公开(公告)号：US20200006418A1

公开(公告)日：2020-01-02

申请号：US16566171

申请日：2019-09-10

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

公开(公告)号：US20170301721A1

公开(公告)日：2017-10-19

申请号：US15586498

申请日：2017-05-04

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14687 ,  H01L27/14806

Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

公开(公告)号：US10854669B2

公开(公告)日：2020-12-01

申请号：US16909745

申请日：2020-06-23

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

公开(公告)号：US10468248B2

公开(公告)日：2019-11-05

申请号：US15485232

申请日：2017-04-12

Applicant: Infineon Technologies AG

Inventor： Heiko Aßmann ,  Felix Braun ,  Marcus Dankelmann ,  Stefan Doering ,  Karsten Friedrich ,  Udo Goetschkes ,  Andreas Greiner ,  Ralf Rudolf ,  Jens Schneider

IPC: H01L21/02 ,  H01L21/265 ,  H01L21/027 ,  H01L21/266 ,  H01L21/268 ,  H01L21/324 ,  H01L29/06

Abstract: In various embodiments, a method is provided. The method may include forming a buried electrically charged region at a predefined position in a first layer in such a way that the buried electrically charged region generates an electric field having a lateral inhomogeneous field distribution above the first layer, and forming a second layer above the first layer using the field distribution in such a way that a structure of the second layer correlates with the position of the buried electrically charged region.

公开(公告)号：US09659992B2

公开(公告)日：2017-05-23

申请号：US14186390

申请日：2014-02-21

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14687 ,  H01L27/14806

Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

公开(公告)号：US10692921B2

公开(公告)日：2020-06-23

申请号：US16566171

申请日：2019-09-10

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

公开(公告)号：US10411060B2

公开(公告)日：2019-09-10

申请号：US15586498

申请日：2017-05-04

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

公开(公告)号：US20200321388A1

公开(公告)日：2020-10-08

申请号：US16909745

申请日：2020-06-23

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

公开(公告)号：US20170294299A1

公开(公告)日：2017-10-12

申请号：US15485232

申请日：2017-04-12

Applicant: Infineon Technologies AG

Inventor： Heiko Assmann ,  Felix Braun ,  Marcus Dankelmann ,  Stefan Doering ,  Karsten Friedrich ,  Udo Goetschkes ,  Andreas Greiner ,  Ralf Rudolf ,  Jens Schneider

IPC: H01L21/027 ,  H01L21/265 ,  H01L21/266 ,  H01L21/324 ,  H01L21/02 ,  H01L29/06 ,  H01L21/268

CPC classification number: H01L21/027 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02634 ,  H01L21/0271 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/268 ,  H01L21/324 ,  H01L29/0607

Abstract: In various embodiments, a method is provided. The method may include forming a buried electrically charged region at a predefined position in a first layer in such a way that the buried electrically charged region generates an electric field having a lateral inhomogeneous field distribution above the first layer, and forming a second layer above the first layer using the field distribution in such a way that a structure of the second layer correlates with the position of the buried electrically charged region.

公开(公告)号：US20150235864A1

公开(公告)日：2015-08-20

申请号：US14181751

申请日：2014-02-17

Applicant: Infineon Technologies AG

Inventor： Mirko Vogt ,  Felix Braun ,  Jens Schneider ,  Bee Kim Hong ,  Matthias Schmeide

IPC: H01L21/311 ,  H01L21/266 ,  H01L21/3213

CPC classification number: H01L21/31144 ,  H01L21/266 ,  H01L21/31155 ,  H01L21/32139

Abstract: A method for processing a layer may include: providing a patterned carbon layer over a layer or over a carrier; and carrying out an ion implantation through the patterned carbon layer into the layer or into the carrier.

Abstract translation: 用于处理层的方法可以包括：在层上或载体上提供图案化碳层; 并且通过图案化的碳层进行离子注入到该层或载体中。