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公开(公告)号:US20180061742A1
公开(公告)日:2018-03-01
申请号:US15685880
申请日:2017-08-24
发明人: Sergey Ananiev , Robert Bauer , Heinrich Koerner , Yik Yee Tan , Juergen Walter
IPC分类号: H01L23/488 , H01L23/00
CPC分类号: H01L23/488 , H01L23/564 , H01L24/03 , H01L24/05 , H01L24/09 , H01L24/85 , H01L2224/0401 , H01L2224/04042 , H01L2224/05166 , H01L2224/05557 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/13101 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/484 , H01L2224/48507 , H01L2224/48824 , H01L2224/85365 , H01L2924/014 , H01L2924/00014
摘要: A semiconductor device includes an electrically conductive contact pad structure. Moreover, the semiconductor device includes a bond structure. The bond structure is in contact with the electrically conductive contact pad structure at least at an enclosed interface region. Additionally, the semiconductor device includes a degradation prevention structure laterally surrounding the enclosed interface region. The degradation prevention structure is vertically located between a portion of the bond structure and a portion of the electrically conductive contact pad structure.