利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

20 条记录 (耗时 0.03 秒)

    FLIP FERAM CELL AND METHOD TO FORM SAME
    1.
    发明申请
    FLIP FERAM CELL AND METHOD TO FORM SAME 有权
    翻转毛细胞及其形成方法

    公开(公告)号：US20070164337A1

    公开(公告)日：2007-07-19

    申请号：US11687000

    申请日：2007-03-16

    申请人： James Adkisson ,  Charles Black ,  Alfred Grill ,  Randy Mann ,  Deborah Neumayer ,  Wilbur Pricer ,  Katherine Saenger ,  Thomas Shaw

    发明人： James Adkisson ,  Charles Black ,  Alfred Grill ,  Randy Mann ,  Deborah Neumayer ,  Wilbur Pricer ,  Katherine Saenger ,  Thomas Shaw

    IPC分类号： H01L29/94

    CPC分类号： H01L28/55 ,  H01L27/0629 ,  H01L27/11502 ,  H01L27/11507 ,  Y10S438/977

    摘要： A method of forming an integrated ferroelectric/CMOS structure which effectively separates incompatible high temperature deposition and annealing processes is provided. The method of the present invention includes separately forming a CMOS structure and a ferroelectric delivery wafer. These separate structures are then brought into contact with each and the ferroelectric film of the delivery wafer is bonded to the upper conductive electrode layer of the CMOS structure by using a low temperature anneal step. A portion of the delivery wafer is then removed providing an integrated FE/CMOS structure wherein the ferroelectric capacitor is formed on top of the CMOS structure. The capacitor is in contact with the transistor of the CMOS structure through all the wiring levels of the CMOS structure.

    摘要翻译： 提供了一种形成集成的铁电/ CMOS结构的方法，其有效地分离不兼容的高温沉积和退火工艺。 本发明的方法包括分别形成CMOS结构和铁电输送晶片。 然后使这些分离的结构与每个结构接触，并且通过使用低温退火步骤将输送晶片的铁电体膜结合到CMOS结构的上导电电极层。 然后去除输送晶片的一部分，提供集成的FE / CMOS结构，其中铁电电容器形成在CMOS结构的顶部。 电容器通过CMOS结构的所有布线级与CMOS结构的晶体管接触。

    Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
    5.
    发明申请
    Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality 失效
    使用含有SiCOH基质官能团和有机致孔剂功能的单一双功能前体的超低k等离子体增强化学气相沉积方法

    公开(公告)号：US20060079099A1

    公开(公告)日：2006-04-13

    申请号：US10964254

    申请日：2004-10-13

    申请人： Son Nguyen ,  Stephen Gates ,  Deborah Neumayer ,  Alfred Grill

    发明人： Son Nguyen ,  Stephen Gates ,  Deborah Neumayer ,  Alfred Grill

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/31695 ,  Y10T428/249921

    摘要： A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH4) derivatives having the molecular formula SiRR1R2R3, disiloxane derivatives having the molecular formula R4R5R6—Si—O—Si—R7R8R9, and trisiloxane derivatives having the molecular formula R10R11R12—Si—O—Si—R13R14—O—Si—R15R16R17 where R and R1-17 may or may not be identical and are selected from H, alkyl, alkoxy, epoxy, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents. In addition to the method, the present application also provides SiCOH dielectrics made from the inventive method as well as electronic structures that contain the same.

    摘要翻译： 提供了由具有内置有机致孔剂的单一有机硅前体制备包含Si，C，O和H原子的SiCOH电介质材料的方法。 具有内置有机致孔剂的单一有机硅前体选自具有分子式SiRR 1 R 2 R 2的硅烷（SiH 4 S 4）衍生物 3，具有分子式R 4的二硅氧烷衍生物R 5 S 6 -Si-O-Si-R 具有分子式R 10 R 11的三硅氧烷衍生物，其中R 1，R 2，R 3，R 3，R 4， SUP> R 12 -Si-O-Si-R 13 R 14 -O-Si-R 15 其中R和R 1-17可以相同也可以不相同，并且选自H，烷基，烷氧基，环氧基， 苯基，乙烯基，烯丙基，烯基或炔基，其可以是直链，支链，环状，多环并且可以被含氧，含氮或含氟的取代基官能化。 除了该方法之外，本申请还提供了由本发明方法制备的SiCOH电介质以及含有该SiCOH的电子结构。

    SiCOH film preparation using precursors with built-in porogen functionality
    10.
    发明申请
    SiCOH film preparation using precursors with built-in porogen functionality 有权
    使用具有内置致孔剂功能的前体的SiCOH膜制备

    公开(公告)号：US20070161256A1

    公开(公告)日：2007-07-12

    申请号：US11329560

    申请日：2006-01-11

    申请人： Stephen Gates ,  Alfred Grill ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

    发明人： Stephen Gates ,  Alfred Grill ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

    IPC分类号： H01L21/31

    CPC分类号： H01L21/31695 ,  B05D1/60 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351

    摘要： A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant.

    摘要翻译： 描述了使用至少一种有机硅前体制造具有超低介电常数（或超低k）的介电材料的方法。 本发明中使用的有机硅前体包括含有Si-O结构和牺牲有机基团的分子作为离去基团。 使用含有分子尺度牺牲离去基团的有机硅前体使得能够控制纳米尺度的孔径，控制组成和结构均匀性并简化制造过程。 此外，从单一前体制造电介质膜能够更好地控制膜中的最终孔隙率和较窄的孔径分布，导致在相同的介电常数值下更好的机械性能。