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    HIGH DENSITY ORGANIC INTERCONNECT STRUCTURES
    3.
    发明公开
    HIGH DENSITY ORGANIC INTERCONNECT STRUCTURES 审中-公开

    公开(公告)号：US20230223278A1

    公开(公告)日：2023-07-13

    申请号：US18118835

    申请日：2023-03-08

    Applicant: Intel Corporation

    Inventor： Sri Chaitra Jyotsna Chavali ,  Siddharth K. Alur ,  Lilia May ,  Amanda E. Shuckman

    IPC: H01L21/48 ,  H01L23/498

    CPC classification number: H01L21/4857 ,  H01L23/49822 ,  H01L23/49827

    Abstract: Generally discussed herein are systems, devices, and methods that include an organic high density interconnect structure and techniques for making the same. According to an example a method can include forming one or more low density buildup layers on a core, conductive interconnect material of the one or more low density buildup layers electrically and mechanically connected to conductive interconnect material of the core, forming one or more high density buildup layers on an exposed low density buildup layer of the one or more low density buildup layers, conductive interconnect material of the high density buildup layers electrically and mechanically connected to the conductive interconnect material of the one or more low density buildup layers, and forming another low density buildup layer on and around an exposed high density buildup layer of the one or more high density buildup layers.

    Magnetic inductor device and method
    6.
    发明授权
    Magnetic inductor device and method 有权

    公开(公告)号：US12224253B2

    公开(公告)日：2025-02-11

    申请号：US17480064

    申请日：2021-09-20

    Applicant: Intel Corporation

    Inventor： Xin Ning ,  Brandon C. Marin ,  Kyu Oh Lee ,  Siddharth K. Alur ,  Numair Ahmed ,  Brent Williams ,  Mollie Stewart ,  Nathan Ou ,  Cary Kuliasha

    IPC: H01L23/64 ,  H01F27/28 ,  H01L21/48 ,  H01L23/498 ,  H01L49/02

    Abstract: Transmission pathways in substrates, and associated methods are shown. Example transmission pathways include a semiconductor substrate with a core, a dielectric layer fixed on the core, at least one first electrical transmission pathway extending through at least one of the dielectric layer and the core. The first pathway includes a magnetic material disposed within the at least the core of the at least one first electrical transmission pathway, at least one second electrical transmission pathway extending through the magnetic material, a nickel layer disposed on inner circumferential surface of the magnetic material at least within the second electrical transmission pathway, a copper layer disposed on at least the nickel layer within the second electrical transmission pathway. The dielectric spacer or the nickel layer separates the copper layer from the magnetic material. At least one third pathway extends through at least one of the dielectric layer and the core separate from the at least one electrical transmission pathway.

    High density organic interconnect structures
    8.
    发明授权
    High density organic interconnect structures 有权

    公开(公告)号：US11631595B2

    公开(公告)日：2023-04-18

    申请号：US17521406

    申请日：2021-11-08

    Applicant: Intel Corporation

    Inventor： Sri Chaitra Jyotsna Chavali ,  Siddharth K. Alur ,  Lilia May ,  Amanda E. Schuckman

    IPC: H01L21/48 ,  H01L23/498

    Abstract: Generally discussed herein are systems, devices, and methods that include an organic high density interconnect structure and techniques for making the same. According to an example a method can include forming one or more low density buildup layers on a core, conductive interconnect material of the one or more low density buildup layers electrically and mechanically connected to conductive interconnect material of the core, forming one or more high density buildup layers on an exposed low density buildup layer of the one or more low density buildup layers, conductive interconnect material of the high density buildup layers electrically and mechanically connected to the conductive interconnect material of the one or more low density buildup layers, and forming another low density buildup layer on and around an exposed high density buildup layer of the one or more high density buildup layers.

    Microelectronic device including non-homogeneous build-up dielectric
    9.
    发明授权
    Microelectronic device including non-homogeneous build-up dielectric 有权

    公开(公告)号：US10727184B2

    公开(公告)日：2020-07-28

    申请号：US16145683

    申请日：2018-09-28

    Applicant: Intel Corporation

    Inventor： Siddharth K. Alur ,  Srinivas V. Pietambaram

    IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522 ,  H01L23/498 ,  H01L25/065 ,  H01L21/02 ,  H01L23/00

    Abstract: Described are example microelectronic devices including structures, such as build-up layers, formed of a non-homogeneous photoimageable dielectric material. The non-homogeneous photoimageable dielectric material includes two regions forming opposite surfaces of the material. A first region includes a first carbon content, and a second region located above the first region includes a second carbon content which is greater than that of the first region. The second region of the photoimageable dielectric material provides enhanced adhesion with metal that may be deposited above the material, such as a sputtered metal seed layer to facilitate subsequent deposition of an electroless metal over the non-homogeneous photoimageable dielectric material.

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