公开(公告)号：US08743307B2

公开(公告)日：2014-06-03

申请号：US13490978

申请日：2012-06-07

申请人： Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn ,  Sei-Yong Park ,  Jun Hyun Park ,  Gun Hee Kim ,  Ji Hun Lim ,  Kyoung Won Lee ,  Toshihiro Kugimiya ,  Aya Miki ,  Shinya Morita ,  Tomoya Kishi ,  Hiroaki Tao ,  Hiroshi Goto

发明人： Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn ,  Sei-Yong Park ,  Jun Hyun Park ,  Gun Hee Kim ,  Ji Hun Lim ,  Kyoung Won Lee ,  Toshihiro Kugimiya ,  Aya Miki ,  Shinya Morita ,  Tomoya Kishi ,  Hiroaki Tao ,  Hiroshi Goto

IPC分类号： G02F1/136

CPC分类号： H01L27/1225 ,  H01L29/7869

摘要： A display device includes a first substrate, a gate line disposed on the first substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and connected to a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode and a passivation layer disposed on the data line, in which the semiconductor layer is formed of an oxide semiconductor including indium, tin, and zinc. The indium is present in an amount of about 5 atomic percent (at %) to about 50 at %, and a ratio of the zinc to the tin is about 1.38 to about 3.88.

摘要翻译： 显示装置包括：第一基板，设置在第一基板上的栅极线，包括栅电极，设置在栅极线上的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线 并连接到源电极，设置在半导体层上并面对源电极的漏电极和设置在数据线上的钝化层，其中半导体层由包含铟，锡和锌的氧化物半导体形成。 铟以约5原子％（at％）至约50原子％的量存在，并且锌与锡的比例为约1.38至约3.88。

公开(公告)号：US09190523B2

公开(公告)日：2015-11-17

申请号：US13554393

申请日：2012-07-20

申请人： Byung Du Ahn ,  Je Hun Lee ,  Sei-Yong Park ,  Jun Hyun Park ,  Gun Hee Kim ,  Ji Hun Lim ,  Jae Woo Park ,  Jin Seong Park ,  Toshihiro Kugimiya ,  Aya Miki ,  Shinya Morita ,  Tomoya Kishi ,  Hiroaki Tao

发明人： Byung Du Ahn ,  Je Hun Lee ,  Sei-Yong Park ,  Jun Hyun Park ,  Gun Hee Kim ,  Ji Hun Lim ,  Jae Woo Park ,  Jin Seong Park ,  Toshihiro Kugimiya ,  Aya Miki ,  Shinya Morita ,  Tomoya Kishi ,  Hiroaki Tao

IPC分类号： H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L27/12

CPC分类号： H01L29/7869 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66969

摘要： An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3.

摘要翻译： 氧化物半导体包括包含选自锌（Zn）和锡（Sn）中的至少一种的第一材料和第二材料，其中通过减去第二材料和氧之间的电负性差值获得的值（O ）从第一材料和氧（O）之间的电负性差值小于约1.3。

公开(公告)号：US09070777B2

公开(公告)日：2015-06-30

申请号：US13543235

申请日：2012-07-06

申请人： Gun Hee Kim ,  Jae Woo Park ,  Jin Hyun Park ,  Byung Du Ahn ,  Je Hun Lee ,  Yeon Hong Kim ,  Jung Hwa Kim ,  Sei-Yong Park ,  Jun Hyun Park ,  Kyoung Won Lee ,  Ji Hun Lim

发明人： Gun Hee Kim ,  Jae Woo Park ,  Jin Hyun Park ,  Byung Du Ahn ,  Je Hun Lee ,  Yeon Hong Kim ,  Jung Hwa Kim ,  Sei-Yong Park ,  Jun Hyun Park ,  Kyoung Won Lee ,  Ji Hun Lim

IPC分类号： H01L29/12 ,  H01L21/00 ,  H01L29/786 ,  H01L21/02

CPC分类号： H01L29/7869 ,  H01L21/02554

摘要： A semiconductor device includes: a substrate, a semiconductor layer including an oxide semiconductor disposed on the substrate, a barrier layer disposed on the semiconductor layer and an insulating layer disposed on the barrier layer. The semiconductor layer includes an oxide semiconductor, and the barrier layer includes a material having a lower standard electrode potential than a semiconductor material of the oxide semiconductor, a lower electron affinity than the semiconductor material of the oxide semiconductor, or a larger band gap than the semiconductor material of the oxide semiconductor. The insulating layer includes at least one of a silicon-based oxide or a silicon-based nitride, and the insulating layer includes a portion which contacts with an upper surface of the barrier layer.

摘要翻译： 半导体器件包括：衬底，包括设置在衬底上的氧化物半导体的半导体层，设置在半导体层上的阻挡层和设置在阻挡层上的绝缘层。 半导体层包括氧化物半导体，并且阻挡层包括具有比氧化物半导体的半导体材料低的标准电极电位的材料，比氧化物半导体的半导体材料低的电子亲和力或比 氧化物半导体的半导体材料。 绝缘层包括硅基氧化物或硅基氮化物中的至少一种，并且绝缘层包括与阻挡层的上表面接触的部分。

公开(公告)号：US20130114013A1

公开(公告)日：2013-05-09

申请号：US13490978

申请日：2012-06-07

申请人： Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn ,  Sei-Yong Park ,  Jun Hyun Park ,  Gun Hee Kim ,  Ji Hun Lim ,  Kyoung Won Lee

发明人： Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn ,  Sei-Yong Park ,  Jun Hyun Park ,  Gun Hee Kim ,  Ji Hun Lim ,  Kyoung Won Lee

IPC分类号： H01L33/08 ,  G02F1/136

CPC分类号： H01L27/1225 ,  H01L29/7869

摘要： A display device includes a first substrate, a gate line disposed on the first substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and connected to a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode and a passivation layer disposed on the data line, in which the semiconductor layer is formed of an oxide semiconductor including indium, tin, and zinc. The indium is present in an amount of about 5 atomic percent (at %) to about 50 at % , and a ratio of the zinc to the tin is about 1.38 to about 3.88.

摘要翻译： 显示装置包括：第一基板，设置在第一基板上的栅极线，包括栅电极，设置在栅极线上的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线 并连接到源电极，设置在半导体层上并面对源电极的漏电极和设置在数据线上的钝化层，其中半导体层由包含铟，锡和锌的氧化物半导体形成。 铟以约5原子％（at％）至约50原子％的量存在，并且锌与锡的比例为约1.38至约3.88。

公开(公告)号：US08686426B2

公开(公告)日：2014-04-01

申请号：US13555889

申请日：2012-07-23

申请人： Byung Du Ahn ,  Ji Hun Lim ,  Gun Hee Kim ,  Kyoung Won Lee ,  Je Hun Lee

发明人： Byung Du Ahn ,  Ji Hun Lim ,  Gun Hee Kim ,  Kyoung Won Lee ,  Je Hun Lee

IPC分类号： H01L27/14

CPC分类号： H01L29/7869 ,  H01L29/78696

摘要： A plural semiconductive oxides TFT (sos-TFT) provides improved electrical functionality in terms of charge-carrier mobility and/or threshold voltage variability. The sos-TFT may be used to form a thin film transistor array panel for display devices. An example sos-TFT includes: an insulated gate electrode; a first semiconductive oxide layer having a composition including a first semiconductive oxide; and a second semiconductive oxide layer having a different composition that also includes a semiconductive oxide. The first and second semiconductive oxide layers have respective channel regions that are capacitively influenced by a control voltage applied to the gate electrode. In one embodiment, the second semiconductive oxide layer includes at least one additional element that is not included in the first semiconductive oxide layer where the additional element is one of gallium (Ga), silicon (Si), niobium (Nb), hafnium (Hf), and germanium (Ge).

摘要翻译： 多个半导体氧化物TFT（sos-TFT）在电荷载流子迁移率和/或阈值电压变化性方面提供改进的电功能。 sos-TFT可以用于形成用于显示装置的薄膜晶体管阵列面板。 示例sos-TFT包括：绝缘栅电极; 具有包含第一半导体氧化物的组成的第一半导体氧化物层; 以及具有不同组成的第二半导体氧化物层，其还包括半导体氧化物。 第一和第二半导体氧化物层具有由施加到栅电极的控制电压的电容性影响的各个沟道区。 在一个实施例中，第二半导体氧化物层包括至少一个附加元件，其不包括在第一半导体氧化物层中，其中附加元素是镓（Ga），硅（Si），铌（Nb），铪（Hf ）和锗（Ge）。