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1.
公开(公告)号:US20170018813A1
公开(公告)日:2017-01-19
申请号:US15210454
申请日:2016-07-14
摘要: A method of manufacturing a battery includes defining an active region and a bonding area in a first main surface of a first semiconductor substrate, forming a first ditch in the bonding area, forming an anode at the first semiconductor substrate in the active region, and forming a cathode at a carrier comprising an insulating material. The method further includes stacking the first semiconductor substrate and the carrier so that the first main surface of the first semiconductor substrate is disposed on a side adjacent to a first main surface of the carrier, a cavity being formed between the first semiconductor substrate and the carrier, and forming an electrolyte in the cavity.
摘要翻译: 一种制造电池的方法包括在第一半导体衬底的第一主表面中限定有源区和结合区,在接合区中形成第一沟,在有源区中的第一半导体衬底处形成阳极,以及形成 在包括绝缘材料的载体上的阴极。 该方法还包括堆叠第一半导体衬底和载体,使得第一半导体衬底的第一主表面设置在与载体的第一主表面相邻的一侧,空腔形成在第一半导体衬底和载体之间 ,并在空腔中形成电解质。
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公开(公告)号:US10476112B2
公开(公告)日:2019-11-12
申请号:US15210454
申请日:2016-07-14
IPC分类号: H01M10/42 , H01M4/38 , H01L27/06 , H01M4/66 , H01M10/052 , H01M10/058 , H01M6/40
摘要: A method of manufacturing a battery includes defining an active region and a bonding area in a first main surface of a first semiconductor substrate, forming a first ditch in the bonding area, forming an anode at the first semiconductor substrate in the active region, and forming a cathode at a carrier comprising an insulating material. The method further includes stacking the first semiconductor substrate and the carrier so that the first main surface of the first semiconductor substrate is disposed on a side adjacent to a first main surface of the carrier, a cavity being formed between the first semiconductor substrate and the carrier, and forming an electrolyte in the cavity.
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