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    RECESSED INTERCONNET LINE HAVING A LOW-OXYGEN CAP FOR FACILITATING A ROBUST PLANARIZATION PROCESS AND PROTECTING THE INTERCONNECT LINE FROM DOWNSTREAM ETCH OPERATIONS
    1.
    发明申请
    RECESSED INTERCONNET LINE HAVING A LOW-OXYGEN CAP FOR FACILITATING A ROBUST PLANARIZATION PROCESS AND PROTECTING THE INTERCONNECT LINE FROM DOWNSTREAM ETCH OPERATIONS 审中-公开

    公开(公告)号：US20200343131A1

    公开(公告)日：2020-10-29

    申请号：US16392996

    申请日：2019-04-24

    申请人： International Business Machines Corporation

    发明人： Samuel Sung, Shik Choi ,  Hari Prasad Amanapu

    IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/3105

    摘要： Embodiments of the invention are directed to a method that includes forming a dielectric region having a dielectric region top surface, wherein the dielectric top surface is substantially planar. A first interconnect structure having a substantially planar interconnect structure top surface with unintended non-planar regions is formed in the dielectric region. A reinforced planarization process is applied that includes recessing the first interconnect structure top surface to a level that is below the dielectric region top surface and the unintended non-planar region, thereby removing the unintended non-planar region and forming a second interconnect structure having a second interconnect structure top surface that is substantially planar; forming a protective cap on the second interconnect structure top surface, wherein the protective cap has a sustantially planer protective cap top surface; and recessing the dielectric region top surface to a level that is substantially planar with the protective cap top surface.