公开(公告)号：US11264464B2

公开(公告)日：2022-03-01

申请号：US16576042

申请日：2019-09-19

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Thomas Basler ,  Andre Rainer Stegner

IPC: H01L29/167 ,  H01L29/16 ,  H01L29/739

Abstract: A silicon carbide device includes a transistor cell with a front side doping region, a body region, and a drift region. The body region includes a first portion having a first average net doping concentration and a second portion having a second average net doping concentration. The first portion and the second portion have an extension of at least 50 nm in a vertical direction. The first average net doping concentration is at least two times the second average net doping concentration, and the first average net doping concentration is at least 1·1017 cm−3.

公开(公告)号：US10943979B2

公开(公告)日：2021-03-09

申请号：US16277227

申请日：2019-02-15

Applicant: Infineon Technologies AG

Inventor： Andre Rainer Stegner ,  Hans-Joachim Schulze

IPC: H01L29/16 ,  H01L29/10 ,  H01L29/423 ,  H01L29/861 ,  H01L29/417 ,  H01L29/78 ,  H01L29/167 ,  H01L29/36

Abstract: The disclosure relates to a semiconductor device having a SiC semiconductor body. The SiC semiconductor body includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The first semiconductor region is electrically contacted at a first surface of the SiC semiconductor body and forms a pn junction with the second semiconductor region. The first semiconductor region and the second semiconductor region are arranged one above the other in a vertical direction perpendicular to the first surface. The first semiconductor region has a first dopant species and a second dopant species.

公开(公告)号：US20220199800A1

公开(公告)日：2022-06-23

申请号：US17691251

申请日：2022-03-10

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Jens Peter Konrath ,  Andre Rainer Stegner ,  Helmut Strack

IPC: H01L29/66 ,  H01L29/16 ,  H01L21/02 ,  H01L21/04 ,  H01L29/10 ,  H01L29/78

Abstract: A semiconductor device includes a silicon carbide (SiC) drift zone over a SiC field stop zone and/or a SiC semiconductor substrate. A concentration of Z1/2 defects in the SiC drift zone is at least one order of magnitude smaller than in the SiC field stop zone and/or the SiC semiconductor substrate. Separately or in combination, a concentration of Z1/2 defects in a part of the SiC drift zone is at least one order of magnitude smaller than in another part of the drift zone.

公开(公告)号：US11302795B2

公开(公告)日：2022-04-12

申请号：US16925523

申请日：2020-07-10

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Jens Peter Konrath ,  Andre Rainer Stegner ,  Helmut Strack

IPC: H01L21/02 ,  H01L21/04 ,  H01L29/66 ,  H01L29/78 ,  H01L29/16 ,  H01L29/10

Abstract: A method of manufacturing a semiconductor device is proposed. A silicon carbide, SiC, semiconductor body is provided. Ions are introduced into the SiC semiconductor body through a first surface of the SiC semiconductor body by at least one ion implantation process. Thereafter, a SiC device layer is formed on the first surface of the SiC semiconductor body. Semiconductor device elements are formed in or over the SiC device layer.

公开(公告)号：US11063142B2

公开(公告)日：2021-07-13

申请号：US16721088

申请日：2019-12-19

Applicant: Infineon Technologies AG

Inventor： Jens Peter Konrath ,  Wolfgang Bergner ,  Christian Hecht ,  Hans-Joachim Schulze ,  Andre Rainer Stegner

IPC: H01L29/739 ,  H01L29/16 ,  H01L29/32 ,  H01L29/40 ,  H01L29/66 ,  H01L21/04 ,  H01L29/47

Abstract: A semiconductor device includes a silicon carbide body that includes a first section and a second section. The first section is adjacent to the second section. A drift region is formed in the first section and the second section. A lattice defect region is in a portion of the drift region in the second section. A first density of lattice defects, which include interstitials and vacancies in the lattice defect region, is at least double a second density of lattice defects, which include interstitials and vacancies in a portion of the drift region outside the lattice defect region.

公开(公告)号：US09647100B2

公开(公告)日：2017-05-09

申请号：US14887520

申请日：2015-10-20

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Christian Jaeger ,  Franz Josef Niedernostheide ,  Roman Baburske ,  Andre Rainer Stegner ,  Antonio Vellei

IPC: H01L29/00 ,  H01L29/739 ,  H01L29/06 ,  H01L29/08 ,  H01L29/167 ,  H01L29/66 ,  H01L29/36 ,  H01L29/10

CPC classification number: H01L29/7395 ,  H01L29/0607 ,  H01L29/0696 ,  H01L29/0813 ,  H01L29/0821 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/36 ,  H01L29/66333

Abstract: A semiconductor device includes transistor cells formed along a first surface at a front side of a semiconductor body in a transistor cell area. A drift zone structure forms first pn junctions with body zones of the transistor cells. An auxiliary structure between the drift zone structure and a second surface at a rear side of the semiconductor body includes a first portion that contains deep level dopants requiring at least 150 meV to ionize. A collector structure directly adjoins the auxiliary structure. An injection efficiency of minority carriers from the collector structure into the drift zone structure varies along a direction parallel to the first surface at least in the transistor cell area.

公开(公告)号：US20210013320A1

公开(公告)日：2021-01-14

申请号：US16925523

申请日：2020-07-10

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Jens Peter Konrath ,  Andre Rainer Stegner ,  Helmut Strack

IPC: H01L29/66 ,  H01L29/16 ,  H01L29/78 ,  H01L21/04 ,  H01L29/10 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor device is proposed. A silicon carbide, SiC, semiconductor body is provided. Ions are introduced into the SiC semiconductor body through a first surface of the SiC semiconductor body by at least one ion implantation process. Thereafter, a SiC device layer is formed on the first surface of the SiC semiconductor body. Semiconductor device elements are formed in or over the SiC device layer.

公开(公告)号：US20190157438A1

公开(公告)日：2019-05-23

申请号：US16254235

申请日：2019-01-22

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Philip Christoph Brandt ,  Andre Rainer Stegner

IPC: H01L29/739 ,  H01L29/10 ,  H01L29/167 ,  H01L21/24 ,  H01L21/266 ,  H01L29/66 ,  H01L21/22 ,  H01L21/265

CPC classification number: H01L29/7397 ,  H01L21/22 ,  H01L21/24 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/266 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/18 ,  H01L29/456 ,  H01L29/66348 ,  H01L29/7396

Abstract: Some embodiments relate to a semiconductor device that includes a body region of a field effect transistor structure formed in a semiconductor substrate between a drift region of the field effect transistor structure and a source region of the field effect transistor structure. The semiconductor substrate includes chalcogen atoms at an atom concentration of less than 1×1013 cm−3 at a p-n junction between the body region and the drift region, and at least part of the source region includes chalcogen atoms at an atom concentration of greater than 1×1014 cm−3. Additional semiconductor device embodiments and corresponding methods of manufacture are described.

公开(公告)号：US09443971B2

公开(公告)日：2016-09-13

申请号：US14940797

申请日：2015-11-13

Applicant: Infineon Technologies AG

Inventor： Andreas Haertl ,  Frank Hille ,  Francisco Javier Santos Rodriguez ,  Daniel Schloegl ,  Andre Rainer Stegner ,  Christoph Weiss

IPC: H01L29/00 ,  H01L21/22 ,  H01L21/38 ,  H01L29/78 ,  H01L29/739 ,  H01L29/66 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L29/063 ,  H01L21/26506 ,  H01L21/28568 ,  H01L29/0607 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/32 ,  H01L29/36 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66136 ,  H01L29/66325 ,  H01L29/66333 ,  H01L29/66674 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7801 ,  H01L29/861

Abstract: A semiconductor device includes a diffusion barrier layer, a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers. The first semiconductor region includes a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers, a contact region in contact with the diffusion barrier layer, the contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration, and a damage region between the contact region and the transition region. The damage region is configured for reducing the lifetime and/or the mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region.

Abstract translation: 半导体器件包括扩散阻挡层，具有第一导电类型的第一电荷载流子的第一半导体区域和具有第二电荷载流子的第二半导体区域。 第一半导体区域包括与第二半导体区域接触的过渡区域，过渡区域具有第一电荷载流子的第一浓度，与扩散阻挡层接触的接触区域，接触区域具有第一浓度的第一 电荷载体，其中第二浓度高于第一浓度，以及在接触区域和过渡区域之间的损伤区域。 损伤区域被配置为与接触区域和过渡区域的第一电荷载流子的寿命和/或迁移率相比，减小损伤区域的第一电荷载流子的寿命和/或迁移率。

公开(公告)号：US20140151789A1

公开(公告)日：2014-06-05

申请号：US13690328

申请日：2012-11-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Maria Cotorogea ,  Hans Peter Felsl ,  Yvonne Gawlina ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze ,  Georg Seibert ,  Andre Rainer Stegner ,  Wolfgang Wagner

IPC: H01L27/088 ,  H01L21/8234

CPC classification number: H01L27/088 ,  H01L21/823481 ,  H01L29/0623 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/7813

Abstract: A semiconductor device includes a first transistor cell including a first gate electrode in a first trench. The semiconductor device further includes a second transistor cell including a second gate electrode in a second trench, wherein the first and second gate electrodes are electrically connected. The semiconductor device further includes a third trench between the first and second trenches, wherein the third trench extends deeper into a semiconductor body from a first side of the semiconductor body than the first and second trenches. The semiconductor device further includes a dielectric in the third trench covering a bottom side and walls of the third trench.

Abstract translation: 半导体器件包括在第一沟槽中包括第一栅电极的第一晶体管单元。 半导体器件还包括在第二沟槽中包括第二栅电极的第二晶体管单元，其中第一和第二栅极电连接。 半导体器件还包括在第一和第二沟槽之间的第三沟槽，其中第三沟槽从半导体本体的第一侧比第一和第二沟槽更深地延伸到半导体本体中。 半导体器件还包括覆盖第三沟槽的底侧和第三沟槽壁的第三沟槽中的电介质。