公开(公告)号：US10854669B2

公开(公告)日：2020-12-01

申请号：US16909745

申请日：2020-06-23

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

公开(公告)号：US09905609B2

公开(公告)日：2018-02-27

申请号：US15637478

申请日：2017-06-29

Applicant: Infineon Technologies AG

Inventor： Dirk Offenberg ,  Henning Feick ,  Stefano Parascandola

IPC: H01L27/00 ,  H01L27/148 ,  H01L27/146 ,  G01S7/486 ,  H04N5/369

CPC classification number: H01L27/14856 ,  G01S7/4865 ,  G01S7/4914 ,  H01L27/14601 ,  H01L27/14683 ,  H04N5/369

Abstract: Embodiments related to the manufacturing of an imager device and an imager device are disclosed. Embodiments associated with methods of an imager device are also disclosed.

公开(公告)号：US09882600B2

公开(公告)日：2018-01-30

申请号：US14172925

申请日：2014-02-05

Applicant: Infineon Technologies AG

Inventor： Christian Kuehn ,  Martin Bartels ,  Henning Feick ,  Dirk Offenberg ,  Anton Steltenpohl ,  Hans Taddiken ,  Ines Uhlig

IPC: H04B1/00 ,  H04B1/44 ,  H01L21/324 ,  H01L29/78 ,  H01L29/10

CPC classification number: H04B1/44 ,  H01L21/324 ,  H01L29/1079 ,  H01L29/78

Abstract: According to various embodiments, a switching device may include: an antenna terminal; a switch including a first switch terminal and a second switch terminal, the first switch terminal coupled to the antenna terminal, the switch including at least one transistor at least one of over or in a silicon region including an oxygen impurity concentration of smaller than about 3×1017 atoms per cm3; and a transceiver terminal coupled to the second switch terminal, wherein the transceiver terminal is at least one of configured to provide a signal received via the antenna terminal or configured to receive a signal to be transmitted via the antenna terminal.

公开(公告)号：US20170358697A1

公开(公告)日：2017-12-14

申请号：US15688356

申请日：2017-08-28

Applicant: Infineon Technologies AG

Inventor： Thomas BEVER ,  Henning Feick ,  Dirk Offenberg ,  Stefano Parascandola ,  Ines Uhlig ,  Thoralf Kautzsch ,  Dirk Meinhold ,  Hanno Melzner

IPC: H01L31/0352 ,  G01S7/491 ,  H01L27/148

CPC classification number: H01L31/035272 ,  G01S7/4914 ,  H01L27/14806

Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region

公开(公告)号：US09659992B2

公开(公告)日：2017-05-23

申请号：US14186390

申请日：2014-02-21

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14687 ,  H01L27/14806

Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

公开(公告)号：US20200006418A1

公开(公告)日：2020-01-02

申请号：US16566171

申请日：2019-09-10

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

公开(公告)号：US10008621B2

公开(公告)日：2018-06-26

申请号：US15688356

申请日：2017-08-28

Applicant: Infineon Technologies AG

Inventor： Thomas Bever ,  Henning Feick ,  Dirk Offenberg ,  Stefano Parascandola ,  Ines Uhlig ,  Thoralf Kautzsch ,  Dirk Meinhold ,  Hanno Melzner

IPC: H01L31/0352 ,  H01L27/148 ,  G01S7/491

CPC classification number: H01L31/035272 ,  G01S7/4914 ,  H01L27/14806

Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.

公开(公告)号：US09984917B2

公开(公告)日：2018-05-29

申请号：US14283242

申请日：2014-05-21

Applicant: Infineon Technologies AG

Inventor： Christian Kuehn ,  Martin Bartels ,  Henning Feick ,  Dirk Offenberg ,  Anton Steltenpohl ,  Hans Taddiken ,  Ines Uhlig

IPC: H01L21/76 ,  H01L21/762 ,  H01L29/06 ,  H01L21/265

CPC classification number: H01L21/76237 ,  H01L21/26506 ,  H01L21/2652 ,  H01L21/26586 ,  H01L29/0607 ,  H01L29/0649

Abstract: A method for manufacturing a semiconductor device in accordance with various embodiments may include: forming an opening in a first region of a semiconductor substrate, the opening having at least one sidewall and a bottom; implanting dopant atoms into the at least one sidewall and the bottom of the opening; configuring at least a portion of a second region of the semiconductor substrate laterally adjacent to the first region as at least one of an amorphous or polycrystalline region; and forming an interconnect over at least one of the first and second regions of the semiconductor substrate.

公开(公告)号：US20170301721A1

公开(公告)日：2017-10-19

申请号：US15586498

申请日：2017-05-04

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14687 ,  H01L27/14806

Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

公开(公告)号：US12154921B2

公开(公告)日：2024-11-26

申请号：US17398147

申请日：2021-08-10

Applicant: Infineon Technologies AG

Inventor： Ines Uhlig ,  Kerstin Kaemmer ,  Dirk Offenberg ,  Norbert Thyssen

IPC: H01L27/146 ,  G02B5/04 ,  G03B30/00

Abstract: A device for an image sensor is provided. The device includes a semiconductor device having a photo-sensitive region and a metallization stack for electrically contacting the photo-sensitive region. The photo-sensitive region is configured to generate an electric signal based on incident light. Further, the device includes an optical stack formed on a surface of the semiconductor device and configured to guide the incident light towards the photo-sensitive region. The optical stack includes a plurality of regions stacked on top of each other. The plurality of regions includes a filter region configured to selectively transmit the incident light only in a target wavelength range.