DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
    显示基板及其制造方法

    公开(公告)号:US20110169000A1

    公开(公告)日:2011-07-14

    申请号:US12904507

    申请日:2010-10-14

    IPC分类号: H01L33/16 H01L33/00

    摘要: A display substrate includes a first light blocking pattern formed on a base substrate, a first switching element, a second light blocking pattern formed on the base substrate, and a first sensing element. The first light blocking pattern is configured to block visible light and transmit infrared light. The first switching element includes a first semiconductor pattern, a first source electrode, a first drain electrode, and a first gate electrode. The second light blocking pattern is configured to block the visible light and transmit the infrared light. The first sensing element is configured to detect the infrared light, and includes a second semiconductor pattern, a second source electrode, a second drain electrode, and a second gate electrode.

    摘要翻译: 显示基板包括形成在基底基板上的第一遮光图案,第一开关元件,形成在基底基板上的第二遮光图案和第一感测元件。 第一遮光图案被配置为阻挡可见光并透射红外光。 第一开关元件包括第一半导体图案,第一源极电极,第一漏极电极和第一栅极电极。 第二遮光图案被配置为阻挡可见光并透射红外光。 第一感测元件被配置为检测红外光,并且包括第二半导体图案,第二源电极,第二漏电极和第二栅电极。

    Display substrate and method of manufacturing the same
    5.
    发明授权
    Display substrate and method of manufacturing the same 有权
    显示基板及其制造方法

    公开(公告)号:US08581253B2

    公开(公告)日:2013-11-12

    申请号:US12904507

    申请日:2010-10-14

    IPC分类号: H01L29/10 H01L29/04 H01L31/00

    摘要: A display substrate includes a first light blocking pattern formed on a base substrate, a first switching element, a second light blocking pattern formed on the base substrate, and a first sensing element. The first light blocking pattern is configured to block visible light and transmit infrared light. The first switching element includes a first semiconductor pattern, a first source electrode, a first drain electrode, and a first gate electrode. The second light blocking pattern is configured to block the visible light and transmit the infrared light. The first sensing element is configured to detect the infrared light, and includes a second semiconductor pattern, a second source electrode, a second drain electrode, and a second gate electrode.

    摘要翻译: 显示基板包括形成在基底基板上的第一遮光图案,第一开关元件,形成在基底基板上的第二遮光图案和第一感测元件。 第一遮光图案被配置为阻挡可见光并透射红外光。 第一开关元件包括第一半导体图案,第一源极电极,第一漏极电极和第一栅极电极。 第二遮光图案被配置为阻挡可见光并透射红外光。 第一感测元件被配置为检测红外光,并且包括第二半导体图案,第二源电极,第二漏电极和第二栅电极。

    Display device and manufacturing method thereof
    7.
    发明授权
    Display device and manufacturing method thereof 有权
    显示装置及其制造方法

    公开(公告)号:US08174015B2

    公开(公告)日:2012-05-08

    申请号:US12761958

    申请日:2010-04-16

    IPC分类号: H01L29/04

    摘要: A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer. The sensing transistor includes a light blocking film disposed on the upper substrate, a second lower gate electrode contacting the light blocking film on the light blocking film, a second semiconductor layer overlapping the light blocking film on the second lower gate electrode, a second source electrode and a second drain electrode formed on the second semiconductor layer, and a second upper gate electrode overlapping the second semiconductor layer on the second source electrode and the second drain electrode.

    摘要翻译: 显示装置包括:下面板,包括下基板和形成在下基板上的像素晶体管; 以及面向下面板的上面板,并且包括上基板,形成在上基板上的检测晶体管,以及连接到感测晶体管并传输信号的读出晶体管。 读出晶体管包括形成在上基板上的第一下栅极电极,形成在第一下栅电极上并与第一栅电极重叠的第一半导体层,以及设置在第一半导体层上的第一源电极和第一漏电极。 感测晶体管包括设置在上基板上的遮光膜,与遮光膜接触的第二下栅电极,与第二下栅电极上的遮光膜重叠的第二半导体层,第二源电极 以及形成在第二半导体层上的第二漏电极和与第二源电极和第二漏电极上的第二半导体层重叠的第二上栅电极。