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公开(公告)号：US10549985B2
公开(公告)日：2020-02-04
申请号：US15692938
申请日：2017-08-31
发明人： Dominic Maier , Matthias Steiert , Chau Fatt Chiang , Christian Geissler , Bernd Goller , Thomas Kilger , Johannes Lodermeyer , Franz-Xaver Muehlbauer , Chee Yang Ng , Beng Keh See , Claus Waechter
摘要： A semiconductor package includes a semiconductor die having a sensor structure disposed at a first side of the semiconductor die, and a first port extending through the semiconductor die from the first side to a second side of the semiconductor die opposite the first side, so as to provide a link to the outside environment. Corresponding methods of manufacture are also provided.
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公开(公告)号：US09981843B2
公开(公告)日：2018-05-29
申请号：US15138313
申请日：2016-04-26
发明人： Dominic Maier , Alfons Dehe , Thomas Kilger , Markus Menath , Franz Xaver Muehlbauer , Daniel Porwol , Juergen Wagner
CPC分类号： B81C1/00896 , B81C1/00269 , B81C1/00801 , B81C2201/0194 , B81C2201/053
摘要： A method of producing a chip package is described. A plurality of chips is provided on a first wafer. Each chip has a cavity which opens to a first main face of the chip. The cavities are filled or covered temporarily. The chips are then singulated. The singulated chips are embedded in an encapsulation material, and then the cavities are re-exposed.
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3.发明申请公开(公告)号：US20160090294A1
公开(公告)日：2016-03-31
申请号：US14495920
申请日：2014-09-25
发明人： Ulrich Wachter , Thomas Kilger
CPC分类号： B81C1/00238 , H01L21/568 , H01L24/19 , H01L24/96 , H01L24/97 , H01L2224/04105 , H01L2224/12105 , H01L2224/16225 , H01L2224/16227 , H01L2224/18 , H01L2224/73267 , H01L2224/97 , H01L2924/15313 , H01L2924/181 , H01L2924/18162 , H01L2924/3025 , H01L2924/00012 , H01L2224/81
摘要： According to various embodiments, a package arrangement may include: a first encapsulation material; at least one electronic circuit at least partially embedded in the first encapsulation material, the at least one electronic circuit including a first contact pad structure at a first side of the at least one electronic circuit; at least one electromechanical device disposed over the first side of the at least one electronic circuit, the at least one electromechanical device including a second contact pad structure facing the first side of the at least one electronic circuit; a redistribution layer structure between the at least one electromechanical device and the at least one electronic circuit, the redistribution layer structure electrically connecting the first contact pad structure with the second contact pad structure, wherein a gap is provided between the at least one electromechanical device and the redistribution layer structure; a second encapsulation material at least partially covering the at least one electromechanical device, wherein the gap is free of the second encapsulation material.
摘要翻译： 根据各种实施例，封装结构可以包括：第一封装材料; 至少一个电子电路至少部分地嵌入在所述第一封装材料中，所述至少一个电子电路包括在所述至少一个电子电路的第一侧的第一接触焊盘结构; 设置在所述至少一个电子电路的第一侧上的至少一个机电装置，所述至少一个机电装置包括面向所述至少一个电子电路的第一侧的第二接触垫结构; 所述再分配层结构在所述至少一个机电装置和所述至少一个电子电路之间，所述再分配层结构将所述第一接触焊盘结构与所述第二接触焊盘结构电连接，其中，在所述至少一个机电装置和 再分配层结构; 至少部分地覆盖所述至少一个机电装置的第二封装材料，其中所述间隙不含所述第二封装材料。
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公开(公告)号：US08890284B2
公开(公告)日：2014-11-18
申请号：US13774541
申请日：2013-02-22
发明人： Thomas Kilger , Ulrich Wachter , Dominic Maier , Gottfried Beer
IPC分类号： H01L29/00 , H01L49/02 , H01L23/538 , H01L21/82 , H01L27/04
CPC分类号： H01L21/561 , H01L21/568 , H01L21/78 , H01L21/82 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/5384 , H01L23/5389 , H01L24/19 , H01L24/24 , H01L24/25 , H01L24/82 , H01L25/50 , H01L27/04 , H01L28/00 , H01L2224/04105 , H01L2224/12105 , H01L2224/16145 , H01L2224/16225 , H01L2224/24137 , H01L2224/2518 , H01L2224/73267 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/1461 , H01L2924/15311 , H01L2924/19105 , H01L2924/00
摘要： A number of semiconductor chips each include a first main face and a second main face opposite to the first main face. A first encapsulation layer is applied over the second main faces of the semiconductor chips. An electrical wiring layer is applied over the first main faces of the first semiconductor chips. A second encapsulation layer is applied over the electrical wiring layer. The thickness of the first encapsulation layer and the thicknesses of the first semiconductor chips is reduced. The structure can be singulated to obtain a plurality of semiconductor devices.
摘要翻译： 多个半导体芯片各自包括与第一主面相对的第一主面和第二主面。 在半导体芯片的第二主面上施加第一封装层。 在第一半导体芯片的第一主面上施加电布线层。 将第二封装层施加在电布线层上。 第一封装层的厚度和第一半导体芯片的厚度减小。 可以将该结构单个化以获得多个半导体器件。
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公开(公告)号：US11195787B2
公开(公告)日：2021-12-07
申请号：US15045687
申请日：2016-02-17
发明人： Ngoc-Hoa Huynh , Franz-Xaver Muehlbauer , Claus Waechter , Veronika Huber , Dominic Maier , Thomas Kilger , Saverio Trotta , Ashutosh Baheti , Georg Meyer-Berg , Maciej Wojnowski
IPC分类号： H01L23/31 , H01L23/498 , H01L23/367 , H01L23/538 , H01Q9/28 , H01Q1/22 , H01Q9/04 , H01Q21/06 , H01L21/56 , H01Q9/26
摘要： A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. The semiconductor device includes a dielectric layer and an antenna on the dielectric layer. The dielectric layer is between the antenna and the semiconductor chip.
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公开(公告)号：US10224317B2
公开(公告)日：2019-03-05
申请号：US15618684
申请日：2017-06-09
发明人： Thomas Kilger
IPC分类号： H01L21/00 , H01L25/00 , H01L23/498 , H01L23/538 , H01L25/10 , H01L23/64 , H01L23/00 , H01F27/29 , H01L21/3205 , H01L21/78 , H01L25/065 , H01F27/28 , H05K1/16 , H05K1/18 , H01L21/56
摘要： A system and method of manufacturing a system are disclosed. An embodiment of the system includes a first packaged component comprising a first component and a first redistribution layer (RDL) disposed on a first main surface of the first packaged component, wherein the first RDL includes first pads. The system further includes a second packaged component having a second component disposed at a first main surface of the second packaged component, the first main surface having second pads and a connection layer between the first packaged component and the second packaged component, wherein the connection layer connects a first plurality of the first pads with the second pads.
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公开(公告)号：US20170236776A1
公开(公告)日：2017-08-17
申请号：US15045687
申请日：2016-02-17
发明人： Ngoc-Hoa Huynh , Franz-Xaver Muehlbauer , Claus Waechter , Veronika Huber , Dominic Maier , Thomas Kilger , Saverio Trotta , Ashutosh Baheti , Georg Meyer-Berg , Maciej Wojnowski
IPC分类号： H01L23/498 , H01L23/367 , H01L21/56 , H01L23/31
CPC分类号： H01L23/49822 , H01L21/56 , H01L23/3114 , H01L23/3672 , H01L23/3677 , H01L23/49816 , H01L23/5389 , H01L2223/6677 , H01L2223/6683 , H01L2224/04105 , H01L2224/12105 , H01L2224/73267 , H01L2924/18162 , H01Q1/2283 , H01Q9/0407 , H01Q9/265 , H01Q9/285 , H01Q21/061 , H01Q21/065
摘要： A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. The semiconductor device includes a dielectric layer and an antenna on the dielectric layer. The dielectric layer is between the antenna and the semiconductor chip.
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公开(公告)号：US20160297672A1
公开(公告)日：2016-10-13
申请号：US14684815
申请日：2015-04-13
摘要： A semiconductor device having a lid, and method of making a semiconductor device having a lid is disclosed. The semiconductor device includes a substrate. A device is positioned at the substrate. A lid made of a semiconductor material is positioned over the device to form a protective cavity about the device. The lid is formed using a semiconductor process. In other examples, the lid may be made of a nonconductive material, such as a polymer material. The lids may be formed as part of a batch process.
摘要翻译： 本发明公开了一种具有盖的半导体器件和制造具有盖的半导体器件的方法。 半导体器件包括衬底。 设备位于基板上。 由半导体材料制成的盖子位于该装置上方以形成围绕该装置的保护腔。 使用半导体工艺形成盖。 在其他示例中，盖可以由非导电材料制成，例如聚合物材料。 盖可以形成为批处理的一部分。
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公开(公告)号：US09275878B2
公开(公告)日：2016-03-01
申请号：US14043138
申请日：2013-10-01
发明人： Ulrich Wachter , Dominic Maier , Thomas Kilger
IPC分类号： H01L23/48 , H01L21/56 , H01L21/768 , H01L23/31 , H01L23/00
CPC分类号： H01L24/96 , H01L21/561 , H01L21/568 , H01L21/76838 , H01L23/31 , H01L23/3114 , H01L23/48 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/19 , H01L24/48 , H01L24/85 , H01L2224/02317 , H01L2224/02331 , H01L2224/02379 , H01L2224/03462 , H01L2224/0347 , H01L2224/03828 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/05008 , H01L2224/05147 , H01L2224/05548 , H01L2224/05553 , H01L2224/05655 , H01L2224/1132 , H01L2224/1134 , H01L2224/11849 , H01L2224/12105 , H01L2224/13024 , H01L2224/131 , H01L2224/96 , H01L2924/00014 , H01L2924/10161 , H01L2924/181 , H01L2924/19107 , H01L2924/00 , H01L2224/03 , H01L2224/11 , H01L2924/014 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Integrated circuits are packaged by placing a plurality of semiconductor dies on a support substrate, each one of the semiconductor dies having a plurality of terminals at a side facing the support substrate and covering the semiconductor dies with a molding compound to form a molded structure. The support substrate is then removed from the molded structure to expose the side of the semiconductor dies with the terminals, and a metal redistribution layer is formed on the molded structure and in direct contact with the terminals of the semiconductor dies and the molding compound. The redistribution layer is formed without first forming a dielectric layer on a side of the molded structure with the terminals of the semiconductor dies. A corresponding molded substrate and individual molded semiconductor packages are also disclosed.
摘要翻译： 集成电路通过将多个半导体管芯放置在支撑衬底上而被封装，每个半导体管芯在面向支撑衬底的一侧具有多个端子，并用模制化合物覆盖半导体管芯以形成模制结构。 然后将支撑基板从模制结构中取出，以使端子露出半导体管芯的一侧，并且在模制结构上形成金属再分布层，并与半导体管芯和模塑料的端子直接接触。 形成再分配层，而不用半导体管芯的端子在模制结构的一侧形成电介质层。 还公开了相应的模制基板和单独的模制半导体封装。
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公开(公告)号：US11823970B2
公开(公告)日：2023-11-21
申请号：US17308472
申请日：2021-05-05
发明人： Bernhard Rieder , Thomas Kilger
CPC分类号： H01L23/3135 , H01L21/56 , H01Q1/2283 , H01Q19/06 , H01L24/02 , H01L24/13 , H01L24/16 , H01L2224/02379 , H01L2224/13024 , H01L2224/16225 , H01L2924/10158
摘要： A radar chip package includes a radar monolithic microwave integrated circuit (MMIC) having a backside, a frontside arranged opposite to the backside, and lateral sides that extend between the backside and the frontside, wherein the radar MIMIC comprises a recess that extends from the backside at least partially towards the frontside; a plurality of electrical interfaces coupled to the frontside of the radar MIMIC; at least one antenna arranged at the frontside of the radar MIMIC; and a lens formed over the recess and the at least one antenna, wherein the lens is coupled to the backside of the radar MMIC.
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