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公开(公告)号:US20050104208A1
公开(公告)日:2005-05-19
申请号:US10707021
申请日:2003-11-14
申请人: James Bartelo , Tien-Jen Cheng , David Eichstadt , Charles Goldsmith , Jonathan Griffith , Donald Henderson , Roger Quon , Stephen Kilpatrick
发明人: James Bartelo , Tien-Jen Cheng , David Eichstadt , Charles Goldsmith , Jonathan Griffith , Donald Henderson , Roger Quon , Stephen Kilpatrick
IPC分类号: H01L23/485 , H01L23/48
CPC分类号: H01L24/10 , H01L24/13 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05181 , H01L2224/05647 , H01L2224/13 , H01L2224/13099 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/04953 , H01L2924/14 , H01L2924/00 , H01L2924/00014 , H01L2924/013
摘要: Disclosed is an improved integrated circuit structure that has internal circuitry and interconnects (e.g. C4, etc.) on an external portion of the structure. With the invention, these interconnects have a metal layer on the external portion of the structure, a first copper layer on the metal layer, a barrier layer on the copper layer, a stabilizing copper layer on the barrier layer, and a tin-based solder bump on the barrier layer. The stabilizing copper layer has a sufficient amount of copper to balance the chemical potential gradient of copper across the barrier layer and prevent copper within the first copper layer from diffusing across the barrier layer. Alternatively, a sufficient amount of copper can be included within the tin-based solder bump to prevent copper from diffusing across the barrier layer. Thus, the tin-based solder bump comprises a copper rich solder alloy.
摘要翻译: 公开了一种改进的集成电路结构,其在该结构的外部部分上具有内部电路和互连(例如C4等)。 通过本发明,这些互连在结构的外部具有金属层,金属层上的第一铜层,铜层上的阻挡层,阻挡层上的稳定铜层和锡基焊料 在阻挡层上碰撞。 稳定铜层具有足够量的铜以平衡横跨阻挡层的铜的化学势梯度,并防止第一铜层内的铜扩散穿过势垒层。 或者,可以在锡基焊料凸块内包含足够量的铜,以防止铜在阻挡层上扩散。 因此,锡基焊料凸块包括富含铜的焊料合金。