the second fixed layer, and a second free layer disposed on the second tunnel barrier layer. The second write electrode is disposed on the second MTJ stack.
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公开(公告)号：US10416114B2
公开(公告)日：2019-09-17
申请号：US15352242
申请日：2016-11-15
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Jui-Chin Chen , Pei-Jer Tzeng , Tzu-Kun Ku , Yu-Chen Hsin , Yiu-Hsiang Chang
IPC: G01N27/403 , G01N27/417 , G01N33/483 , G01N33/487 , G01N27/27 , G01N27/327
Abstract: A structure of an electrochemical unit includes a substrate, a first metal layer disposed on the substrate, and an array of electrochemical cells disposed on the first metal layer. The array of the electrochemical cells includes a plurality of electrochemical cells. Each of the electrochemical cells includes the first metal layer disposed on the substrate, a first electrode disposed on the first metal layer, a polymer layer disposed on the substrate and adjacent to the first metal layer and the first electrode. A second metal layer is disposed on the polymer layer, and a second electrode is disposed on the second metal layer. A pore is constituted between the polymer layers of every the two electrochemical cells. A cavity located above the first electrode is defined between every the two electrochemical cells, wherein the cavity is communicated with the pore.
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公开(公告)号：US20150104927A1
公开(公告)日：2015-04-16
申请号：US14574348
申请日：2014-12-17
Applicant: Industrial Technology Research Institute
Inventor： Shang-Chun Chen , Cha-Hsin Lin , Yu-Chen Hsin
IPC: H01L21/768
CPC classification number: H01L21/76898 , H01L21/3065 , H01L21/30655 , H01L21/8221 , H01L23/481 , H01L24/05 , H01L24/13 , H01L24/80 , H01L25/0657 , H01L25/50 , H01L2224/02372 , H01L2224/05548 , H01L2224/05568 , H01L2224/0557 , H01L2224/05647 , H01L2224/05655 , H01L2224/13023 , H01L2224/13024 , H01L2224/13147 , H01L2224/13155 , H01L2224/9202 , H01L2224/94 , H01L2225/06541 , H01L2224/80001
Abstract: A method for fabricating a semiconductor device is provided. The method includes: providing a first wafer having a first active surface and a first rear surface opposite to the first active surface, the first wafer comprising a first circuit formed therein; providing a second wafer having a second active surface and a second rear surface opposite to the second active surface, the second wafer comprising a second circuit formed therein; bonding the first active surface of the first wafer with the second active surface of the second wafer so as to electrically connecting the first circuit and the second circuit; thinning the second wafer from the second rear surface; and forming at least a conductive through via in the second wafer, wherein the conductive through via is electrically connected to the first circuit through the second circuit.
Abstract translation: 提供一种制造半导体器件的方法。 该方法包括：提供具有第一有源表面和与第一有源表面相对的第一后表面的第一晶片，所述第一晶片包括形成在其中的第一电路; 提供具有第二有源表面和与所述第二有源表面相对的第二后表面的第二晶片，所述第二晶片包括形成在其中的第二电路; 将第一晶片的第一有源表面与第二晶片的第二有源表面接合，以便电连接第一电路和第二电路; 从第二后表面减薄第二晶片; 以及在所述第二晶片中至少形成导电通孔，其中所述导电通孔通过所述第二电路电连接到所述第一电路。
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