Rotating substrate support and methods of use
    1.
    发明申请
    Rotating substrate support and methods of use 审中-公开
    旋转基板支撑和使用方法

    公开(公告)号:US20060281310A1

    公开(公告)日:2006-12-14

    申请号:US11147938

    申请日:2005-06-08

    IPC分类号: H01L21/44 C23C16/00

    摘要: A method and apparatus for processing a substrate utilizing a rotating substrate support are disclosed herein. In one embodiment, an apparatus for processing a substrate includes a chamber having a substrate support assembly disposed within the chamber. The substrate support assembly includes a substrate support having a support surface and a heater disposed beneath the support surface. A shaft is coupled to the substrate support and a motor is coupled to the shaft through a rotor to provide rotary movement to the substrate support. A seal block is disposed around the rotor and forms a seal therewith. The seal block has at least one seal and at least one channel disposed along the interface between the seal block and the shaft. A port is coupled to each channel for connecting to a pump. A lift mechanism is coupled to the shaft for raising and lowering the substrate support.

    摘要翻译: 本文公开了一种利用旋转衬底支撑件来处理衬底的方法和装置。 在一个实施例中,用于处理衬底的装置包括具有设置在腔室内的衬底支撑组件的室。 衬底支撑组件包括具有支撑表面的衬底支撑件和设置在支撑表面下方的加热器。 轴联接到基板支撑件,并且电机通过转子联接到轴,以向基板支撑件提供旋转运动。 密封块设置在转子周围并与其形成密封。 密封块具有至少一个密封件和沿密封块和轴之间的界面设置的至少一个通道。 端口连接到每个通道以连接到泵。 升降机构联接到轴上以升高和降低基板支撑。

    Substrate processing apparatus using a batch processing chamber
    3.
    发明申请
    Substrate processing apparatus using a batch processing chamber 审中-公开
    使用批处理室的基板处理装置

    公开(公告)号:US20060156979A1

    公开(公告)日:2006-07-20

    申请号:US11286063

    申请日:2005-11-22

    IPC分类号: H01L21/322 C23C16/00

    摘要: Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput. In one embodiment, a system is configured to perform a substrate processing sequence that contains batch processing chambers only, or batch and single substrate processing chambers, to optimize throughput and minimize processing defects due to exposure to a contaminating environment. In one embodiment, a batch processing chamber is used to increase the system throughput by performing a process recipe step that is disproportionately long compared to other process recipe steps in the substrate processing sequence that are performed on the cluster tool. In another embodiment, two or more batch chambers are used to process multiple substrates using one or more of the disproportionately long processing steps in a processing sequence. Aspects of the invention also include an apparatus and method for delivering a precursor to a processing chamber so that a repeatable ALD or CVD deposition process can be performed.

    摘要翻译: 本发明的方面包括使用适于在一个或多个批次和/或单个基板处理室中处理基板以增加系统吞吐量的多室处理系统(例如,集群工具)来处理基板的方法和装置。 在一个实施例中,系统被配置为执行仅包含批处理室的衬底处理序列,或批处理和单个衬底处理室,以优化生产量并且由于暴露于污染环境而最小化处理缺陷。 在一个实施例中,批处理室用于通过执行与在集群工具上执行的衬底处理序列中的其他工艺配方步骤相比不成比例地长的工艺配方步骤来增加系统吞吐量。 在另一个实施方案中,使用两个或更多个间隔室来处理多个基板,使用处理顺序中的一个或多个不成比例的长处理步骤。 本发明的方面还包括用于将前体输送到处理室的装置和方法,使得可以执行可重复的ALD或CVD沉积工艺。

    Batch Processing Platform For ALD and CVD
    4.
    发明申请
    Batch Processing Platform For ALD and CVD 失效
    用于ALD和CVD的批处理平台

    公开(公告)号:US20070295274A1

    公开(公告)日:2007-12-27

    申请号:US11426563

    申请日:2006-06-26

    IPC分类号: C23C16/00

    摘要: A batch processing platform used for ALD or CVD processing is configured for high throughput and minimal footprint. In one embodiment, the processing platform comprises an atmospheric transfer region, at least one batch processing chamber with a buffer chamber and staging platform, and a transfer robot disposed in the transfer region wherein the transfer robot has at least one substrate transfer arm that comprises multiple substrate handling blades. The platform may include two batch processing chambers configured with a service aisle disposed therebetween to provide necessary service access to the transfer robot and the deposition stations. In another embodiment, the processing platform comprises at least one batch processing chamber, a substrate transfer robot that is adapted to transfer substrates between a FOUP and a processing cassette, and a cassette transfer region containing a cassette handler robot. The cassette handler robot may be a linear actuator or a rotary table.

    摘要翻译: 用于ALD或CVD处理的批处理平台配置为高吞吐量和最小占地面积。 在一个实施例中,处理平台包括大气传送区域,具有缓冲室和分段平台的至少一个批处理室和设置在传送区域中的传送机器人,其中传送机器人具有至少一个基板传送臂,该基板传送臂包括多个 基板处理刀片。 平台可以包括两个批处理室,其配置有设置在其间的服务通道,以提供对传送机器人和沉积站的必要的服务访问。 在另一个实施例中,处理平台包括至少一个批处理室,适于在FOUP和处理盒之间传送基板的基板传送机器人以及包含盒式处理机器人的盒传送区域。 盒式处理机器人可以是线性致动器或旋转台。

    Batch processing platform for ALD and CVD
    5.
    发明授权
    Batch processing platform for ALD and CVD 失效
    ALD和CVD的批处理平台

    公开(公告)号:US07833351B2

    公开(公告)日:2010-11-16

    申请号:US11426563

    申请日:2006-06-26

    IPC分类号: C23F1/00 H01L21/306

    摘要: A batch processing platform used for ALD or CVD processing is configured for high throughput and minimal footprint. In one embodiment, the processing platform comprises an atmospheric transfer region, at least one batch processing chamber with a buffer chamber and staging platform, and a transfer robot disposed in the transfer region wherein the transfer robot has at least one substrate transfer arm that comprises multiple substrate handling blades. The platform may include two batch processing chambers configured with a service aisle disposed therebetween to provide necessary service access to the transfer robot and the deposition stations. In another embodiment, the processing platform comprises at least one batch processing chamber, a substrate transfer robot that is adapted to transfer substrates between a FOUP and a processing cassette, and a cassette transfer region containing a cassette handler robot. The cassette handler robot may be a linear actuator or a rotary table.

    摘要翻译: 用于ALD或CVD处理的批处理平台配置为高吞吐量和最小占地面积。 在一个实施例中,处理平台包括大气传送区域,具有缓冲室和分段平台的至少一个批处理室和设置在传送区域中的传送机器人,其中传送机器人具有至少一个基板传送臂,该基板传送臂包括多个 基板处理刀片。 平台可以包括两个批处理室,其配置有设置在其间的服务通道,以提供对传送机器人和沉积站的必要的服务访问。 在另一个实施例中,处理平台包括至少一个批处理室,适于在FOUP和处理盒之间传送基板的基板传送机器人以及包含盒式处理机器人的盒传送区域。 盒式处理机器人可以是线性致动器或旋转台。

    BATCH PROCESSING PLATFORM FOR ALD AND CVD
    6.
    发明申请
    BATCH PROCESSING PLATFORM FOR ALD AND CVD 审中-公开
    用于ALD和CVD的批处理平台

    公开(公告)号:US20110041764A1

    公开(公告)日:2011-02-24

    申请号:US12939002

    申请日:2010-11-03

    IPC分类号: H01L21/677 C23C16/00

    摘要: A batch processing platform used for ALD or CVD processing is configured for high throughput and minimal footprint. In one embodiment, the processing platform comprises an atmospheric transfer region, at least one batch processing chamber with a buffer chamber and staging platform, and a transfer robot disposed in the transfer region wherein the transfer robot has at least one substrate transfer arm that comprises multiple substrate handling blades. The platform may include two batch processing chambers configured with a service aisle disposed therebetween to provide necessary service access to the transfer robot and the deposition stations. In another embodiment, the processing platform comprises at least one batch processing chamber, a substrate transfer robot that is adapted to transfer substrates between a FOUP and a processing cassette, and a cassette transfer region containing a cassette handler robot. The cassette handler robot may be a linear actuator or a rotary table.

    摘要翻译: 用于ALD或CVD处理的批处理平台配置为高吞吐量和最小占地面积。 在一个实施例中,处理平台包括大气转移区域,至少一个具有缓冲室和分段平台的分批处理室,以及设置在传送区域中的传送机器人,其中传送机器人具有至少一个基板传送臂,其包括多个 基板处理刀片。 平台可以包括两个批处理室,其配置有设置在其间的服务通道,以提供对传送机器人和沉积站的必要的服务访问。 在另一个实施例中,处理平台包括至少一个批处理室,适于在FOUP和处理盒之间传送基板的基板传送机器人以及包含盒式处理机器人的盒传送区域。 盒式处理机器人可以是线性致动器或旋转台。

    Methods and apparatus for processing substrates using model-based control
    7.
    发明授权
    Methods and apparatus for processing substrates using model-based control 有权
    使用基于模型的控制处理基板的方法和装置

    公开(公告)号:US08880210B2

    公开(公告)日:2014-11-04

    申请号:US13183520

    申请日:2011-07-15

    摘要: Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.

    摘要翻译: 本文公开了方法和装置。 在一些实施例中,控制处理室的方法可以包括根据处理参数预先确定处理容积中的压力与排气门的位置之间的关系; 将所述处理室设定为处理容积中具有第一压力的第一状态和所述处理参数的第一值,其中所述排气阀基于所述预定关系设定在第一位置以产生所述第一值的所述第一压力; 当所述处理室改变为具有来自所述第一状态的第二压力和第二过程参数值的第二状态时,确定压力控制曲线以控制所述压力; 以及通过在将处理室改变到第二状态的同时改变排气门的位置来施加压力控制曲线来控制压力。

    DAMAGE ISOLATION BY SHAPED BEAM DELIVERY IN LASER SCRIBING PROCESS
    10.
    发明申请
    DAMAGE ISOLATION BY SHAPED BEAM DELIVERY IN LASER SCRIBING PROCESS 有权
    通过激光扫描过程中的形状光束传递损坏隔离

    公开(公告)号:US20120322240A1

    公开(公告)日:2012-12-20

    申请号:US13161424

    申请日:2011-06-15

    摘要: Methods and apparatuses for dicing substrates by both laser scribing and plasma etching. A method includes laser ablating material layers, the ablating by a laser beam with a centrally peaked spatial power profile to form an ablated trench in the substrate below thin film device layers which is positively sloped. In an embodiment, a femtosecond laser forms a positively sloped ablation profile which facilitates vertically-oriented propagation of microcracks in the substrate at the ablated trench bottom. With minimal lateral runout of microcracks, a subsequent anisotropic plasma etch removes the microcracks for a cleanly singulated chip with good reliability.

    摘要翻译: 通过激光划线和等离子体蚀刻对基板进行切割的方法和装置。 一种方法包括激光烧蚀材料层,用具有中心峰值空间功率分布的激光束进行烧蚀,以在正向倾斜的薄膜器件层下面的衬底中形成消融沟槽。 在一个实施例中,飞秒激光形成正倾斜的消融轮廓,其有利于在烧蚀的沟槽底部处的衬底中的微裂纹的垂直取向传播。 随着微裂纹的侧向跳动最小,随后的各向异性等离子体蚀刻可以清除具有良好可靠性的干净分割芯片的微裂纹。