摘要:
A single cell for a fuel cell in which an air electrode or a fuel electrode includes at least two layers. The air electrode includes an adhering cathode layer formed on one surface of the solid electrolyte layer and configured to show a function to allow the air electrode and the solid electrolyte layer to adhere electrically and mechanically to each other, and an electricity collecting cathode layer formed on the adhering cathode layer and configured to show an electricity collecting function of the air electrode. Alternatively, the fuel electrode includes an adhering anode layer formed on the other surface of the solid electrolyte layer and configured to show a function to allow the fuel electrode and the solid electrolyte layer to adhere electrically and mechanically to each other, and an electricity collecting anode layer formed on the adhering anode layer and configured to show an electricity collecting function.
摘要:
A single cell for a fuel cell in which an air electrode or a fuel electrode includes at least two layers. The air electrode includes an adhering cathode layer formed on one surface of the solid electrolyte layer and configured to show a function to allow the air electrode and the solid electrolyte layer to adhere electrically and mechanically to each other, and an electricity collecting cathode layer formed on the adhering cathode layer and configured to show an electricity collecting function of the air electrode. Alternatively, the fuel electrode includes an adhering anode layer formed on the other surface of the solid electrolyte layer and configured to show a function to allow the fuel electrode and the solid electrolyte layer to adhere electrically and mechanically to each other, and an electricity collecting anode layer formed on the adhering anode layer and configured to show an electricity collecting function.
摘要:
A single cell for a fuel cell in which an air electrode or a fuel electrode includes at least two layers. The air electrode includes an adhering cathode layer formed on one surface of the solid electrolyte layer and configured to show a function to allow the air electrode and the solid electrolyte layer to adhere electrically and mechanically to each other, and an electricity collecting cathode layer formed on the adhering cathode layer and configured to show an electricity collecting function of the air electrode. Alternatively, the fuel electrode includes an adhering anode layer formed on the other surface of the solid electrolyte layer and configured to show a function to allow the fuel electrode and the solid electrolyte layer to adhere electrically and mechanically to each other, and an electricity collecting anode layer formed on the adhering anode layer and configured to show an electricity collecting function.
摘要:
When the emissivity ε on the reverse face of a substrate 10 is measured during annealing processing for the substrate 10, films made from a material that varies the emissivity ε, such as a first DPS film 15 used for forming a plug 15A, a second DPS film 17 used for forming a capacitor lower electrode 17A and a third DPS film 20 used for forming a capacitor upper electrode 20A, are formed on the top face of the substrate 10. On the other hand, no film made from a material that varies the emissivity ε, such as a DPS film, is formed on the reverse face of the substrate 10.
摘要:
On a semiconductor substrate made of p-type silicon, there are formed, in a successively layered fashion, a first p-type silicon semiconductor layer, laterally paired first n-type silicon semiconductor layers, laterally paired second p-type silicon semiconductor layers, and laterally paired n-type silicon semiconductor layers, by an epitaxial growth method. On the second n-type silicon semiconductor layer on the right side, there are successively formed a third p-type silicon semiconductor layer, a third n-type silicon semiconductor layer and a fourth p-type silicon semiconductor layer. The left first n-type silicon semiconductor layer, left second p-type silicon semiconductor layer and left second n-type silicon semiconductor layer form a first insular multilayered portion forming an n-channel MOSFET. The third p-type silicon semiconductor layer, third n-type silicon semiconductor layer and fourth p-type silicon semiconductor layer form a second insular portion forming a p-channel MOSFET. A first gate electrode is formed on a side surface of the left second p-type silicon semiconductor layer with a gate insulating film therebetween, and a second gate electrode is formed on a side surface of the right third n-type silicon semiconductor layer with a gate insulating film therebetween.
摘要:
After forming a polysilicon film to be used as a gate electrode on a semiconductor substrate of silicon, an insulating thin film is deposited on the polysilicon film. Impurity ions are implanted into the polysilicon film through the insulating thin film, so as to form an amorphous layer on the surface of the polysilicon film. After removing the insulating thin film existing on the polysilicon film, a metal film is deposited on the amorphous layer. A reaction is caused between the amorphous layer and the metal film through annealing, so as to form a metal silicide layer on the surface of the polysilicon film.
摘要:
Provided are optical shaped articles for CRT, such as projection lens and filter used for the CRT's of projection TV's, which comprise a transparent synthetic resin containing a red dyestuff or a combination of a green organic pigment and a yellow dyestuff and having specified spectral transmittance characteristics.
摘要:
A solid electrolyte material contains an A site-deficient complex oxide represented by a chemical formula A1-&agr;BO3-&dgr;, in which a B site contains at least Ga. This solid electrolyte material has stability, high oxide-ion conductivity at low temperature and high toughness. A method of manufacturing the solid electrolyte material, comprises: mixing oxide materials of respective constituent elements; baking temporarily the mixed materials at 1100 to 1200° C. for 2 to 10 hours; grinding the temporarily baked materials to powder; molding the powder; and sintering the molded powder. A solid oxide fuel cell, has: the solid electrolyte material; a cathode electrode formed on one surface of the solid electrolyte material; and an anode electrode formed on the other surface of the solid electrolyte material. The solid oxide fuel cell has a stable and long operation at low temperature.
摘要:
While conventionally, a Co film is deposited by directional sputtering directly on a source/drain diffusion layer formed on the surface of an Si substrate while the substrate is being heated, a thin oxide film is formed on the source/drain diffusion layer and then, the Co film is deposited by directional sputtering while the substrate is being heated. By doing this, an inner Co—Si layer the composition of which is thermally unstable is formed and a Co—Si—O layer is formed on the Co—Si layer. After the remaining unreacted Co film and the Co—Si—O layer are selectively removed, a high-temperature heat treatment is performed, so that the inner Co—Si layer is transformed into a CoSi2 layer to increase the film thickness. The formation of the oxide film curbs the speed of reaction between Co and Si, so that a Co—Si layer of the same thickness as that in the wide region can be formed in the fine region. As a result, a CoSi2 layer with uniform thickness and sheet resistance can be formed.
摘要:
A first metallization layer is locally formed on the surface of a semiconductor substrate thereby leaving portions of the semiconductor substrate's surface exposed. A first silicon oxide layer is then formed in such a manner that it covers the exposed portions of the semiconductor substrate's surface and the first metallization layer. This is followed by the formation of an HMDS molecular layer on the first silicon oxide layer. Then, a second silicon oxide is formed on the molecular layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS. Finally, a second metallization layer is locally formed on the second silicon oxide layer.