METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

    公开(公告)号:US20170309565A1

    公开(公告)日:2017-10-26

    申请号:US15137431

    申请日:2016-04-25

    CPC classification number: H01L23/5256

    Abstract: A method for use in manufacturing semiconductor devices includes providing a structured layer on a wafer, and selectively providing a substance on a selected portion of the structured layer. A die comprises a semiconductor device on a substrate, where the semiconductor device includes a substance, and where the substance has a sidewall that is sheer with respect to one or more of a base surface or a top surface of the substrate.

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