公开(公告)号：US06905543B1

公开(公告)日：2005-06-14

申请号：US10174628

申请日：2002-06-19

申请人： James A. Fair ,  Nerissa Taylor ,  Junghwan Sung

发明人： James A. Fair ,  Nerissa Taylor ,  Junghwan Sung

IPC分类号： C23C16/02 ,  C23C16/14 ,  C23C16/455 ,  C30B25/14

CPC分类号： C23C16/14 ,  C23C16/0218 ,  C23C16/45525

摘要： The nucleation delay in the formation of a tungsten layer on a substrate is reduced or eliminated by alternative processes. In one process the substrate is exposed to atomic hydrogen before the tungsten nucleation layer is formed. In the other process the substrate is exposed to a boron hydride such as diborane (B2H6) before the nucleation layer is formed. The process works effectively to reduce or eliminate the tungsten nucleation delay on a variety of surfaces, including silicon, silicon dioxide, silicon nitride and titanium nitride.

摘要翻译： 通过替代方法减少或消除了在基底上形成钨层的成核延迟。 在一个过程中，在形成钨成核层之前，将衬底暴露于原子氢。 在另一方法中，在形成成核层之前，将基底暴露于硼氢化物如乙硼烷（B 2 H 6 H 6）。 该工艺有效地减少或消除了各种表面上的钨成核延迟，包括硅，二氧化硅，氮化硅和氮化钛。

公开(公告)号：US07144806B1

公开(公告)日：2006-12-05

申请号：US10279147

申请日：2002-10-23

申请人： James A. Fair ,  Jungwan Sung ,  Nerissa Taylor

发明人： James A. Fair ,  Jungwan Sung ,  Nerissa Taylor

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/8242

CPC分类号： H01L21/76843 ,  C23C16/14 ,  C23C16/38 ,  C23C16/42 ,  C23C16/45542 ,  H01L21/28562

摘要： An ALD method deposits conformal tantalum-containing material layers on small features of a substrate surface. The method includes the following principal operations: depositing a thin conformal and saturated layer of tantalum-containing precursor over some or all of the substrate surface; using an inert gas or hydrogen plasma to purge the halogen byproducts and unused reactants; reducing the precursor to convert it to a conformal layer of tantalum or tantalum-containing material; using another purge of inert gas or hydrogen plasma to remove the halogen byproducts and unused reactants; and repeating the deposition/reduction cycles until a desired tantalum-containing material layer is achieved. An optional step of treating each newly formed surface of tantalum containing material with a nitrogen-containing agent can be added to create varying amounts of tantalum nitride.

摘要翻译： ALD方法在基底表面的小特征上沉积保形的含钽材料层。 该方法包括以下主要操作：在一些或全部基板表面上沉积薄的共形和饱和的含钽前体层; 使用惰性气体或氢气等离子体清洗卤素副产物和未使用的反应物; 减少前体以将其转变成钽或含钽材料的保形层; 使用惰性气体或氢等离子体的另一吹扫来除去卤素副产物和未使用的反应物; 并重复沉积/还原循环，直到达到所需的含钽材料层。 可以加入用含氮试剂处理含有钽的材料的每个新形成的表面的可选步骤，以产生不同量的氮化钽。

公开(公告)号：US06844258B1

公开(公告)日：2005-01-18

申请号：US10435010

申请日：2003-05-09

申请人： James A. Fair ,  Robert H. Havemann ,  Jungwan Sung ,  Nerissa Taylor ,  Sang-Hyeob Lee ,  Mary Anne Plano

发明人： James A. Fair ,  Robert H. Havemann ,  Jungwan Sung ,  Nerissa Taylor ,  Sang-Hyeob Lee ,  Mary Anne Plano

IPC分类号： H01L21/285 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/76856 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76889

摘要： A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of the refractory metal layer to form a refractory metal nitride. Methods to reduce and clean the copper lines before refractory metal deposition are also described. Methods to form a thicker refractory metal layer using bulk deposition are also described.

摘要翻译： 描述了一种用于制造有效减少铜电迁移和铜扩散的难熔金属和难熔金属氮化物盖的方法。 该方法包括沉积难熔金属成核层并至少氮化至难熔金属层的上部以形成难熔金属氮化物。 还描述了在难熔金属沉积之前减少和清洁铜线的方法。 还描述了使用体积沉积形成较厚难熔金属层的方法。

公开(公告)号：US07897215B1

公开(公告)日：2011-03-01

申请号：US10465721

申请日：2003-06-18

申请人： James A. Fair ,  Nerissa Taylor

发明人： James A. Fair ,  Nerissa Taylor

IPC分类号： B05D3/06

CPC分类号： C23C16/45525 ,  C23C16/45536 ,  C23C16/482 ,  C23C16/486 ,  C23C16/487

摘要： Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.

摘要翻译： 公开了离子诱导的，UV诱导的和电子诱导的顺序化学气相沉积（CVD）工艺，其中分别使用离子通量，紫外线辐射或电子通量来诱导化学反应 的过程。 将薄膜沉积在衬底上的过程包括将气相中的第一反应气体的流引入到处理室中，其中气体在衬底上形成吸附的饱和层，并将衬底暴露于离子通量， 紫外线辐射或用于引起第一反应气体的吸附层的化学反应形成薄膜的电子束。 可以使用第二反应气体来形成复合薄膜。 可以重复本发明的离子诱导的，UV诱导的和电子诱导的顺序CVD方法以形成所需厚度的薄膜。

公开(公告)号：US07157798B1

公开(公告)日：2007-01-02

申请号：US10984126

申请日：2004-11-08

申请人： James A. Fair ,  Robert H. Havemann ,  Jungwan Sung ,  Nerissa Taylor ,  Sang-Hyeob Lee ,  Mary Anne Plano

发明人： James A. Fair ,  Robert H. Havemann ,  Jungwan Sung ,  Nerissa Taylor ,  Sang-Hyeob Lee ,  Mary Anne Plano

IPC分类号： H01L23/48

CPC分类号： H01L21/76856 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76889

摘要： A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of the refractory metal layer to form a refractory metal nitride. Methods to reduce and clean the copper lines before refractory metal deposition are also described. Methods to form a thicker refractory metal layer using bulk deposition are also described.

摘要翻译： 描述了一种用于制造有效减少铜电迁移和铜扩散的难熔金属和难熔金属氮化物盖的方法。 该方法包括沉积难熔金属成核层并至少氮化至难熔金属层的上部以形成难熔金属氮化物。 还描述了在难熔金属沉积之前减少和清洁铜线的方法。 还描述了使用体积沉积形成较厚难熔金属层的方法。

公开(公告)号：US06720260B1

公开(公告)日：2004-04-13

申请号：US10600622

申请日：2003-06-20

申请人： James A. Fair ,  Nerissa Taylor

发明人： James A. Fair ,  Nerissa Taylor

IPC分类号： C23C16452

CPC分类号： C23C16/45525 ,  C23C16/45536 ,  C23C16/482 ,  C23C16/486 ,  C23C16/487

摘要： Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.

摘要翻译： 公开了离子诱导的，UV诱导的和电子诱导的顺序化学气相沉积（CVD）工艺，其中分别使用离子通量，紫外线辐射或电子通量来诱导化学反应 的过程。 将薄膜沉积在衬底上的过程包括将气相中的第一反应气体的流引入到处理室中，其中气体在衬底上形成吸附的饱和层，并将衬底暴露于离子通量， 紫外线辐射或用于引起第一反应气体的吸附层的化学反应形成薄膜的电子束。 可以使用第二反应气体来形成复合薄膜。 可以重复本发明的离子诱导的，UV诱导的和电子诱导的顺序CVD方法以形成所需厚度的薄膜。

公开(公告)号：US06627268B1

公开(公告)日：2003-09-30

申请号：US09849075

申请日：2001-05-03

申请人： James A. Fair ,  Wilbert van den Hoek ,  Nerissa Taylor

发明人： James A. Fair ,  Wilbert van den Hoek ,  Nerissa Taylor

IPC分类号： C23C16452

CPC分类号： C23C16/45525 ,  C23C16/45536 ,  C23C16/482 ,  C23C16/486 ,  C23C16/487

摘要： Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.

摘要翻译： 公开了离子诱导的，UV诱导的和电子诱导的顺序化学气相沉积（CVD）工艺，其中分别使用离子通量，紫外线辐射或电子通量来诱导化学反应 的过程。 将薄膜沉积在衬底上的过程包括将气相中的第一反应气体的流引入到处理室中，其中气体在衬底上形成吸附的饱和层，并将衬底暴露于离子通量， 紫外线辐射或用于引起第一反应气体的吸附层的化学反应形成薄膜的电子束。 可以使用第二反应气体来形成复合薄膜。 可以重复本发明的离子诱导的，UV诱导的和电子诱导的顺序CVD方法以形成所需厚度的薄膜。

公开(公告)号：US20120247674A1

公开(公告)日：2012-10-04

申请号：US13493655

申请日：2012-06-11

申请人： James A. Fair ,  Vincent Decaux ,  Anirban Guha ,  David Cheung ,  John Keller ,  Peter Jagusch

发明人： James A. Fair ,  Vincent Decaux ,  Anirban Guha ,  David Cheung ,  John Keller ,  Peter Jagusch

IPC分类号： C23F1/08

CPC分类号： H01J37/32449 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32633 ,  H01J37/32651 ,  H01J2237/335

摘要： Embodiments of a plasma generator apparatus for ashing a work piece are provided. The apparatus includes a container adapted for continuous gas flow there through from an inlet end to an outlet end thereof. The container is fabricated of a dielectric material and adapted for ionization therein of a portion of at least one component of gas flowing therethrough. A gas flow distributor is configured to direct gas flow to a region within the container and a coil surrounds at least a portion of side walls of the container adjacent the region of the container to which the gas flow distributor directs gas flow. A radio frequency generator is coupled to the coil.

摘要翻译： 提供了用于灰化工件的等离子体发生器装置的实施例。 该装置包括适于在其中从其入口端到其出口端的连续气体流动的容器。 容器由电介质材料制成并且适于其中流过其中的至少一种气体成分的一部分进行电离。 气流分配器构造成将气流引导到容器内的区域，并且线圈围绕容器的与气流分配器引导气体流动的区域相邻的容器侧壁的至少一部分。 射频发生器耦合到线圈。

公开(公告)号：US06464779B1

公开(公告)日：2002-10-15

申请号：US09766143

申请日：2001-01-19

申请人： Ronald A. Powell ,  James A. Fair

发明人： Ronald A. Powell ,  James A. Fair

IPC分类号： C30B2902

CPC分类号： C23C16/45525 ,  C23C16/18 ,  C23C16/56 ,  C30B25/02 ,  C30B29/02

摘要： This invention pertains to systems and methods for atomic layer chemical vapor deposition. More specifically, the invention pertains to methods for copper atomic layer chemical vapor deposition, particularly to deposit a seed layer prior to the electrochemical Cu fill operation in integrated circuit fabrication. It also pertains to apparatus modules for performing such deposition.

摘要翻译： 本发明涉及原子层化学气相沉积的系统和方法。 更具体地，本发明涉及铜原子层化学气相沉积的方法，特别是在集成电路制造中的电化学Cu填充操作之前沉积种子层。 它也涉及用于进行这种沉积的装置模块。

公开(公告)号：US4920908A

公开(公告)日：1990-05-01

申请号：US323199

申请日：1989-03-13

申请人： Daniel L. Brors ,  James A. Fair ,  Kenneth A. Monnig

发明人： Daniel L. Brors ,  James A. Fair ,  Kenneth A. Monnig

IPC分类号： C23C16/42 ,  C23C16/44 ,  C23C16/458

CPC分类号： C23C16/4412 ,  C23C16/42 ,  C23C16/4588

摘要： An apparatus is provided for obtaining very high quality films by chemical vapor deposition in situations where the deposition is mass transport limited. In accordance with the preferred embodiments, there is provided a vacuum housing which is actively cooled to a temperature below which deposition occurs, while at the same time the wafers are being heated to cause deposition at the wafer surfaces. Also provided are mixing chamber systems to ensure that reactant gases are well mixed and distributed evenly over each wafer surface. Mass transport control is further enhanced by providing an exhaust manifold which scavenges reactant gases from locations distributed throughout the system to achieve an even exhaust. Also provided is a method for depositing silicon-rich tungsten silicides using the above apparatus.

摘要翻译： 提供了一种用于通过化学气相沉积获得非常高质量的膜的装置，其中沉积是质量传输受限的。 根据优选实施例，提供了一种真空壳体，其被主动冷却到低于该温度发生的温度，同时晶片被加热以在晶片表面上沉积。 还提供了混合室系统，以确保反应气体在每个晶片表面上均匀地均匀分布。 通过提供排气歧管进一步增强了质量传输控制，排气歧管从分布在整个系统中的位置清除反应气体，以实现均匀的排气。 还提供了使用上述装置沉积富硅的硅化钨的方法。