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公开(公告)号:US07253355B2
公开(公告)日:2007-08-07
申请号:US10322762
申请日:2002-12-19
IPC分类号: H01L31/0216 , B05D3/02
CPC分类号: H01L31/0392 , C04B35/5805 , C23C18/1208 , C23C18/1283 , Y02E10/50
摘要: The invention relates to a method for constructing a layer structure on an especially fragile flat substrate. In order for thin, fragile flat substrates to be able to be subjected to refinement or construction of semiconductor components, a process is proposed with the steps: Applying an inorganic ceramic phase to the fragile substrate and subsequent heat treatment for hardening and sintering the inorganic ceramic material.
摘要翻译: 本发明涉及一种在特别脆弱的平板基板上构造层结构的方法。 为了使薄的脆弱的平板基板能够进行半导体部件的精细化或构造,提出了以下步骤:将无机陶瓷相应用于脆弱的基板和随后的热处理以硬化和烧结无机陶瓷 材料。
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2.
公开(公告)号:US4915978A
公开(公告)日:1990-04-10
申请号:US281874
申请日:1988-12-08
申请人: Hilmar von Campe , Dietmar Liedtke , Berthold Schum , WoJorg
发明人: Hilmar von Campe , Dietmar Liedtke , Berthold Schum , WoJorg
IPC分类号: C23C16/50 , C23C16/509 , H05H1/46
CPC分类号: C23C16/509 , H05H1/46
摘要: A method and a device are proposed for formation of a layer on a surface of a substrate by plasma-chemical process, where the surface is aligned parallel to the electrical field required for the plasma-chemical process. In addition, the gas required therefor flows directly onto the surface.
摘要翻译: 提出了一种方法和装置,用于通过等离子体化学过程在基板的表面上形成层,其中表面平行于等离子体化学过程所需的电场。 此外,所需的气体直接流到表面上。
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3.
公开(公告)号:US5053355A
公开(公告)日:1991-10-01
申请号:US462212
申请日:1990-01-09
申请人: Hilmar von Campe
发明人: Hilmar von Campe
IPC分类号: H01L21/677 , H01L31/18
CPC分类号: H01L21/67784 , H01L31/18 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10S148/107
摘要: A method and means for producing a layered semiconductor system are proposed wherein the required semiconductor layers are deposited on a carrier layer (10) through interaction with a melt (42). The carrier layer (10) itself may have a basic layer consisting of glass or quartz, which in turn may be formed from a melt by solidification on a metal melt.
摘要翻译: 提出了一种用于制造层状半导体系统的方法和装置,其中所需的半导体层通过与熔体(42)的相互作用沉积在载体层(10)上。 载体层(10)本身可以具有由玻璃或石英组成的碱性层,其又可以通过在金属熔体上凝固而由熔体形成。
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