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公开(公告)号：US20240006218A1
公开(公告)日：2024-01-04
申请号：US18211656
申请日：2023-06-20
IPC分类号： H01L21/683 , H01L21/66 , H01L21/304
CPC分类号： H01L21/6835 , H01L22/14 , H01L21/3043 , H01L2221/68318 , H01L2221/68381
摘要： A method of manufacturing a semiconductor device in a semiconductor body is proposed. The method includes processing a semiconductor body at a first surface of the semiconductor body. The method further includes attaching the semiconductor body to a carrier via the first surface. The carrier includes an inner part and an outer part at least partly surrounding the inner part. The method further includes processing the semiconductor body at a second surface opposite to the first surface. The method further includes detaching the inner part of the carrier from the semiconductor body.
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公开(公告)号：US20230127556A1
公开(公告)日：2023-04-27
申请号：US17743006
申请日：2022-05-12
发明人： Bernhard Goller , Alexander Binter , Tobias Hoechbauer , Martin Huber , Iris Moder , Matteo Piccin , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze
IPC分类号： H01L21/02 , H01L21/288 , H01L21/78
摘要： A method of processing a semiconductor wafer includes: forming one or more epitaxial layers over a first main surface of the semiconductor wafer; forming one or more porous layers in the semiconductor wafer or in the one or more epitaxial layers, wherein the semiconductor wafer, the one or more epitaxial layers and the one or more porous layers collectively form a substrate; forming doped regions of a semiconductor device in the one or more epitaxial layers; and after forming the doped regions of the semiconductor device, separating a non-porous part of the semiconductor wafer from a remainder of the substrate along the one or more porous layers.
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公开(公告)号：US20200013859A1
公开(公告)日：2020-01-09
申请号：US16502451
申请日：2019-07-03
发明人： Carsten SCHAEFFER , Alexander Breymesser , Bernhand Goller , Ronny Kern , Matteo Piccin , Roland Rupp , Francisco Javier Santos Rodriguez
IPC分类号： H01L29/16 , H01L21/04 , H01L21/784 , H01L21/683 , H01L29/66
摘要： According to an embodiment of a method described herein, a silicon carbide substrate is provided that includes a plurality of device regions. A front side metallization may be provided at a front side of the silicon carbide substrate. The method may further comprise providing an auxiliary structure at a backside of the silicon carbide substrate. The auxiliary structure includes a plurality of laterally separated metal portions. Each metal portion is in contact with one device region of the plurality of device regions.
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公开(公告)号：US11990520B2
公开(公告)日：2024-05-21
申请号：US17532030
申请日：2021-11-22
发明人： Andre Brockmeier , Guenter Denifl , Ronny Kern , Michael Knabl , Matteo Piccin , Francisco Javier Santos Rodriguez
CPC分类号： H01L29/1608 , H01L21/02378 , H01L21/565 , H01L21/78 , H01L23/3114 , H01L23/544
摘要： A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.
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公开(公告)号：US11576259B2
公开(公告)日：2023-02-07
申请号：US16550151
申请日：2019-08-23
发明人： Hans-Joachim Schulze , Andre Brockmeier , Tobias Franz Wolfgang Hoechbauer , Gerhard Metzger-Brueckl , Matteo Piccin , Francisco Javier Santos Rodriguez
IPC分类号： H01L23/12 , H05K1/03 , H01L21/683 , H01L29/16
摘要： A carrier configured to be attached to a semiconductor substrate via a first surface comprises a continuous carbon structure defining a first surface of the carrier, and a reinforcing material constituting at least 2 vol-% of the carrier.
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公开(公告)号：US11139375B2
公开(公告)日：2021-10-05
申请号：US16502451
申请日：2019-07-03
发明人： Carsten Schaeffer , Alexander Breymesser , Bernhard Goller , Ronny Kern , Matteo Piccin , Roland Rupp , Francisco Javier Santos Rodriguez
IPC分类号： H01L29/16 , H01L21/784 , H01L21/683 , H01L21/04 , H01L29/66 , H01L23/31 , H01L23/00 , H01L29/45
摘要： According to an embodiment of a method described herein, a silicon carbide substrate is provided that includes a plurality of device regions. A front side metallization may be provided at a front side of the silicon carbide substrate. The method may further comprise providing an auxiliary structure at a backside of the silicon carbide substrate. The auxiliary structure includes a plurality of laterally separated metal portions. Each metal portion is in contact with one device region of the plurality of device regions.
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公开(公告)号：US20230092013A1
公开(公告)日：2023-03-23
申请号：US17946454
申请日：2022-09-16
IPC分类号： H01L21/268 , H01L29/06
摘要： A method of manufacturing a semiconductor device is described. The method includes providing a parent substrate including a substrate portion of a first conductivity type. The method further includes forming an absorption layer in the parent substrate by an ion implantation process of an element through a first surface of the parent substrate. The method further includes forming a semiconductor layer structure on the first surface of the parent substrate. The method further includes splitting the parent substrate along a splitting section through a detachment layer. The detachment layer is arranged between the absorption layer and a second surface of the parent substrate at a vertical distance to the absorption layer.
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公开(公告)号：US11373863B2
公开(公告)日：2022-06-28
申请号：US16869033
申请日：2020-05-07
发明人： Roland Rupp , Mihai Draghici , Tobias Franz Wolfgang Hoechbauer , Wolfgang Lehnert , Matteo Piccin
摘要： A wafer composite includes a handle substrate, an auxiliary layer formed on a first main surface of the handle substrate, and a silicon carbide structure formed over the auxiliary layer. The handle substrate is subjected to laser radiation that modifies crystalline material along a focal plane in the handle substrate. The focal plane is parallel to the first main surface. The auxiliary layer is configured to stop propagation of microcracks that the laser radiation may generate in the handle substrate.
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公开(公告)号：US20220085174A1
公开(公告)日：2022-03-17
申请号：US17532030
申请日：2021-11-22
发明人： Andre Brockmeier , Guenter Denifl , Ronny Kern , Michael Knabl , Matteo Piccin , Francisco Javier Santos Rodriguez
摘要： A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.
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公开(公告)号：US11211459B2
公开(公告)日：2021-12-28
申请号：US16715439
申请日：2019-12-16
发明人： Andre Brockmeier , Guenter Denifl , Ronny Kern , Michael Knabl , Matteo Piccin , Francisco Javier Santos Rodriguez
摘要： An auxiliary carrier and a silicon carbide substrate are provided. The silicon carbide substrate includes an idle layer and a device layer between a main surface at a front side of the silicon carbide substrate and the idle layer. The device layer includes a plurality of laterally separated device regions. Each device region extends from the main surface to the idle layer. The auxiliary carrier is structurally connected with the silicon carbide substrate at the front side. The idle layer is removed. A mold structure is formed that fills a grid-shaped groove that laterally separates the device regions. The device regions are separated, and parts of the mold structure form frame structures laterally surrounding the device regions.
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