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    SEMICONDUCTOR DEVICE WITH POLYMER-BASED INSULATING MATERIAL AND METHOD OF PRODUCING THEREOF
    2.
    发明申请
    SEMICONDUCTOR DEVICE WITH POLYMER-BASED INSULATING MATERIAL AND METHOD OF PRODUCING THEREOF 有权

    公开(公告)号：US20220254713A1

    公开(公告)日：2022-08-11

    申请号：US17173863

    申请日：2021-02-11

    申请人： Infineon Technologies AG

    发明人： Markus Zundel ,  Sergey Ananiev ,  Andreas Behrendt ,  Holger Doepke ,  Uwe Schmalzbauer ,  Michael Sorger ,  Dominic Thurmer

    IPC分类号： H01L23/528 ,  H01L23/532 ,  H01L21/768

    摘要： A semiconductor device includes a semiconductor substrate having a first main surface and a metal structure above the first main surface. The metal structure has a periphery region that includes a transition section along which the metal structure transitions from a first thickness to a second thickness less than the first thickness. A polymer-based insulating material contacts and covers at least the periphery region of the metal structure. A thickness of the polymer-based insulating material begins to increase on a first main surface of the metal structure that faces away from the semiconductor substrate and continues to increase in a direction towards the transition section. An average slope of a surface of the polymer-based insulating material which faces away from the semiconductor substrate, as measured with respect to the first main surface of the metal structure, is less than 60 degrees along the periphery region of the metal structure.

    Method of Manufacturing a Battery, Battery and Integrated Circuit
    8.
    发明申请
    Method of Manufacturing a Battery, Battery and Integrated Circuit 审中-公开
    制造电池，电池和集成电路的方法

    公开(公告)号：US20170018813A1

    公开(公告)日：2017-01-19

    申请号：US15210454

    申请日：2016-07-14

    申请人： Infineon Technologies AG

    发明人： Rafael Janski ,  Kamil Karlovsky ,  Susanne Kraeuter ,  Michael Sorger

    IPC分类号： H01M10/42 ,  H01M4/04 ,  H01L27/06 ,  H01M10/04 ,  H01M4/66 ,  H01M10/0525 ,  H01M4/38

    摘要： A method of manufacturing a battery includes defining an active region and a bonding area in a first main surface of a first semiconductor substrate, forming a first ditch in the bonding area, forming an anode at the first semiconductor substrate in the active region, and forming a cathode at a carrier comprising an insulating material. The method further includes stacking the first semiconductor substrate and the carrier so that the first main surface of the first semiconductor substrate is disposed on a side adjacent to a first main surface of the carrier, a cavity being formed between the first semiconductor substrate and the carrier, and forming an electrolyte in the cavity.

    摘要翻译： 一种制造电池的方法包括在第一半导体衬底的第一主表面中限定有源区和结合区，在接合区中形成第一沟，在有源区中的第一半导体衬底处形成阳极，以及形成 在包括绝缘材料的载体上的阴极。 该方法还包括堆叠第一半导体衬底和载体，使得第一半导体衬底的第一主表面设置在与载体的第一主表面相邻的一侧，空腔形成在第一半导体衬底和载体之间 ，并在空腔中形成电解质。

    SYSTEMS AND METHODS FOR NON-VOLATILE MEMORY
    9.
    发明申请
    SYSTEMS AND METHODS FOR NON-VOLATILE MEMORY 有权
    非易失性存储器的系统和方法

    公开(公告)号：US20150138906A1

    公开(公告)日：2015-05-21

    申请号：US14085991

    申请日：2013-11-21

    申请人： Infineon Technologies AG

    发明人： Wolfgang Scherr ,  Michael Sorger ,  Guenther Wellenzohn ,  Magdalena Forster ,  Philemon Schweizer ,  Katharina Schmut ,  Bernhard Goller ,  Mario Motz

    IPC分类号： G11C5/14

    CPC分类号： G11C5/141

    摘要： A self powered memory system is disclosed. The system includes a volatile supply component, a battery component, a switch component, and a volatile memory component. The volatile supply component is configured to provide a time varying supply. The battery component is configured to generate a non-volatile supply. The switch component is configured to generate a persistent supply from the time varying supply and the non-volatile supply. The volatile memory component is configured to maintain data by using the persistent supply.

    摘要翻译： 公开了一种自供电的存储器系统。 该系统包括易失性电源组件，电池组件，开关组件和易失性存储器组件。 易失性供应部件配置成提供时变电源。 电池组件配置成产生非易失性电源。 开关组件被配置为从时变电源和非易失性电源产生持续电源。 易失性存储器组件被配置为通过使用持续电源来维护数据。