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    INFRARED RADIATION SOURCE
    4.
    发明申请
    INFRARED RADIATION SOURCE 有权

    公开(公告)号：US20230127662A1

    公开(公告)日：2023-04-27

    申请号：US18047912

    申请日：2022-10-19

    Applicant: Infineon Technologies AG

    Inventor： Stefan Hampl ,  Kerstin Kämmer ,  Olaf Storbeck ,  Ines Uhlig

    IPC: H05B3/44

    Abstract: An IR (infrared) radiation source includes a sealed cavity structure enclosing a vacuum chamber having a low atmospheric pressure, wherein the sealed cavity structure includes a thermally and electrically insulating material for enclosing the vacuum chamber, heating filaments extending in the vacuum chamber between opposing electrode regions at opposing wall regions of the vacuum chamber, wherein the heating filaments are electrically connected in parallel, and wherein the heating filaments and the electrode regions have a highly electrically conductive material, and an optical isolation structure adjacent to the vacuum chamber for optically confining the IR radiation and providing a predominant propagation direction of the IR radiation.

    Method for producing a buried cavity structure
    5.
    发明授权
    Method for producing a buried cavity structure 有权

    公开(公告)号：US10784147B2

    公开(公告)日：2020-09-22

    申请号：US16029237

    申请日：2018-07-06

    Applicant: Infineon Technologies AG

    Inventor： Ines Uhlig ,  Kerstin Kaemmer ,  Norbert Thyssen

    IPC: H01L21/762 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/3065

    Abstract: In accordance with an embodiment, a method for producing a buried cavity structure includes providing a mono-crystalline semiconductor substrate, producing a doped volume region in the mono-crystalline semiconductor substrate, wherein the doped volume region has an increased etching rate for a first etchant by comparison with an adjoining, undoped or more lightly doped material of the monocrystalline semiconductor substrate, forming an access opening to the doped volume region, and removing the doped semiconductor material in the doped volume region using the first etchant through the access opening to obtain the buried cavity structure.

    Image sensor and device for an image sensor
    7.
    发明授权
    Image sensor and device for an image sensor 有权

    公开(公告)号：US12154921B2

    公开(公告)日：2024-11-26

    申请号：US17398147

    申请日：2021-08-10

    Applicant: Infineon Technologies AG

    Inventor： Ines Uhlig ,  Kerstin Kaemmer ,  Dirk Offenberg ,  Norbert Thyssen

    IPC: H01L27/146 ,  G02B5/04 ,  G03B30/00

    Abstract: A device for an image sensor is provided. The device includes a semiconductor device having a photo-sensitive region and a metallization stack for electrically contacting the photo-sensitive region. The photo-sensitive region is configured to generate an electric signal based on incident light. Further, the device includes an optical stack formed on a surface of the semiconductor device and configured to guide the incident light towards the photo-sensitive region. The optical stack includes a plurality of regions stacked on top of each other. The plurality of regions includes a filter region configured to selectively transmit the incident light only in a target wavelength range.

    Controlling of photo-generated charge carriers
    9.
    发明授权
    Controlling of photo-generated charge carriers 有权

    公开(公告)号：US10707362B2

    公开(公告)日：2020-07-07

    申请号：US15881100

    申请日：2018-01-26

    Applicant: Infineon Technologies AG

    Inventor： Thomas Bever ,  Henning Feick ,  Dirk Offenberg ,  Stefano Parascandola ,  Ines Uhlig ,  Thoralf Kautzsch ,  Dirk Meinhold ,  Hanno Melzner

    IPC: H01L31/0352 ,  G01S7/4914 ,  H01L27/148

    Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.

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