公开(公告)号：US20240040803A1

公开(公告)日：2024-02-01

申请号：US18379423

申请日：2023-10-12

Applicant: Infineon Technologies AG

Inventor： Hans Taddiken ,  Christoph Glacer ,  Dominik Heiss ,  Christoph Kadow

IPC: H10B63/00 ,  H10N70/00 ,  H10N70/20

CPC classification number: H10B63/30 ,  H10N70/021 ,  H10N70/231 ,  H10N70/826

Abstract: An integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch, wherein at least a part of the phase change switch is provided below the first metallization layer, wherein the first metallization layer is provided laterally adjacent to the phase change switch, wherein the phase change switch comprises a heater, and wherein the heater and a part of the transistor are each provided in a lower-level interconnect layer of the integrated circuit.

公开(公告)号：US11818900B2

公开(公告)日：2023-11-14

申请号：US17192979

申请日：2021-03-05

Applicant: Infineon Technologies AG

Inventor： Hans Taddiken ,  Christoph Glacer ,  Dominik Heiss ,  Christoph Kadow

IPC: H10B63/00 ,  H10N70/00 ,  H10N70/20

CPC classification number: H10B63/30 ,  H10N70/021 ,  H10N70/231 ,  H10N70/826

Abstract: An integrated circuit is provided. The integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch. At least a part of the phase change switch is provided below the first metallization layer. The first metallization layer is provided laterally adjacent to the phase change switch. Moreover, a method is provided for manufacturing an integrated circuit. Further provided is a wafer for manufacturing an integrated circuit, and a method for manufacturing a wafer for manufacturing an integrated circuit.

公开(公告)号：US11563174B2

公开(公告)日：2023-01-24

申请号：US16844450

申请日：2020-04-09

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Martin Bartels ,  Christoph Glacer ,  Christoph Kadow ,  Matthias Markert ,  Hans Taddiken ,  Hans-Dieter Wohlmuth

IPC: H01L45/00

Abstract: A switching device includes first and second RF terminals disposed over a substrate, one or more strips of phase change material connected between the first and second RF terminals, a region of thermally insulating material that separates the one or more strips of phase change material from the substrate, and a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material. Each of the one or more strips of phase change material includes a first outer face and a second outer face opposite from the first outer face. For each of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements.

公开(公告)号：US20210280637A1

公开(公告)日：2021-09-09

申请号：US17192979

申请日：2021-03-05

Applicant: Infineon Technologies AG

Inventor： Hans Taddiken ,  Christoph Glacer ,  Dominik Heiss ,  Christoph Kadow

IPC: H01L27/24 ,  H01L45/00

Abstract: An integrated circuit is provided. The integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch. At least a part of the phase change switch is provided below the first metallization layer. The first metallization layer is provided laterally adjacent to the phase change switch. Moreover, a method is provided for manufacturing an integrated circuit. Further provided is a wafer for manufacturing an integrated circuit, and a method for manufacturing a wafer for manufacturing an integrated circuit.

公开(公告)号：US20160260803A1

公开(公告)日：2016-09-08

申请号：US15157448

申请日：2016-05-18

Applicant: Infineon Technologies AG

Inventor： Thorsten Meyer ,  Stefan Decker ,  Norbert Krischke ,  Christoph Kadow

IPC: H01L29/10 ,  H01L27/088 ,  H01L29/423 ,  H01L21/8234

CPC classification number: H01L29/105 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/823412 ,  H01L21/823807 ,  H01L27/088 ,  H01L29/4236 ,  H01L29/66537 ,  H01L29/78

Abstract: An integrated circuit having field effect transistors and manufacturing method. One embodiment provides an integrated circuit including a first FET and a second FET. At least one of source, drain, gate of the first FET is electrically connected to the corresponding one of source, drain, gate of the second FET. At least one further of source, drain, gate of the first FET and the corresponding one further of source, drain, gate of the second FET are connected to a circuit element, respectively. A dopant concentration of a body along a channel of each of the first and second FETs has a peak at a peak location within the channel.

Abstract translation: 一种具有场效应晶体管和制造方法的集成电路。 一个实施例提供了包括第一FET和第二FET的集成电路。 第一FET的源极，漏极，栅极中的至少一个电连接到第二FET的源极，漏极，栅极中的相应一个栅极。 第一FET的源极，漏极，栅极以及第二FET的源极，漏极，栅极之间的至少另外的栅极分别连接到电路元件。 沿着第一和第二FET中的每一个的通道的主体的掺杂剂浓度在通道内的峰值位置处具有峰值。

公开(公告)号：US20220407004A1

公开(公告)日：2022-12-22

申请号：US17350398

申请日：2021-06-17

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Christoph Kadow ,  Matthias Markert

IPC: H01L45/00 ,  H01L23/66

Abstract: A method of forming a phase change switching device includes providing a substrate, forming first and second RF terminals on the substrate, forming a strip of phase change material on the substrate that is connected between the first and second RF terminals, forming a heating element adjacent to the strip of phase change material such that the heating element is configured to control a conductive state of the strip of phase change material. The first and second RF terminals and the heating element are formed by a lithography process that self-aligns the heating element with the first and second RF terminals

公开(公告)号：US20220199343A1

公开(公告)日：2022-06-23

申请号：US17455595

申请日：2021-11-18

Applicant: Infineon Technologies AG

Inventor： Hans Taddiken ,  Dominik Heiss ,  Christoph Kadow

IPC: H01H37/02

Abstract: A switch device includes a phase change switch and a memory for storing a target state of the phase change switch. A controller determines a phase state of the phase change switch, and, if the state of the phase change switch does not correspond to the target state, controls a heater of the phase change switch to change the state of the phase changes switch to the target state.

公开(公告)号：US20210376234A1

公开(公告)日：2021-12-02

申请号：US17330610

申请日：2021-05-26

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Christoph Kadow ,  Matthias Markert

IPC: H01L45/00

Abstract: A switch device including a semiconductor substrate is provided. A trench is formed in the substrate, and a phase change material is provided at least partially in the trench. A heater for heating the phase change material is also provided.

公开(公告)号：US09299829B2

公开(公告)日：2016-03-29

申请号：US14682755

申请日：2015-04-09

Applicant: Infineon Technologies AG

Inventor： Andreas Peter Meiser ,  Markus Zundel ,  Christoph Kadow

IPC: H01L29/00 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/739 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/40 ,  H01L29/417

CPC classification number: H01L29/7813 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/42392 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7827

Abstract: A vertical transistor component includes a semiconductor body with first and second surfaces, a drift region, and a source region and body region arranged between the drift region and the first surface. The body region is also arranged between the source region and the drift region. The vertical transistor component further includes a gate electrode arranged adjacent to the body zone, a gate dielectric arranged between the gate electrode and the body region, and a drain region arranged between the drift region and the second surface. A source electrode electrically contacts the source region, is electrically insulated from the gate electrode and arranged on the first surface. A drain electrode electrically contacts the drain region and is arranged on the second surface. A gate contact electrode is electrically insulated from the semiconductor body, extends in the semiconductor body to the second surface, and is electrically connected with the gate electrode.

公开(公告)号：US12068123B2

公开(公告)日：2024-08-20

申请号：US17455595

申请日：2021-11-18

Applicant: Infineon Technologies AG

Inventor： Hans Taddiken ,  Dominik Heiss ,  Christoph Kadow

IPC: H01H47/26 ,  H01H37/02 ,  H01H50/12

CPC classification number: H01H37/02

Abstract: A switch device includes a phase change switch and a memory for storing a target state of the phase change switch. A controller determines a phase state of the phase change switch, and, if the state of the phase change switch does not correspond to the target state, controls a heater of the phase change switch to change the state of the phase changes switch to the target state.