摘要:
A thin film passive element includes at least one of a capacitance element having a plurality of conductive layers and a dielectric material layer and an inductance element formed of a patterned conductive layer is stacked on a circuit element-forming region of a semiconductor substrate provided with a plurality of connection pads and is connected to the circuit element of the circuit element-forming region.
摘要:
In a semiconductor device, re-wiring is provided on a circuit element formation region of a semiconductor substrate. A columnar electrode for connection with a circuit board is provided on the rewiring. A first insulating film is provided over the semiconductor substrate excluding a connection pad, and a ground potential layer connected to a ground potential is provided on an upper surface of the first insulating film. A re-wiring is provided over the ground potential layer with a second insulating film interposed. The ground potential layer serves as a barrier layer for preventing crosstalk between the re-wiring and circuit element formation region. A thin-film circuit element is provided on the second insulating film, and a second ground potential layer is provided as a second barrier layer over the thin-film circuit element with an insulating film interposed. Re-wiring is provided over the second ground potential layer.
摘要:
A semiconductor device of a CSP structure is obtained by forming projection electrodes on a plurality of circuit element forming areas of a semiconductor wafer substrate, and then dividing the wafer into chips. Wiring patterns connected to connection pads for signal transmission are provided on the upper surface of an insulating film formed on the circuit element forming areas, and a conductive layer connected to a connection pad connected to a ground potential is provided on the resultant structure except for on the wiring patterns and on areas near the wiring patterns. Further, a thin film circuit element may be provided at the same layer as the conductive layer or below the conductive layer.
摘要:
In a semiconductor device, re-wiring is provided on a circuit element formation region of a semiconductor substrate. A columnar electrode for connection with a circuit board is provided on the rewiring. A first insulating film is provided over the semiconductor substrate excluding a connection pad, and a ground potential layer connected to a ground potential is provided on an upper surface of the first insulating film. A re-wiring is provided over the ground potential layer with a second insulating film interposed. The ground potential layer serves as a barrier layer for preventing crosstalk between the re-wiring and circuit element formation region. A thin-film circuit element is provided on the second insulating film, and a second ground potential layer is provided as a second barrier layer over the thin-film circuit element with an insulating film interposed. Re-wiring is provided over the second ground potential layer.
摘要:
A circuit substrate of a grounding structure of a semiconductor device according to the invention has a plurality of connection pads and a grounding wiring. The semiconductor device has a semiconductor substrate having one side face and the other side face opposite thereto, an insulating film formed thereon, an SOI integrated circuit provided thereon and including a plurality of connection pads, and electrodes for external connection each of which is connected to the corresponding connection pad. The semiconductor device has the external connection electrodes connected to the respective connection pads of the circuit substrate by a face-down bonding scheme. An under-filling material is provided between the semiconductor device and the circuit substrate, and there is provided a connection member which connects the other side face of the semiconductor device with the grounding wiring of the circuit substrate, and is made of a conductive material.
摘要:
A semiconductor device includes a base plate made of a material including at least a thermosetting resin, and having an opening, a vertical conductor filled and provided in the opening of the base plate, at least one semiconductor construct having a semiconductor substrate and a plurality of external connection electrodes provided on one side of the semiconductor substrate, and an insulating layer secured to and provided on a periphery of the semiconductor construct. The insulating layer is secured to the base plate, and the external connection electrodes of the semiconductor construct are bonded to the vertical conductor.
摘要:
A first semiconductor element is mounted on a base plate, and is in a sealed state by the periphery thereof being covered by an insulation member, and the upper surface thereof being covered by an upper insulation film. An upper wiring layer formed on the upper insulation film, and the lower wiring layer formed below the base plate via lower insulation films are connected by conductors. A second semiconductor element is mounted exposed, being connected to the lower wiring layer.
摘要:
A semiconductor device includes a semiconductor construction assembly having a semiconductor substrate which has first and second surfaces, and has an integrated circuit element formed on the first surface, a plurality of connection pads which are connected to the integrated circuit element, a protective layer which covers the semiconductor substrate and has openings for exposing the connection pads, and conductors which are connected to the connection pads, arranged on the protective layer, and have pads. An upper insulating layer covers the entire upper surface of the semiconductor construction assembly including the conductors except the pads. A sealing member covers at least one side surface of the semiconductor construction assembly. An upper conductors is formed on the upper insulating layer, and has one ends electrically connected to the pads and an external connection pads, respectively, an external connection pad of at least one of the upper conductors being disposed in a region corresponding to the sealing member.
摘要:
There is prepared a semiconductor construction in which a plurality of columnar electrodes are provided on an upper side of a semiconductor substrate and in which a sealing film is provided on the semiconductor substrate to cover outer peripheral surfaces of the columnar electrodes. Upper sides of the columnar electrodes are removed to form openings in the sealing film on the supper sides of the columnar electrodes. Adhesive coatings are formed on upper surfaces of the columnar electrodes in the openings of the sealing film, Solder balls are provided on upper surfaces of the adhesive coatings. Finally, the solder balls are deformed by a heat treatment to form solder bumps in and above the openings of the sealing film so that the solder bumps are connected to the upper surfaces of the columnar electrodes. Thus, a semiconductor device is manufactured.
摘要:
A semiconductor device includes a base member made of a material containing at least a thermosetting resin, and at least one semiconductor constructing body mounted on the base member, and having a semiconductor substrate and a plurality of external connecting electrodes formed on the semiconductor substrate. An insulating layer is formed on the base member around the semiconductor constructing body. An interconnection of at least one layer is formed on one sides of the semiconductor constructing body and insulating layer, electrically connected to the external connecting electrode of the semiconductor constructing body, and having a connecting pad portion, the semiconductor substrate is fixed to the base member by fixing force of the base member.