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    ROBUST OUTLET PLUMBING FOR HIGH POWER FLOW REMOTE PLASMA SOURCE
    1.
    发明申请
    ROBUST OUTLET PLUMBING FOR HIGH POWER FLOW REMOTE PLASMA SOURCE 审中-公开
    大功率流量远程等离子体源的稳健出口

    公开(公告)号：US20090283039A1

    公开(公告)日：2009-11-19

    申请号：US12467477

    申请日：2009-05-18

    申请人： JOHN M. WHITE ,  Soo Young Choi ,  Beom Soo Park ,  Gaku Furuta ,  Young Jin Choi ,  Robin L. Tiner

    发明人： JOHN M. WHITE ,  Soo Young Choi ,  Beom Soo Park ,  Gaku Furuta ,  Young Jin Choi ,  Robin L. Tiner

    IPC分类号： C23C16/54 ,  F28D7/00

    CPC分类号： F28D7/00 ,  C23C16/4405 ,  F28D2021/0078 ,  F28F9/26

    摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.

    摘要翻译： 本发明通常包括组件之间的联接。 当点燃离开处理室的等离子体时，反应气体离子可通过许多部件行进到处理室。 反应气体离子可能相当热，并导致各种部件变得非常热，因此，装置部件之间的密封可能失效。 因此，冷却反应气体离子可以通过其移动的任何金属组分可能是有益的。 然而，在冷却的金属组分和陶瓷组分之间的界面处，由于反应气体离子的热量和金属组分的冷却，陶瓷组分可能经历足以破坏陶瓷材料的温度梯度。 因此，将金属部件的凸缘延伸到陶瓷部件中可以减小界面处的温度梯度并减少陶瓷部件的开裂。

    PLASMA PROCESSING APPARATUS AND METHOD
    3.
    发明申请
    PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
    等离子体加工设备和方法

    公开(公告)号：US20090258162A1

    公开(公告)日：2009-10-15

    申请号：US12422183

    申请日：2009-04-10

    申请人： GAKU FURUTA ,  Young-Jin Choi ,  Soo Young Choi ,  Beom Soo Park ,  John M. White ,  Suhail Anwar ,  Robin L. Tiner

    发明人： GAKU FURUTA ,  Young-Jin Choi ,  Soo Young Choi ,  Beom Soo Park ,  John M. White ,  Suhail Anwar ,  Robin L. Tiner

    IPC分类号： C23C16/44 ,  C23C16/00 ,  H05H1/24

    CPC分类号： H01J37/32357 ,  C23C16/4405 ,  C23C16/507 ,  H01J37/3244 ,  H01J2237/3321

    摘要： The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.

    摘要翻译： 本发明通常包括等离子体增强化学气相沉积（PECVD）处理室，其具有在与气源分开的位置处连接到背板的RF功率源。 通过在与RF功率分开的位置处将气体供给到处理室中，可以减少通向处理室的气体管中的寄生等离子体形成。 气体可以在多个位置被供给到腔室。 在每个位置，气体可以通过远程等离子体源以及RF扼流器或RF电阻器从气体源馈送到处理室。

    OFFSET LINER FOR CHAMBER EVACUATION
    4.
    发明申请
    OFFSET LINER FOR CHAMBER EVACUATION 审中-公开
    用于室内休闲的偏心衬里

    公开(公告)号：US20090107955A1

    公开(公告)日：2009-04-30

    申请号：US12205414

    申请日：2008-09-05

    申请人： ROBIN L. TINER ,  Suhail Anwar ,  Gaku Furuta ,  Young Jin Choi ,  Beom Soo Park ,  Soo Young Choi ,  John M. White

    发明人： ROBIN L. TINER ,  Suhail Anwar ,  Gaku Furuta ,  Young Jin Choi ,  Beom Soo Park ,  Soo Young Choi ,  John M. White

    IPC分类号： B44C1/22 ,  C23C16/455 ,  C23C16/44 ,  C23F1/08

    CPC分类号： H01J37/32357 ,  C23C16/4404 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32834

    摘要： The present invention generally includes a chamber liner spaced from a chamber wall to permit processing gases to be pulled between the chamber liner and the chamber wall when withdrawing gases from the processing chamber. When the vacuum pump is below the susceptor, processing gases will be drawn below the susceptor and may lead to undesired deposition onto process chamber components. Additionally, the processing gases will be pulled past the slit valve opening and potentially deposit within the slit valve opening. When material deposits in the slit valve opening, flaking may occur and contaminate the substrates. By drawing the processing gases along the sidewalls other than the one having the slit valve opening therethrough, undesired deposition on the slit valve opening may be reduced.

    摘要翻译： 本发明通常包括与室壁间隔开的腔室衬套，以便当从处理腔室排出气体时允许处理气体在腔室衬套和室壁之间被拉动。 当真空泵在基座下方时，处理气体将被拉到基座下方，并可能导致不希望的沉积到处理室部件上。 此外，处理气体将被拉过狭缝阀开口并可能沉积在狭缝阀开口内。 当材料沉积在狭缝阀开口中时，会发生剥落并污染基板。 通过沿着具有狭缝阀开口的侧壁以外的侧壁吸收处理气体，可以减少狭缝阀开口上的不期望的沉积。

    FLIP EDGE SHADOW FRAME
    6.
    发明申请
    FLIP EDGE SHADOW FRAME 审中-公开
    卷边边框

    公开(公告)号：US20130263782A1

    公开(公告)日：2013-10-10

    申请号：US13569064

    申请日：2012-08-07

    申请人： QUNHUA WANG ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

    发明人： QUNHUA WANG ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

    IPC分类号： C23C16/04

    摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.

    摘要翻译： 本文描述了用于处理衬底的装置。 用于控制基板上的沉积的装置可以包括：腔室，其包括阴影框架支撑件，包括基板支撑表面的基板支撑件，具有包括第一支撑表面的阴影框架主体的阴影框架，与第一表面相对的第二支撑表面， 以及与阴影框体连接的可拆卸唇缘。 可拆卸唇缘可以包括支撑连接，面向基底的第一唇缘表面，与第一唇缘表面相对的第二唇缘表面，位于第一支撑表面上方的第一边缘以及与第一边缘相对的第二边缘以接触基底。

    ANODIZED SHOWERHEAD
    9.
    发明申请
    ANODIZED SHOWERHEAD 有权
    阳光淋浴

    公开(公告)号：US20100288197A1

    公开(公告)日：2010-11-18

    申请号：US12779167

    申请日：2010-05-13

    申请人： Soo Young Choi ,  Suhail Anwar ,  Gaku Furuta ,  Beom Soo Park ,  Robin L. Tiner ,  John M. White ,  Shinichi Kurita

    发明人： Soo Young Choi ,  Suhail Anwar ,  Gaku Furuta ,  Beom Soo Park ,  Robin L. Tiner ,  John M. White ,  Shinichi Kurita

    IPC分类号： C23C16/455 ,  C23C16/00

    CPC分类号： C23C16/45565 ,  C23C16/4404 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32559 ,  H01J37/32577

    摘要： Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of the showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.

    摘要翻译： 本文公开的实施方案通常涉及具有阳极氧化气体分配喷头的装置。 在大面积的平行板RF处理室中，掌握RF返回路径可能具有挑战性。 射频是RF处理室遇到的一个常见问题。 为了减少RF处理室中的电弧，带可以耦合到基座以缩短RF返回路径，陶瓷或绝缘或阳极氧化的阴影框架可以在处理期间耦合到基座，并且阳极化涂层可以沉积在 最靠近室壁的淋浴头。 阳极化涂层可以减少喷头和室壁之间的电弧，并因此增强膜的性质并增加沉积速率。

    SOURCE GAS FLOW PATH CONTROL IN PECVD SYSTEM TO CONTROL A BY-PRODUCT FILM DEPOSITION ON INSIDE CHAMBER
    10.
    发明申请
    SOURCE GAS FLOW PATH CONTROL IN PECVD SYSTEM TO CONTROL A BY-PRODUCT FILM DEPOSITION ON INSIDE CHAMBER 有权
    PECVD系统中的源气体流路控制，用于控制室内副产物膜沉积

    公开(公告)号：US20090064934A1

    公开(公告)日：2009-03-12

    申请号：US12205363

    申请日：2008-09-05

    申请人： BEOM SOO PARK ,  Young Jin Choi ,  Robin L. Tiner ,  Sam H. Kim ,  Soo Young Choi ,  John M. White ,  Dong-Kil Yim

    发明人： BEOM SOO PARK ,  Young Jin Choi ,  Robin L. Tiner ,  Sam H. Kim ,  Soo Young Choi ,  John M. White ,  Dong-Kil Yim

    IPC分类号： C23C16/513

    CPC分类号： C23C16/45502 ,  C23C16/4401

    摘要： The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.

    摘要翻译： 本发明通常包括一种用于将处理气体的流动引导离开室壁和狭缝阀开口的方法和装置。 通过控制处理室内的处理气体的流动路径，可以减少在室壁上和狭缝阀开口内的不期望的沉积。 通过减少狭缝阀开口中的沉积，可能会降低剥落。 通过减少室壁上的沉积，可以增加室清洁之间的时间。 因此，引导处理室内的处理气体的流动可以增加衬底生产量。