公开(公告)号：US11742384B2

公开(公告)日：2023-08-29

申请号：US17217251

申请日：2021-03-30

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Christian Jaeger ,  Moriz Jelinek ,  Daniel Schloegl ,  Benedikt Stoib

IPC: H01L29/08 ,  H01L29/739 ,  H01L29/06 ,  H01L29/66 ,  H01L21/265 ,  H01L21/322 ,  H01L29/10

CPC classification number: H01L29/0834 ,  H01L21/26513 ,  H01L21/3221 ,  H01L29/0638 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/7395

Abstract: A vertical power semiconductor device is proposed. The vertical power semiconductor device includes a semiconductor body having a first main surface and a second main surface opposite to the first main surface along a vertical direction. The vertical power semiconductor device further includes a drift region in the semiconductor body. The drift region includes platinum atoms. The vertical power semiconductor device further includes a field stop region in the semiconductor body between the drift region and the second main surface. The field stop region includes a plurality of impurity peaks. A first impurity peak of the plurality of impurity peaks has a larger concentration than a second impurity peak of the plurality of impurity peaks. The first impurity peak includes hydrogen and the second impurity peak includes helium.

公开(公告)号：US09853137B2

公开(公告)日：2017-12-26

申请号：US14935830

申请日：2015-11-09

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Johannes Georg Laven ,  Helmut Oefner ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/00 ,  H01L29/739 ,  H01L21/263 ,  H01L21/324 ,  H01L21/66 ,  H01L29/10 ,  H01L29/36

Abstract: A method for forming a semiconductor device comprises implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of the defined dose of protons and the defined temperature profile is selected depending on a carbon-related parameter indicating information on a carbon concentration within at least a part of the semiconductor substrate.

公开(公告)号：US20170243747A1

公开(公告)日：2017-08-24

申请号：US15435034

申请日：2017-02-16

Applicant: Infineon Technologies AG

Inventor： Michael Brugger ,  Moriz Jelinek ,  Johannes Georg Laven ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/265 ,  H01L21/66

CPC classification number: H01L21/26586 ,  H01L22/12 ,  H01L22/20

Abstract: A method for implanting ions into a semiconductor substrate includes performing a test implantation of ions into a semiconductor substrate. The ions of the test implantation are implanted with a first implantation angle range over the semiconductor substrate. Further, the method includes determining an implantation angle offset based on the semiconductor substrate after the test implantation and adjusting a tilt angle of the semiconductor substrate with respect to an implantation direction based on the determined implantation angle offset. Additionally, the method includes performing at least one target implantation of ions into the semiconductor substrate after the adjustment of the tilt angle. The ions of the at least one target implantation are implanted with a second implantation angle range over the semiconductor substrate. Further, the first implantation angle range is larger than the second implantation angle range.

公开(公告)号：US09728627B2

公开(公告)日：2017-08-08

申请号：US14935830

申请日：2015-11-09

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Johannes Georg Laven ,  Helmut Oefner ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/00 ,  H01L29/739 ,  H01L29/36 ,  H01L29/10 ,  H01L21/324 ,  H01L21/263 ,  H01L21/66

Abstract: A method for forming a semiconductor device comprises implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of the defined dose of protons and the defined temperature profile is selected depending on a carbon-related parameter indicating information on a carbon concentration within at least a part of the semiconductor substrate.

公开(公告)号：US20160329401A1

公开(公告)日：2016-11-10

申请号：US15146459

申请日：2016-05-04

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Moriz Jelinek ,  Hans-Joachim Schulze ,  Werner Schustereder ,  Michael Stadtmueller

IPC: H01L29/06 ,  H01L21/8234 ,  H01L29/739 ,  H01L21/324

CPC classification number: H01L29/0692 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/3221 ,  H01L21/324 ,  H01L21/8234 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20 ,  H01L29/167 ,  H01L29/36 ,  H01L29/7393 ,  H01L29/8611

Abstract: A method of manufacturing a semiconductor device includes determining information that indicates an extrinsic dopant concentration and an intrinsic oxygen concentration in a semiconductor wafer. On the basis of information about the extrinsic dopant concentration and the intrinsic oxygen concentration as well as information about a generation rate or a dissociation rate of oxygen-related thermal donors in the semiconductor wafer, a process temperature gradient is determined for generating or dissociating oxygen-related thermal donors to compensate for a difference between a target dopant concentration and the extrinsic dopant concentration.

Abstract translation: 制造半导体器件的方法包括确定指示半导体晶片中的外在掺杂剂浓度和固有氧浓度的信息。 基于关于外在掺杂剂浓度和本征氧浓度的信息以及关于半导体晶片中氧相关热供体的产生速率或解离速率的信息，确定用于产生或解离氧 - 以补偿目标掺杂剂浓度与外在掺杂剂浓度之间的差异。

公开(公告)号：US20230125859A1

公开(公告)日：2023-04-27

申请号：US17974592

申请日：2022-10-27

Applicant: Infineon Technologies AG

Inventor： Daniel Schlögl ,  Hans-Joachim Schulze ,  Moriz Jelinek ,  Francisco Javier Santos Rodriguez

IPC: H01L21/265 ,  H01L29/06 ,  H01L21/324

Abstract: A method of manufacturing a semiconductor device in a semiconductor body having a first surface and a second surface is proposed. The method includes implanting protons through the second surface into the semiconductor body. The method further includes implanting ions through the second surface into the semiconductor body. The ions are ions of a non-doping element having an atomic number of at least 9. Thereafter, the method further includes processing the semiconductor body by thermal annealing.

公开(公告)号：US20220085215A1

公开(公告)日：2022-03-17

申请号：US17466342

申请日：2021-09-03

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Christian Jaeger ,  Moriz Jelinek ,  Daniel Schloegl ,  Benedikt Stoib

IPC: H01L29/861 ,  H01L29/06 ,  H01L29/36 ,  H01L21/265 ,  H01L29/08 ,  H01L29/66

Abstract: A power semiconductor diode includes a semiconductor body having first and second main surfaces opposite to each other along a vertical direction. A drift region of a second conductivity type is arranged between an anode region of a first conductivity type and the second main surface. A field stop region of the second conductivity type is arranged between the drift region and the second main surface. A dopant concentration profile of the field stop region along the vertical direction includes a maximum peak. An injection region of the first conductivity type is arranged between the field stop region and the second main surface, with a pn-junction between the injection and field stop regions. A cathode contact region of the second conductivity type is arranged between the field stop region and the second main surface. A first vertical distance between the pn-junction and the maximum peak ranges from 200 nm to 1500 nm.

公开(公告)号：US11127839B2

公开(公告)日：2021-09-21

申请号：US16723147

申请日：2019-12-20

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Kang Nan Khor ,  Armin Schieber ,  Michael Stadtmueller ,  Wei-Lin Sun

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3115 ,  H01L29/423

Abstract: A method of manufacturing a trench oxide in a trench for a gate structure in a semiconductor substrate is described. The method includes: generating the trench in the semiconductor substrate; generating an oxide layer over opposing sidewalls of the trench; damaging at least a portion of the oxide layer by ion implantation; coating the oxide layer with an etching mask; generating at least one opening in the etching mask adjacent to one of the opposing sidewalls; and partly removing the oxide layer by etching the oxide layer beneath the etching mask down to an etching depth at the one of the opposing sidewalls by introducing an etching agent into the opening.

公开(公告)号：US11043384B2

公开(公告)日：2021-06-22

申请号：US16432211

申请日：2019-06-05

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Michael Kokot ,  Christian Krueger ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/04 ,  H01L21/265 ,  H01L21/66 ,  H01L29/06 ,  H01L29/10 ,  H01L29/36 ,  H01L21/687

Abstract: A method of manufacturing a semiconductor device includes reducing a thickness of a semiconductor substrate and/or forming a doped region in the semiconductor substrate. The method further includes changing an ion acceleration energy of an ion beam while effecting a relative movement between the semiconductor substrate and the ion beam impinging on the semiconductor substrate.

公开(公告)号：US20190385852A1

公开(公告)日：2019-12-19

申请号：US16432211

申请日：2019-06-05

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Michael Kokot ,  Christian Krueger ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/265 ,  H01L21/66 ,  H01L21/687 ,  H01L29/10 ,  H01L29/36 ,  H01L29/06

Abstract: A method of manufacturing a semiconductor device includes reducing a thickness of a semiconductor substrate and/or forming a doped region in the semiconductor substrate. The method further includes changing an ion acceleration energy of an ion beam while effecting a relative movement between the semiconductor substrate and the ion beam impinging on the semiconductor substrate.