公开(公告)号：US07511581B2

公开(公告)日：2009-03-31

申请号：US11634004

申请日：2006-12-05

申请人： Ja Yol Lee ,  Kwi Dong Kim ,  Chong Ki Kwon ,  Jong Dae Kim ,  Sang Heung Lee

发明人： Ja Yol Lee ,  Kwi Dong Kim ,  Chong Ki Kwon ,  Jong Dae Kim ,  Sang Heung Lee

IPC分类号： H03L7/00

CPC分类号： H03K23/667 ,  H03L7/0898 ,  H03L7/093 ,  H03L7/099 ,  H03L7/193

摘要： A wide-band multimode frequency synthesizer using a Phase Locked Loop (PLL) is provided. The multiband frequency synthesizer includes a multimode prescaler, a phase detector/a charge pump, a swallow type frequency divider, and a switching bank LC tuning voltage-controlled oscillator having wide-band and low phase noise characteristics. The multimode prescaler operates in five modes and divides a signal up to 12 GHz. The wide-band frequency synthesizer can be used in various fields such as WLAN/HYPERLAN/DSRC/UWB systems that operate in the frequency range from 2 GHz to 9 GHz. The wide-band multimode frequency synthesizer includes a frequency/phase detector for comparing a frequency and phase of a reference high-frequency signal with a frequency and phase of a feedback high-frequency signal; a charge pump for producing an output current corresponding to the result of the comparison performed by the frequency/phase detector; a loop filter for producing an output voltage corresponding to an accumulated value of the output current of the charge pump; a voltage-controlled oscillator for generating an oscillation signal having a frequency corresponding to the output voltage of the loop filter; and a variable frequency divider for dividing an output signal of the voltage-controlled oscillator by a designated integer value, and outputting the result as a feedback signal, wherein at lease two of an amount of unit pumping charges of the charge pump, an RLC value of the loop filter, an RLC value of the voltage-controlled oscillator, and a divisor value of the variable frequency divider are controlled according to a band.

摘要翻译： 提供了使用锁相环（PLL）的宽带多模频率合成器。 多频率频率合成器包括多模预分频器，相位检测器/电荷泵，燕子式分频器和具有宽带和低相位噪声特性的开关组LC调谐压控振荡器。 多模预分频器以五种模式工作，并将信号分为12 GHz。 宽带频率合成器可用于各种领域，例如在2 GHz至9 GHz频率范围内工作的WLAN / HYPERLAN / DSRC / UWB系统。 宽带多模频率合成器包括用于将参考高频信号的频率和相位与反馈高频信号的频率和相位进行比较的频率/相位检测器; 用于产生与由频率/相位检测器执行的比较结果相对应的输出电流的电荷泵; 环路滤波器，用于产生与电荷泵的输出电流的累积值相对应的输出电压; 用于产生具有与环路滤波器的输出电压对应的频率的振荡信号的压控振荡器; 以及可变分频器，用于将压控振荡器的输出信号除以指定的整数值，并输出该结果作为反馈信号，其中至少两个电荷泵的单位泵送电荷，RLC值 根据频带控制环路滤波器的电压控制振荡器的RLC值和可变分频器的除数值。

公开(公告)号：US07554416B2

公开(公告)日：2009-06-30

申请号：US11542288

申请日：2006-10-02

申请人： Ja Yol Lee ,  Kwi Dong Kim ,  Chong Ki Kwon ,  Jong Dae Kim ,  Sang Heung Lee ,  Kyoung Ik Cho

发明人： Ja Yol Lee ,  Kwi Dong Kim ,  Chong Ki Kwon ,  Jong Dae Kim ,  Sang Heung Lee ,  Kyoung Ik Cho

IPC分类号： H03B7/06 ,  H03C3/22 ,  H03L1/00

CPC分类号： H03B5/1228 ,  H03B5/1215 ,  H03B5/1243 ,  H03B5/1265 ,  H03B5/1271 ,  H03B2201/0208 ,  H03B2201/0266 ,  H03J2200/10

摘要： Provided is an LC resonance voltage-controlled oscillator (VCO) used for a multi-band multi-mode wireless transceiver. In order to generate a multi-band frequency, a capacitor bank and a switchable inductor are included in the LC resonance voltage-controlled oscillator. The LC resonance voltage-controlled oscillator employs an adjustable emitter-degeneration negative resistance cell in place of tail current sources in order to compensate for non-uniform oscillation amplitude caused by the capacitor bank and prevent the degradation of a phase noise due to the tail current sources. The LC resonance voltage-controlled oscillator includes an inductor providing an inductance element partially determining the frequency of an oscillation wave; a discrete capacitor bank providing a capacitance element partially determining the frequency of the oscillation wave and being discretely determined by a control bit signal; and a discrete negative resistance cell providing a negative resistance element that is discretely determined by the control bit signal, to keep the amplitude of the oscillation wave constant.

摘要翻译： 提供了一种用于多频带多模无线收发器的LC谐振压控振荡器（VCO）。 为了产生多频带频率，LC谐振压控振荡器中包括电容器组和可切换电感器。 LC谐振压控振荡器代替尾电流源采用可调发射极 - 退化负电阻电池，以补偿由电容器组引起的不均匀振荡幅度，并防止由于尾电流导致的相位噪声的降低 来源。 LC谐振电压控制振荡器包括：电感器，其提供部分地确定振荡波频率的电感元件; 分立电容器组，提供部分地确定振荡波的频率并由控制位信号离散地确定的电容元件; 以及提供由控制位信号离散地确定的负电阻元件的离散负电阻单元，以保持振荡波的幅度恒定。

公开(公告)号：US20090134944A1

公开(公告)日：2009-05-28

申请号：US12114705

申请日：2008-05-02

申请人： Ja Yol Lee ,  Sang Heung Lee ,  Hae Cheon Kim ,  Hyun Kyu Yu

发明人： Ja Yol Lee ,  Sang Heung Lee ,  Hae Cheon Kim ,  Hyun Kyu Yu

IPC分类号： H03B5/12

CPC分类号： H03B5/1231 ,  H03B5/1212 ,  H03B5/1215 ,  H03B5/1221 ,  H03B5/1253

摘要： A capacitive-degeneration double cross-coupled voltage-controlled oscillator is provided. The capacitive-degeneration double cross-coupled voltage-controlled oscillator includes a main cross-coupled oscillating unit including an oscillation transistor pair cross-coupled to first and second output nodes of a resonating unit to perform an oscillation operation; and an auxiliary cross-coupled oscillating unit including a positive-feedback transistor pair cross-coupled to the first and second output nodes and the transistor pair of the main cross-coupled oscillating unit and a degeneration capacitance connected between emitters of the positive-feedback transistor pair so as to increase a negative resistance of the main cross-coupled oscillating unit. Accordingly, it is possible to increase a maximum attainable oscillation frequency and to decrease an input capacitance.

摘要翻译： 提供电容变性双交叉耦合压控振荡器。 电容变性双交叉电压控制振荡器包括主交叉耦合振荡单元，其包括交叉耦合到谐振单元的第一和第二输出节点的振荡晶体管对，以执行振荡操作; 以及辅助交叉耦合振荡单元，其包括交叉耦合到第一和第二输出节点的正反馈晶体管对和主交叉耦合振荡单元的晶体管对，以及连接在正反馈晶体管的发射极之间的退化电容 以增加主交叉振荡单元的负电阻。 因此，可以增加最大可获得的振荡频率并降低输入电容。

公开(公告)号：US07902930B2

公开(公告)日：2011-03-08

申请号：US11927957

申请日：2007-10-30

申请人： Ja Yol Lee ,  Sang Heung Lee ,  Hyun Kyu Yu

发明人： Ja Yol Lee ,  Sang Heung Lee ,  Hyun Kyu Yu

IPC分类号： H03K3/03

CPC分类号： H03B5/1218 ,  H03B5/1231 ,  H03B2200/0074 ,  H03B2200/0078

摘要： Provided is a colpitts quadrature voltage controlled oscillator capable of obtaining quadrature orthogonal signals using a quadrature combination between a base and a collector of each transistor, without using an additional circuit such as a coupled transistor, a coupled transformer, a multiphase RC filter, etc. Accordingly, since nonlinearity, increased phase noise, a decrease in the Q-factor of an LC resonator, and increased power consumption can be avoided, a colpitts quadrature voltage controlled oscillator that has low phase noise, low electric power consumption, and a compact size can be implemented.

摘要翻译： 提供了一种能够在不使用诸如耦合晶体管，耦合变压器，多相RC滤波器等附加电路的情况下使用每个晶体管的基极和集电极之间的正交组合获得正交正交信号的绞合正交压控振荡器。 因此，由于可以避免非线性，增加的相位噪声，LC谐振器的Q因子的降低和功率消耗的增加，所以抑制相位噪声低，功耗低，尺寸紧凑的正交压控振荡器 可以实现。

公开(公告)号：US20080129392A1

公开(公告)日：2008-06-05

申请号：US11927957

申请日：2007-10-30

申请人： Ja Yol Lee ,  Sang Heung Lee ,  Hyun Kyu Yu

发明人： Ja Yol Lee ,  Sang Heung Lee ,  Hyun Kyu Yu

IPC分类号： H03B27/00 ,  H03B5/12

CPC分类号： H03B5/1218 ,  H03B5/1231 ,  H03B2200/0074 ,  H03B2200/0078

摘要： Provided is a colpitts quadrature voltage controlled oscillator capable of obtaining quadrature orthogonal signals using a quadrature combination between a base and a collector of each transistor, without using an additional circuit such as a coupled transistor, a coupled transformer, a multiphase RC filter, etc. Accordingly, since nonlinearity, increased phase noise, a decrease in the Q-factor of an LC resonator, and increased power consumption can be avoided, a colpitts quadrature voltage controlled oscillator that has low phase noise, low electric power consumption, and a compact size can be implemented.

摘要翻译： 提供了一种能够在不使用诸如耦合晶体管，耦合变压器，多相RC滤波器等附加电路的情况下使用每个晶体管的基极和集电极之间的正交组合获得正交正交信号的绞合正交压控振荡器。 因此，由于可以避免非线性，增加的相位噪声，LC谐振器的Q因子的降低和功率消耗的增加，所以抑制相位噪声低，功耗低，尺寸紧凑的正交压控振荡器 可以实现。

公开(公告)号：US07852165B2

公开(公告)日：2010-12-14

申请号：US12114705

申请日：2008-05-02

申请人： Ja Yol Lee ,  Sang Heung Lee ,  Hae Cheon Kim ,  Hyun Kyu Yu

发明人： Ja Yol Lee ,  Sang Heung Lee ,  Hae Cheon Kim ,  Hyun Kyu Yu

IPC分类号： H03B5/12

CPC分类号： H03B5/1231 ,  H03B5/1212 ,  H03B5/1215 ,  H03B5/1221 ,  H03B5/1253

摘要： A capacitive-degeneration double cross-coupled voltage-controlled oscillator is provided. The capacitive-degeneration double cross-coupled voltage-controlled oscillator includes a main cross-coupled oscillating unit including an oscillation transistor pair cross-coupled to first and second output nodes of a resonating unit to perform an oscillation operation; and an auxiliary cross-coupled oscillating unit including a positive-feedback transistor pair cross-coupled to the first and second output nodes and the transistor pair of the main cross-coupled oscillating unit and a degeneration capacitance connected between emitters of the positive-feedback transistor pair so as to increase a negative resistance of the main cross-coupled oscillating unit. Accordingly, it is possible to increase a maximum attainable oscillation frequency and to decrease an input capacitance.

摘要翻译： 提供电容变性双交叉耦合压控振荡器。 电容变性双交叉电压控制振荡器包括主交叉耦合振荡单元，其包括交叉耦合到谐振单元的第一和第二输出节点的振荡晶体管对，以执行振荡操作; 以及辅助交叉耦合振荡单元，其包括交叉耦合到第一和第二输出节点的正反馈晶体管对和主交叉耦合振荡单元的晶体管对，以及连接在正反馈晶体管的发射极之间的退化电容 以增加主交叉振荡单元的负电阻。 因此，可以增加最大可获得的振荡频率并降低输入电容。

公开(公告)号：US07414488B2

公开(公告)日：2008-08-19

申请号：US11518233

申请日：2006-09-11

申请人： Ja Yol Lee ,  Sang Heung Lee

发明人： Ja Yol Lee ,  Sang Heung Lee

IPC分类号： H03B5/04

CPC分类号： H03B5/1231 ,  H03B5/1212 ,  H03B5/1243 ,  H03B2200/0074

摘要： A differential voltage controlled oscillator (VCO) employed in a frequency synthesizer used as a local oscillator of a wireless communication on-chip transmitter/receiver is provided. More particularly, a differential current negative feedback VCO equipped with a current-current negative feedback circuit that suppresses low- and high-frequency noise is provided.A differential current negative feedback VCO includes a resonator determining oscillation frequency, and an oscillator generating negative resistance. In the oscillator of the differential current negative feedback VCO, transistors Q1 and Q2 form a cross-coupled pair, and negative resistance is generated by positive feedback of the cross-coupled pair. And, transistors Q1 and Q3 together with an emitter resistor and a capacitor form a current negative feedback part, and transistors Q2 and Q4 together with an emitter resistor and a capacitor form another current negative feedback part which is disposed opposite to a resonator. Thus, the VCO operates differentially.In the oscillator of the differential current negative feedback VCO, emitter noise currents generated by base noise voltages of Q1 and Q2 induced by low- and high-frequency noise sources in the bases of Q1 and Q2 are sampled by emitter resistors, amplified through bases of Q3 and Q4, and thus return to the bases of the Q1 and Q2 and suppress the base noise voltages. Measurement of the phase noise of the differential current negative feedback VCO reveals a phase noise reduction of approximately 25 dB compared to a conventional differential VCO.

摘要翻译： 提供了用作无线通信片上发送器/接收器的本地振荡器的频率合成器中使用的差分压控振荡器（VCO）。 更具体地，提供了配备有抑制低频和高频噪声的电流 - 电流负反馈电路的差动电流负反馈VCO。 差分电流负反馈VCO包括确定振荡频率的谐振器和产生负电阻的振荡器。 在差动电流负反馈VCO的振荡器中，晶体管Q 1和Q 2形成交叉耦合对，负电阻由交叉耦合对的正反馈产生。 并且，晶体管Q 1和Q 3与发射极电阻器和电容器一起形成电流负反馈部分，并且晶体管Q 2和Q 4与发射极电阻器和电容器一起形成另一个电流负反馈部分，其与 谐振器。 因此，VCO差分工作。 在差动电流负反馈VCO的振荡器中，由Q 1和Q 2基极引起的低频和高频噪声源引起的基本噪声电压Q 1和Q 2产生的发射极噪声电流由发射极电阻进行采样， 通过Q 3和Q 4的基极放大，从而返回Q 1和Q 2的基极并抑制基极噪声电压。 差分电流负反馈VCO的相位噪声的测量与常规差分VCO相比，相位噪声降低约25 dB。

公开(公告)号：US07170355B2

公开(公告)日：2007-01-30

申请号：US10957749

申请日：2004-10-05

申请人： Ja Yol Lee ,  Sang Heung Lee ,  Jin Yeong Kang ,  Seung Hyeub Oh

发明人： Ja Yol Lee ,  Sang Heung Lee ,  Jin Yeong Kang ,  Seung Hyeub Oh

IPC分类号： H03B1/00

CPC分类号： H03B5/1231 ,  H03B5/1215 ,  H03B5/1221 ,  H03B5/1243

摘要： Provided is a voltage-controlled oscillator (VCO) using a current feedback network for use in a wireless communication terminal. The voltage-controlled oscillator has high input impedance and low output impedance, so that a degree of isolation from the external load is excellent, thereby preventing degradation of the Q-factor by the load in overall oscillation circuit. In the voltage-controlled oscillator of the present invention, an LC resonator is provided to generate positive feedback, and negative resistance may be obtained at a wider frequency range by tuning a varactor of the LC resonator. And a boosting inductor is inserted into the positive feedback loop to have a greater negative resistance, therefore it is possible to prevent a problem in which the oscillation does not occur due to the parasitic resistance components generated during circuit fabrication.

摘要翻译： 提供了一种使用电流反馈网络在无线通信终端中使用的压控振荡器（VCO）。 压控振荡器具有高输入阻抗和低输出阻抗，使得与外部负载的隔离度优异，从而防止整个振荡电路中的负载对Q因子的劣化。 在本发明的压控振荡器中，设置LC谐振器以产生正反馈，并且通过调谐LC谐振器的变容二极管可以在更宽的频率范围内获得负电阻。 并且将增压电感器插入到正反馈回路中以具有更大的负电阻，因此可以防止由于在电路制造期间产生的寄生电阻分量而不发生振荡的问题。

公开(公告)号：US07461235B2

公开(公告)日：2008-12-02

申请号：US11144703

申请日：2005-06-06

申请人： Yil Suk Yang ,  Tae Moon Roh ,  Dae Woo Lee ,  Sang Heung Lee ,  Jong Dae Kim

发明人： Yil Suk Yang ,  Tae Moon Roh ,  Dae Woo Lee ,  Sang Heung Lee ,  Jong Dae Kim

IPC分类号： G06F15/76 ,  G06F1/32

CPC分类号： G06F9/3885 ,  G06F1/32 ,  G06F1/3287 ,  G06F9/30141 ,  G06F9/30156 ,  G06F9/3822 ,  G06F9/3824 ,  Y02D10/171

摘要： Provided is a parallel data path architecture for high energy efficiency. In this architecture, a plurality of parallel process units and a plurality of function units of the process units are controlled by instructions and processed in parallel to improve performance. Also, since only necessary process units and function units are enabled, power dissipation is reduced to enhance energy efficiency. Further, by use of a simple instruction format, hardware can be programmed as the parallel data path architecture for high energy efficiency, which satisfies both excellent performance and low power dissipation, thus elevating hardware flexibility.

摘要翻译： 提供了一种用于高能效的并行数据路径架构。 在该架构中，处理单元的多个并行处理单元和多个功能单元由指令控制并且并行处理以提高性能。 此外，由于只需要必要的处理单元和功能单元，所以功耗降低以提高能量效率。 此外，通过使用简单的指令格式，可以将硬件编程为用于高能量效率的并行数据路径体系结构，其既能满足优异性能又具有低功耗，从而提高硬件灵活性。

公开(公告)号：US07550796B2

公开(公告)日：2009-06-23

申请号：US11947123

申请日：2007-11-29

申请人： Sang Hun Kim ,  Hyun Cheol Bae ,  Sang Heung Lee

发明人： Sang Hun Kim ,  Hyun Cheol Bae ,  Sang Heung Lee

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66613 ,  H01L21/223 ,  H01L21/28079 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66606 ,  H01L29/66742 ,  H01L29/78 ,  H01L29/78684

摘要： A germanium semiconductor device and a method of manufacturing the same are provided. The method includes the steps of: forming an isolation layer on a substrate using a shallow trench; forming a silicon-nitride layer on the substrate, and selectively etching the silicon nitride layer to expose source and drain regions; injecting impurities onto a surface of the substrate over the exposed source and drain regions using delta-doping to form a delta-doping layer; selectively growing a silicon germanium layer containing impurities on the delta-doping layer; rapidly annealing the substrate and forming source and drain regions by diffusion of the impurities; depositing an insulating layer on the entire surface of the substrate; etching the insulating layer and forming source and drain contact parts to be in contact with source and drain terminals; depositing metal over the insulating layer having the source and drain contact parts thereon and forming a metal silicide layer; and after forming the silicide layer, forming the source and drain terminals to be in contact with the silicide layer. Accordingly, the source and drain regions having a shallow junction depth may be ensured by forming the source and drain regions through annealing after delta-doping and selectively growing the silicon germanium layer containing high-concentration impurities. Also, the germanium silicide layer is stably formed by the silicon germanium layer grown in the source and drain regions, and thus contact resistance is lowered and driving current of the device is improved.

摘要翻译： 提供锗半导体器件及其制造方法。 该方法包括以下步骤：使用浅沟槽在衬底上形成隔离层; 在衬底上形成氮化硅层，并选择性地蚀刻氮化硅层以暴露出源区和漏区; 使用增量掺杂在暴露的源极和漏极区域上在衬底的表面上注入杂质以形成δ-掺杂层; 在δ-掺杂层上选择性地生长含有杂质的硅锗层; 快速退火衬底并通过杂质扩散形成源区和漏区; 在基板的整个表面上沉积绝缘层; 蚀刻绝缘层并形成源极和漏极接触部分以与源极和漏极端子接触; 在其上具有源极和漏极接触部分的绝缘层上沉积金属并形成金属硅化物层; 并且在形成硅化物层之后，形成与硅化物层接触的源极和漏极端子。 因此，具有浅结深度的源极和漏极区域可以通过在增量掺杂之后退火形成源区和漏极区域并选择性地生长含有高浓度杂质的硅锗层来确保。 此外，通过在源极区和漏极区中生长的硅锗层稳定地形成硅化锗层，因此接触电阻降低，器件的驱动电流提高。